MRF8P9040NR1 vs MRF8S9220HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P9040NR1 sa pamamagitan ng NXP Semiconductors at MRF8S9220HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ NakahandaNXP Semiconductors
MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
MRF8S9220HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8P9040NR1 | MRF8S9220HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors | — |
| Uri ng Transistor | N-Channel Lateral MOSFET (RF Power) | — |
| Technology | HV8 Lateral N-Channel Enhancement-Mode | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Operating Frequency Range | 728 MHz to 960 MHz | — |
| Drain-Source Voltage (Vdss) Max | 70 V | — |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) | — |
| Test Drain Supply Voltage | 28 V | — |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) | — |
| Power Gain (Gps) at 960 MHz | 19.1 dB | — |
| Packhaging | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) | — |
| Uri ng Pagpapasok | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Bilang ng Pin | 4 (Drain on flange) | — |
| Modulation Formats Supported | CDMA, W-CDMA, LTE | — |
| PA Topology Suitability | Class AB, Class C | — |
| Level ng MSL | 3 | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | Yes (per typical NXP HV8 family) | — |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Packhaging / Kaso | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Temperature ng Junction na Operasyon | — | -65 C to +225 C |
| Lead-Free / RoHS | — | Lead Free (per DigChip listing) |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |