MRF8S21200HSR6 vs MRF8S21200HR6 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8S21200HSR6 sa pamamagitan ng NXP Semiconductors at MRF8S21200HR6 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP
MRF8S21200HSR6 ✓ NakahandaNXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8S21200HSR6 | MRF8S21200HR6 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Output Power (Avg, W-CDMA/LTE) | 48 W at 28 V | — |
| Power Gain | 18.1 dB | 18.1 dB |
| Test Voltage | 28 V | 28 V |
| Test Current (Quiescent) | 1.4 A | — |
| Minimum Breakdown Voltage (Drain-Source) | 65 V | — |
| Maximum Junction Temperature | 225 C | — |
| Mounting Configuration | Surface Mount (NI-1230HS ceramic package) | — |
| Application Class | Class AB, Class C (cellular base station modulation) | — |
| Peak Reflow Temperature | 260 C | — |
| Number of Elements / Configuration | Dual, Common Source, 2 Elements | — |
| Lead Free Status | Lead Free | — |
| Technology | Silicon LDMOS (lateral double-diffused MOSFET) | — |
| Target Modulation | W-CDMA, LTE, TD-LTE | — |
| Frequency | — | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Current | — | 1.4 A |
| Output Power (Average) | — | 48 W |
| Drain-Source Voltage (Max) | — | 65 V |
| Configuration | — | Common Source, 2 elements |
| Case Connection | — | Source |
| Uri ng Pagpapasok | — | Surface Mount (NI-1230 ceramic flange) |
| Packhaging | — | NI-1230 |
| Application | — | W-CDMA, LTE base station power amplifiers |
| Class of Operation | — | Class AB, Class C |
| Surface Mount | — | Yes |
| Tindminan RoHS | — | Compliant |