MRF8S21200HSR6 vs MRF8S21200HR6 比較
詳細並排比較 MRF8S21200HSR6 由 NXP Semiconductors 與 MRF8S21200HR6 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ 啟用中規格比較
| 參數 | MRF8S21200HSR6 | MRF8S21200HR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Output Power (Avg, W-CDMA/LTE) | 48 W at 28 V | — |
| Power Gain | 18.1 dB | 18.1 dB |
| Test Voltage | 28 V | 28 V |
| Test Current (Quiescent) | 1.4 A | — |
| Minimum Breakdown Voltage (Drain-Source) | 65 V | — |
| Maximum Junction Temperature | 225 C | — |
| Mounting Configuration | Surface Mount (NI-1230HS ceramic package) | — |
| Application Class | Class AB, Class C (cellular base station modulation) | — |
| Peak Reflow Temperature | 260 C | — |
| Number of Elements / Configuration | Dual, Common Source, 2 Elements | — |
| Lead Free Status | Lead Free | — |
| Technology | Silicon LDMOS (lateral double-diffused MOSFET) | — |
| Target Modulation | W-CDMA, LTE, TD-LTE | — |
| Frequency | — | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Current | — | 1.4 A |
| Output Power (Average) | — | 48 W |
| Drain-Source Voltage (Max) | — | 65 V |
| Configuration | — | Common Source, 2 elements |
| Case Connection | — | Source |
| 安裝類型 | — | Surface Mount (NI-1230 ceramic flange) |
| 封裝 | — | NI-1230 |
| Application | — | W-CDMA, LTE base station power amplifiers |
| Class of Operation | — | Class AB, Class C |
| Surface Mount | — | Yes |
| RoHS 狀態 | — | Compliant |