MRFE6S9160HR3 vs MRF6S19200HR5 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRFE6S9160HR3 sa pamamagitan ng NXP Semiconductors at MRF6S19200HR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRFE6S9160HR3 MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 ✓ Nakahanda
NXP Semiconductors
MRF6S19200HR5 MRF6S19200HR5 - 56W RF Power LDMOS 1.93-1.99GHz | NXP

MRF6S19200HR5 - 56W RF Power LDMOS 1.93-1.99GHz | NXP

MRF6S19200HR5 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRFE6S9160HR3 MRF6S19200HR5
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors —
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET LDMOS
Technology HV6E lateral MOSFET (LDMOS-like) RF Power MOSFET
Drain-Source Voltage (V DSS) 70 V (max) —
Drain Current (continuous) [DATA_NEEDED: typical drain current at TC=25C] —
Operating Frequency Range 865 MHz to 960 MHz —
Test Frequency 880 MHz —
Drain Supply Voltage (V DD) 28 V (typical) —
Output Power (Average) 35 W (single-carrier N-CDMA, 880 MHz) —
Output Power (PEP) [DATA_NEEDED: PEP at specified conditions] —
Power Gain (G ps / G p) 21 dB (typical at 880 MHz) —
Drain Efficiency 32.4% (typical, N-CDMA, 880 MHz) —
Packhaging / Kaso NI-780H-2L (ceramic/metal air-cavity flange-mount) —
Uri ng Pagpapasok Chassis / Flange mount (through-hole RF leads) Flange / Screw Mount
Hanay ng Temperature na Operasyon -40C to +150C (junction) —
Storage Temperature [DATA_NEEDED: storage temperature] —
Thermal Resistance (R thJC) [DATA_NEEDED: thermal resistance junction-to-case] —
Input Match Internally matched input (broadband) —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL Not applicable (non-SMD air-cavity package) —
Drain-Source Voltage (Vds) Max — 66 V
Test Voltage (Vds) — 28 V
Test Current (Ids) — 1.6 A
Frequency Range — 1.93 GHz to 1.99 GHz
Power Gain (Typ) — 17.9 dB
Output Power (Pout) — 56 W (CW)
Packhaging — NI-780H-2L (ceramic flange)
Operating Mode — Class AB, Class C
Application — CDMA base station, multicarrier amplifiers
Input Matching — Internal (broadband)
Lead Free Status — Yes

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita