MRFE6S9160HR3 vs MRFE6P9220HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRFE6S9160HR3 sa pamamagitan ng NXP Semiconductors at MRFE6P9220HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MRFE6S9160HR3 | MRFE6P9220HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors | — |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Packhaging / Kaso | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| Uri ng Pagpapasok | Chassis / Flange mount (through-hole RF leads) | Surface Mount with copper heatsink pad |
| Hanay ng Temperature na Operasyon | -40C to +150C (junction) | [DATA_NEEDED: Tj max / operating range] |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | Not applicable (non-SMD air-cavity package) | — |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| Packhaging | — | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Configuration | — | Common source, 2 elements |
| Lead Free Status | — | Lead Free |