MRFG35010NR5 vs MRFG35005NR5 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRFG35010NR5 sa pamamagitan ng NXP Semiconductors at MRFG35005NR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete
NXP Semiconductors
MRFG35005NR5 MRFG35005NR5 - 4.5W 3.55GHz pHEMT RF FET | NXP Semiconductors

MRFG35005NR5 - 4.5W 3.55GHz pHEMT RF FET | NXP Semiconductors

MRFG35005NR5 Obsolete

Pagsanggunian na paghahambing

Parametro MRFG35010NR5 MRFG35005NR5
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Obsolete Obsolete
Uri ng Transistor pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz —
Operating Frequency Range Up to 3.6 GHz —
Gain 10 dB (typical at 3.55 GHz) —
Output Power (CW) 9 W —
Voltage - Rated 15 V —
Voltage - Test 12 V —
Current - Test 180 mA —
Current Rating 2.9 A 1.7 A
Packhaging / Kaso PLD-1.5 PLD-1.5
Supplier Device Package PLD-1.5 PLD-1.5
Uri ng Pagpapasok Surface Mount Flange / Chassis Mount
Configuration Single, unmatched Single, N-Channel
Application WLL/MMDS/BWA/UMTS driver stages —
Tindminan RoHS [DATA_NEEDED: rohs status] [DATA_NEEDED: RoHS compliance]
Lead Free Status [DATA_NEEDED: lead free status] —
Operating Frequency — 3.55 GHz
Power Gain — 11 dB
Output Power — 4.5 W
Test Voltage — 12 V
Quiescent Current (Idq) — 80 mA
Drain-Source Voltage Rating — 15 V
Packaging — Bulk / Tape & Reel
Part Status — Obsolete

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