MT40A1G16KNR-075-IT-E vs K4A8G165WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A1G16KNR-075-IT-E sa pamamagitan ng Micron Technology at K4A8G165WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A1G16KNR-075-IT-E - 16Gb DDR4-2666 1Gx16 SDRAM | Micron
MT40A1G16KNR-075-IT-E ObsoleteSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A1G16KNR-075-IT-E | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Memory | DDR4 SDRAM (Volatile) | DDR4 SDRAM (DRAM, volatile) |
| Density | 16 Gbit (2 GB) | — |
| Organisasyon | 1G × 16 | — |
| Speed Grade | -075 (DDR4-2666, 2666 MT/s) | — |
| Maksimum na Taktiko ng Oras | 1.33 GHz | — |
| CAS Latency Timing | 19 ns (CL19) | — |
| Supply Voltage VDD | 1.2 V nominal (1.14 V–1.26 V) | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Word VPP | 2.5 V | — |
| Temperature na Operasyon | 0 °C to +95 °C (Industrial) | -40C to +95C |
| Packhaging | 96-ball FBGA (7.5 mm × 13.5 mm × 1.1 mm) | 96-ball FBGA (PBGA96) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Architecture | Dual-Die Package (DDP) | — |
| JEDEC Standard | JESD79-4 (DDR4) | — |
| Tindminan RoHS | Compliant | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Interface | — | Parallel (DDR4 SDRAM bus) |
| Supply Voltage (VDD) | — | 1.2 V |
| Rate ng Data | — | 2400 Mbps/pin (DDR4-2400) |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |