MT40A1G8AG-062E vs H5AN8G8NCJR-VKC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MT40A1G8AG-062E sa pamamagitan ng Micron Technology at H5AN8G8NCJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ Nakahanda
SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MT40A1G8AG-062E H5AN8G8NCJR-VKC
Brand Micron Technology SK hynix
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR4 SDRAM DDR4 SDRAM (volatile)
Laki ng Memory 8 Gbit 8 Gbit
Organisasyon 1G x 8 —
Interface Parallel Parallel (DDR4)
Clock Frequency 1.6 GHz (DDR4-3200, 3200 MT/s data rate) 1.6 GHz
Clock Cycle Time 19 ns class (-062E speed grade) —
Supply Voltage (VDD) 1.2 V 1.14 V to 1.26 V (1.2 V class)
Packhaging 78-FBGA (7.5 x 11 mm) FBGA-78 (78-ball fine-pitch BGA)
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount
Temperature Grade Automotive (AUT) —
Access Time (CAS Latency class) DDR4-3200 timing class (tAA per datasheet) —
Bank Group Architecture Yes (DDR4 bank groups) —
Termination On-Die Termination (ODT) —
CA Parity Supported (DDR4 command/address parity) —
Packaging Option Tape and Reel (TR / :R suffix) —
Tindminan RoHS [DATA_NEEDED: RoHS status] Compliant
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Refresh Rate [DATA_NEEDED: refresh rate] [DATA_NEEDED: refresh period]
Memory Organization — 1G x 8
Rate ng Data — 2666 Mbps/pin
Operating Current (typ) — 30 mA
Standby Current (typ) — 3 mA
Temperature na Operasyon — 0C to +85C
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Latensya ng CAS — [DATA_NEEDED: CAS Latency]

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