MT40A1G8AG-062E vs H5AN8G8NCJR-VKC 比較
詳細並排比較 MT40A1G8AG-062E 由 Micron Technology 與 H5AN8G8NCJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A1G8AG-062E | H5AN8G8NCJR-VKC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| 記憶體容量 | 8 Gbit | 8 Gbit |
| 組織 | 1G x 8 | — |
| 介面 | Parallel | Parallel (DDR4) |
| Clock Frequency | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) | 1.6 GHz |
| Clock Cycle Time | 19 ns class (-062E speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V (1.2 V class) |
| 封裝 | 78-FBGA (7.5 x 11 mm) | FBGA-78 (78-ball fine-pitch BGA) |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| Temperature Grade | Automotive (AUT) | — |
| Access Time (CAS Latency class) | DDR4-3200 timing class (tAA per datasheet) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| Termination | On-Die Termination (ODT) | — |
| CA Parity | Supported (DDR4 command/address parity) | — |
| Packaging Option | Tape and Reel (TR / :R suffix) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: refresh period] |
| Memory Organization | — | 1G x 8 |
| 資料速率 | — | 2666 Mbps/pin |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| 工作溫度 | — | 0C to +85C |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |