MT40A1G8SA-075:E vs K4A8G085WC-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A1G8SA-075:E sa pamamagitan ng Micron Technology at K4A8G085WC-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | MT40A1G8SA-075:E | K4A8G085WC-BCTD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Huling Pagbili |
| Uri ng Memory | SDRAM - DDR4 | DDR4 SDRAM |
| Laki ng Memory | 8Gbit (1G x 8) | — |
| Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Rate ng Data | 2666 MT/s | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2 V (1.14 V to 1.26 V) |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Packhaging | 78-FBGA (7.5x11 mm) | 78-ball FBGA (78FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | Yes |
| Data Mask Function | Supported | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| Organisasyon | — | 1G x 8 |
| Ball Pitch | — | 0.8 mm |
| Temperature na Operasyon | — | 0C to +95C |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Uri ng Interface | — | Synchronous, parallel |