MT40A1G8SA-075:E vs K4A8G085WC-BCTD 比較
詳細並排比較 MT40A1G8SA-075:E 由 Micron Technology 與 K4A8G085WC-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最後購買機會規格比較
| 參數 | MT40A1G8SA-075:E | K4A8G085WC-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 最後購買 |
| 記憶體類型 | SDRAM - DDR4 | DDR4 SDRAM |
| 記憶體容量 | 8Gbit (1G x 8) | — |
| 介面 | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| 資料速率 | 2666 MT/s | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2 V (1.14 V to 1.26 V) |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| 工作溫度範圍 | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| 封裝 | 78-FBGA (7.5x11 mm) | 78-ball FBGA (78FBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | Yes |
| Data Mask Function | Supported | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| 組織 | — | 1G x 8 |
| Ball Pitch | — | 0.8 mm |
| 工作溫度 | — | 0C to +95C |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| 介面類型 | — | Synchronous, parallel |