MT40A2G8AG-062E vs H5ANAG8NCMR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A2G8AG-062E sa pamamagitan ng Micron Technology at H5ANAG8NCMR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron
MT40A2G8AG-062E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A2G8AG-062E | H5ANAG8NCMR-VKC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organisasyon | 2G x 8 | — |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| Latensya ng CAS | CL22 (DDR4-3200) | [DATA_NEEDED: CAS latency for VK speed bin] |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Packhaging | 78-FBGA (7.5 x 11 mm) | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Die Revision | AG (current generation) | — |
| Laki ng Memory | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Rate ng Data | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade | — | VK (per SK hynix speed-bin suffix) |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |