MT41K256M16HA-107AAT:E vs NT5CB256M16CP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16HA-107AAT:E sa pamamagitan ng Micron Technology at NT5CB256M16CP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16HA-107AAT:E - 4Gbit DDR3L SDRAM | Micron
MT41K256M16HA-107AAT:E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT41K256M16HA-107AAT:E | NT5CB256M16CP-DI |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4Gbit (256M x 16) | — |
| Rate ng Data | 933 MHz (DDR3L-1866) | 1600 Mbps/pin (max) |
| Access Time | 20 ns | — |
| Volte ng Pagbibigay | 1.35V | 1.35 V (DDR3L) |
| Interface | Parallel | — |
| Packhaging | 96-FBGA (9x14mm) | TFBGA-96 |
| Temperature na Operasyon | 0°C to +95°C (Tc) | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Latensya ng CAS | 13 (typical) | — |
| Burst Length | 8, 4 | — |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh, self-refresh | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Additive Latency | — | 0-13 |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Differential Clock Input | — | Yes (CK, CK#) |
| On-Die Termination (ODT) | — | Yes |