NTHL040N120SC1 vs NVHL072N120SC1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NTHL040N120SC1 sa pamamagitan ng onsemi at NVHL072N120SC1 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NTHL040N120SC1 | NVHL072N120SC1 |
|---|---|---|
| Brand | onsemi | onsemi |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | Silicon Carbide (SiC), EliteSiC M1 | M1 planar SiC |
| Channel Type | N-Channel | — |
| VDS (Drain-Source Voltage) | 1200 V | — |
| RDS(on) (Max) | 40 mΩ | — |
| Continuous Drain Current (Tc) | 60 A | [DATA_NEEDED: ID at Tc for NVHL072N120SC1] |
| Power Dissipation (Tc) | 348 W | [DATA_NEEDED: PD at Tc for NVHL072N120SC1] |
| Avalanche Energy EAS | 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) | — |
| Packhaging | TO-247-3L (Through Hole) | TO-247-3 (through hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Configuration | Single FET | — |
| Gate Charge | [DATA_NEEDED: total gate charge Qg] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss] | — |
| Junction Temperature Range | [DATA_NEEDED: Tj range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| Tindminan RoHS | Compliant | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL] | — |
| Device Type | — | N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC |
| Drain-Source Voltage (VDS) | — | 1200 V |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on) max for NVHL072N120SC1] |
| Total Gate Charge (QG tot) | — | [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade) |
| Effective Output Capacitance (Coss) | — | [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade) |
| 100% UIL Tested | — | Yes |
| AEC-Q101 | — | Qualified |
| PPAP | — | Capable |
| Halide Free | — | Yes |