NTHL040N120SC1 vs NVHL072N120SC1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma NTHL040N120SC1 tarafından onsemi ve NVHL072N120SC1 tarafından onsemiAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | NTHL040N120SC1 | NVHL072N120SC1 |
|---|---|---|
| Marka | onsemi | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | Silicon Carbide (SiC), EliteSiC M1 | M1 planar SiC |
| Channel Type | N-Channel | — |
| VDS (Drain-Source Voltage) | 1200 V | — |
| RDS(on) (Max) | 40 mΩ | — |
| Continuous Drain Current (Tc) | 60 A | [DATA_NEEDED: ID at Tc for NVHL072N120SC1] |
| Power Dissipation (Tc) | 348 W | [DATA_NEEDED: PD at Tc for NVHL072N120SC1] |
| Avalanche Energy EAS | 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) | — |
| Paket | TO-247-3L (Through Hole) | TO-247-3 (through hole) |
| Montaj Türü | Through Hole | Through Hole |
| Configuration | Single FET | — |
| Gate Charge | [DATA_NEEDED: total gate charge Qg] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss] | — |
| Junction Temperature Range | [DATA_NEEDED: Tj range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| RoHS Durumu | Compliant | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL] | — |
| Device Type | — | N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC |
| Drain-Source Voltage (VDS) | — | 1200 V |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on) max for NVHL072N120SC1] |
| Total Gate Charge (QG tot) | — | [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade) |
| Effective Output Capacitance (Coss) | — | [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade) |
| 100% UIL Tested | — | Yes |
| AEC-Q101 | — | Qualified |
| PPAP | — | Capable |
| Halide Free | — | Yes |