NTHL040N120SC1 vs NVHL072N120SC1 比較
詳細並排比較 NTHL040N120SC1 由 onsemi 與 NVHL072N120SC1 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NTHL040N120SC1 | NVHL072N120SC1 |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | Silicon Carbide (SiC), EliteSiC M1 | M1 planar SiC |
| Channel Type | N-Channel | — |
| VDS (Drain-Source Voltage) | 1200 V | — |
| RDS(on) (Max) | 40 mΩ | — |
| Continuous Drain Current (Tc) | 60 A | [DATA_NEEDED: ID at Tc for NVHL072N120SC1] |
| Power Dissipation (Tc) | 348 W | [DATA_NEEDED: PD at Tc for NVHL072N120SC1] |
| Avalanche Energy EAS | 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) | — |
| 封裝 | TO-247-3L (Through Hole) | TO-247-3 (through hole) |
| 安裝類型 | Through Hole | Through Hole |
| Configuration | Single FET | — |
| Gate Charge | [DATA_NEEDED: total gate charge Qg] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss] | — |
| Junction Temperature Range | [DATA_NEEDED: Tj range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| RoHS 狀態 | Compliant | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL] | — |
| Device Type | — | N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC |
| Drain-Source Voltage (VDS) | — | 1200 V |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on) max for NVHL072N120SC1] |
| Total Gate Charge (QG tot) | — | [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade) |
| Effective Output Capacitance (Coss) | — | [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade) |
| 100% UIL Tested | — | Yes |
| AEC-Q101 | — | Qualified |
| PPAP | — | Capable |
| Halide Free | — | Yes |