RTAX250S-1LG624V vs RTAX2000S-1LG624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX250S-1LG624V sa pamamagitan ng Microchip Technology at RTAX2000S-1LG624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip
RTAX250S-1LG624V ✓ NakahandaMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX250S-1LG624V | RTAX2000S-1LG624V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent Gate Count | 250000 gates | — |
| Configurable Logic Blocks (CLBs) | 2816 | 21,504 |
| Logic Cells | 4224 | — |
| I/Os | 248 | — |
| Core Supply Voltage | 1.5 V nominal | [DATA_NEEDED: core supply voltage] |
| Speed Grade | -1 | -1 |
| Packhaging | CGA624 (LG624), 624-column ceramic column grid array | CG624, 624-pin ceramic column grid array |
| Package Suffix | V (leaded column finish) | — |
| Temperature na Operasyon | -55C to +125C | — |
| Technology | CMOS, antifuse programmable | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] | — |
| Configuration | Live at power-up, single chip, no boot PROM | Single-chip, live at power-up (no boot device required) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] | [DATA_NEEDED: RoHS status] |
| Katayuan ng Lifecycle | Active | — |
| Equivalent System Gates | — | 2,000,000 gates |
| User I/Os (maximum, family) | — | Up to 684 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC protection |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |