SRVBS260NT3G vs SS0530_R1_00001 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng SRVBS260NT3G sa pamamagitan ng onsemi at SS0530_R1_00001 sa pamamagitan ng Panjit. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | SRVBS260NT3G | SS0530_R1_00001 |
|---|---|---|
| Brand | onsemi | Panjit |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | onsemi | Panjit International Inc. |
| Product Type | Schottky Power Rectifier (single diode) | — |
| Packhaging | SMB (surface mount, C-bend leads) | SOD-123 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Reverse Test Voltage (VRRM) | 60 V | — |
| Maximum Average Forward Current (IF(AV)) | 2 A | — |
| Maximum Forward Voltage (VF) | 0.63 V at 2 A | — |
| Hanay ng Temperature na Operasyon | -55 C to +125 C | [DATA_NEEDED: operating temperature range] |
| Peak Reflow Temperature | 260 C | — |
| Terminal Form | C BEND | — |
| Terminal Position | DUAL | — |
| Number of Terminals | 2 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Finish | Matte Tin | — |
| Tindminan RoHS | Compliant | Compliant |
| Diode Technology | Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact) | — |
| Diode Type | — | Schottky Barrier Diode (SBD) |
| Configuration | — | Single, 1 Phase, 1 Element |
| Reverse Voltage (VRRM) | — | 30 V |
| Average Rectified Forward Current (IF(AV)) | — | 500 mA |
| Forward Voltage Drop (VF) | — | 430 mV @ 500 mA |
| Bilang ng Pin | — | 2 |
| Forward Surge Current (IFSM) | — | [DATA_NEEDED: IFSM] |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: IR at rated VR] |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr] |
| Packaging | — | Tape & Reel |
| Technology | — | Schottky (metal-semiconductor junction) |