BSC060N10NS3GATMA1 vs BSC094N06LS5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC060N10NS3GATMA1 tarafından Infineon ve BSC094N06LS5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSC060N10NS3GATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Ta) | 14.9 A | — |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 125 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V | — |
| İşletim Jant Sıcaklığı | -55 C to +150 C | -55 °C to +150 °C |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS™ 5 (logic-level) |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | — |
| Klorürsüz | [DATA_NEEDED: halogen status] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| Part Number | — | BSC094N06LS5ATMA1 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |