IPB027N10N3GATMA1 vs IPB120N10S405ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB027N10N3GATMA1 tarafından Infineon ve IPB120N10S405ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPB027N10N3GATMA1 | IPB120N10S405ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | Enhancement Mode (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| İşletim Sıcaklığı Aralığı | -55°C to +175°C (TJ) | -55 C to +175 C |
| Paket | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) Surface Mount |
| Montaj Türü | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS Durumu | Compliant | — |
| MSL Seviyesi | [DATA_NEEDED: moisture sensitivity level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | [DATA_NEEDED: Qg] |
| Transistor Türü | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Power Dissipation (PD) at Tc | — | 190 W |
| On-Resistance R_DS(on) (typ) | — | 5 mΩ at VGS=10 V |
| MSL (Moisture Sensitivity Level) | — | MSL1 (unlimited floor life at ≤30 C / 85% RH) |
| Peak Reflow Temperature | — | 260 C |
| Avalanche Tested | — | 100% (production-screened) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| Gate Threshold Voltage (typ) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr - body diode] |