IPD082N10N3GATMA1 vs IPD60R145CFD7ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD082N10N3GATMA1 tarafından Infineon ve IPD60R145CFD7ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AktifInfineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPD082N10N3GATMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (Trench N-Channel) | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| İşletim Jant Sıcaklığı | -55°C to +175°C | — |
| Paket / Kas | PG-TO252-3 (DPAK), surface mount | — |
| Montaj Türü | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| Pin Sayısı | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| RoHS Durumu | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Paket | — | TO-252AA (DPAK) surface mount |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| İşletim Sıcaklığı | — | -55C to +150C (junction) |
| Series | — | CoolMOS CFD7 |
| Target Application | — | ZVS / LLC resonant converters, soft switching |