IPD082N10N3GATMA1 vs IPD60R145CFD7ATMA1 比較

詳細並排比較 IPD082N10N3GATMA1 由 Infineon 與 IPD60R145CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IPD082N10N3GATMA1 IPD60R145CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (Trench N-Channel) CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
工作接面溫度 -55°C to +175°C —
封裝 / 外殼 PG-TO252-3 (DPAK), surface mount —
安裝類型 Surface Mount Surface Mount (DPAK, 3-pin + tab)
腳位數 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
RoHS 狀態 Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
MSL 等級 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
封裝 — TO-252AA (DPAK) surface mount
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
工作溫度 — -55C to +150C (junction)
Series — CoolMOS CFD7
Target Application — ZVS / LLC resonant converters, soft switching

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