IPL60R065P7AUMA1 vs IPL60R105P7AUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPL60R065P7AUMA1 tarafından Infineon ve IPL60R105P7AUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPL60R065P7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOS™ P7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | 41 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΩ (max) | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | 201 W | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | — |
| Rise Time (t<sub>r</sub>) | 7 ns | — |
| Fall Time (t<sub>f</sub>) | 4 ns | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +150 °C (T<sub>j</sub>) | -55C to +150C |
| Paket | PG-VSON-4 (surface mount with exposed pad) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Pin Sayısı | 4 | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Polarity | Single N-channel | — |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | — |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | 0.053 Ω | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Klorürsüz | Yes | Yes |
| Series | — | CoolMOS P7 |
| Technology | — | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Lead-Free | — | Yes |