IPL60R065P7AUMA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IPL60R065P7AUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R065P7AUMA1
IPL60R065P7AUMA1 - 600V 65mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R065P7AUMA1 β ActiveInfineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveSpecification Comparison
| Parameter | IPL60R065P7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOSβ’ P7 (superjunction) | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 41 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΞ© (max) | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 201 W | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | β |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | β |
| Rise Time (t<sub>r</sub>) | 7 ns | β |
| Fall Time (t<sub>f</sub>) | 4 ns | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T<sub>j</sub>) | -55C to +150C |
| Package | PG-VSON-4 (surface mount with exposed pad) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Number of Pins | 4 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Polarity | Single N-channel | β |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | β |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 Β°C) | 0.053 Ξ© | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Halogen-Free | Yes | Yes |
| Series | β | CoolMOS P7 |
| Technology | β | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | β | 600 V |
| On-Resistance (RDS(on)) max | β | 105 mΞ© |
| Continuous Drain Current (ID) at Tc | β | 33 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | β | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.5 V |
| Gate Charge (Qg) typ | β | 45 nC |
| Lead-Free | β | Yes |