IRF7306TRPBF vs IRF7105PBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF7306TRPBF tarafından Infineon ve IRF7105PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF7306TRPBF IRF7105PBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C —
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) HEXFET (Fifth Generation)
İşletim Sıcaklığı Aralığı -55°C to +150°C (junction) —
Paket 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) —
Montaj Türü Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL Seviyesi 1 (per JEDEC J-STD-020) —
RoHS Compliance Yes (PBF suffix indicates Pb-free) Compliant
Qualification Consumer market qualification standards (per IR/Infineon datasheet) Industrial
Avalanche Rated Yes (ruggedized device per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7105PBF
FET Type — N-Channel and P-Channel (Dual, Complementary)
N-Channel VDS (Drain-Source Voltage) — 25 V
P-Channel VDS (Drain-Source Voltage) — 25 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
Total Package Power Dissipation (PD) — 2 W
Paket / Kas — 8-SOIC (SO-8)
Pin Sayısı — 8
Lead-Free / Halogen-Free — Yes / Yes
MSL (Moisture Sensitivity Level) — MSL1
Soldering Compatibility — Vapor Phase, Infrared, Wave
dv/dt Rating — Dynamic (rated per datasheet)

Dökümanlar & Kaynaklar

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