IRF7306TRPBF vs IRF7105PBF 比較

詳細並排比較 IRF7306TRPBF 由 Infineon 與 IRF7105PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7306TRPBF IRF7105PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C —
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) HEXFET (Fifth Generation)
工作溫度範圍 -55°C to +150°C (junction) —
封裝 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) —
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS Compliance Yes (PBF suffix indicates Pb-free) Compliant
Qualification Consumer market qualification standards (per IR/Infineon datasheet) Industrial
Avalanche Rated Yes (ruggedized device per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7105PBF
FET Type — N-Channel and P-Channel (Dual, Complementary)
N-Channel VDS (Drain-Source Voltage) — 25 V
P-Channel VDS (Drain-Source Voltage) — 25 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
Total Package Power Dissipation (PD) — 2 W
封裝 / 外殼 — 8-SOIC (SO-8)
腳位數 — 8
Lead-Free / Halogen-Free — Yes / Yes
MSL (Moisture Sensitivity Level) — MSL1
Soldering Compatibility — Vapor Phase, Infrared, Wave
dv/dt Rating — Dynamic (rated per datasheet)

資料表與資源

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