IRFB3207ZPBF vs IRF3205ZSTRLPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB3207ZPBF tarafından Infineon ve IRF3205ZSTRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB3207ZPBF IRF3205ZSTRLPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 75 V 55 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: IDM]
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm 6.5 mOhm
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
İşletim Jant Sıcaklığı -55 C to +175 C -55C to +175C
Paket TO-220AB (3-lead through-hole) D2PAK (TO-263)
Montaj Türü Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL Seviyesi N/A (through-hole) 1
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 110 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — 76 nC
Power Dissipation (PD) at Tc=25C — 170 W
Packaging — Tape & Reel (left reel)
RoHS Durumu — Compliant
Body Diode — Avalanche-rated intrinsic

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