MHT1008NT1515 vs MHT1008NT1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MHT1008NT1515 tarafından NXP Semiconductors ve MHT1008NT1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MHT1008NT1515 | MHT1008NT1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MHT1008NT1515 | MHT1008NT1 |
| Device Type | RF Power LDMOS Transistor, N-Channel Enhancement-Mode | — |
| Operating Frequency | 2450 MHz (ISM band) | 2400 MHz to 2500 MHz (2450 MHz typ) |
| Output Power (CW) | 12.5 W | 12.5 W |
| Drain-Source Voltage V(BR)DSS | 65 V (minimum) | — |
| Gate Threshold Voltage VGS(th) | 1.6 V | — |
| Typical Gain | 20.9 dB at 2.45 GHz | — |
| Drain Bias (typical) | 28 V | — |
| Total Power Dissipation | 48.1 W | — |
| İşletim Jant Sıcaklığı | -40 °C to +150 °C | — |
| Paket | PLD-1.5W (PLD-1) ceramic flange | — |
| Montaj Türü | Surface Mount / Flange Mount with heat spreader | Chassis / flange mount with bolt-down heatsink |
| RoHS Durumu | Compliant | [DATA_NEEDED: rohs_status] |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Transistor Türü | — | LDMOS, N-Channel Enhancement-Mode |
| Application | — | RF Power Transistor, ISM Band |
| Test Frequency | — | 2450 MHz |
| Drain Supply Voltage (Vdd) | — | 28 V (typical) |
| Power Gain (typical) | — | 18.6 dB at 2450 MHz |
| Drain Current | — | 110 mA |
| Power Gain (DigiKey reported) | — | 20.9 dB (max value reported by distributor) |
| Paket / Kas | — | PLD-1.5W (SOT1811), ceramic flanged |
| Lead-Free | — | [DATA_NEEDED: lead_free] |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: msl_level] |