MHT1008NT1515 vs MHT1008NT1 比較
詳細並排比較 MHT1008NT1515 由 NXP Semiconductors 與 MHT1008NT1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MHT1008NT1515 | MHT1008NT1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MHT1008NT1515 | MHT1008NT1 |
| Device Type | RF Power LDMOS Transistor, N-Channel Enhancement-Mode | — |
| Operating Frequency | 2450 MHz (ISM band) | 2400 MHz to 2500 MHz (2450 MHz typ) |
| Output Power (CW) | 12.5 W | 12.5 W |
| Drain-Source Voltage V(BR)DSS | 65 V (minimum) | — |
| Gate Threshold Voltage VGS(th) | 1.6 V | — |
| Typical Gain | 20.9 dB at 2.45 GHz | — |
| Drain Bias (typical) | 28 V | — |
| Total Power Dissipation | 48.1 W | — |
| 工作接面溫度 | -40 °C to +150 °C | — |
| 封裝 | PLD-1.5W (PLD-1) ceramic flange | — |
| 安裝類型 | Surface Mount / Flange Mount with heat spreader | Chassis / flange mount with bolt-down heatsink |
| RoHS 狀態 | Compliant | [DATA_NEEDED: rohs_status] |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| 電晶體類型 | — | LDMOS, N-Channel Enhancement-Mode |
| Application | — | RF Power Transistor, ISM Band |
| Test Frequency | — | 2450 MHz |
| Drain Supply Voltage (Vdd) | — | 28 V (typical) |
| Power Gain (typical) | — | 18.6 dB at 2450 MHz |
| Drain Current | — | 110 mA |
| Power Gain (DigiKey reported) | — | 20.9 dB (max value reported by distributor) |
| 封裝 / 外殼 | — | PLD-1.5W (SOT1811), ceramic flanged |
| Lead-Free | — | [DATA_NEEDED: lead_free] |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: msl_level] |