MRF8S19260HSR6 vs MRF6S19100HR3 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF8S19260HSR6 tarafından NXP Semiconductors ve MRF6S19100HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF8S19260HSR6 MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 ✓ Aktif
NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ Aktif

Özellik Karşılaştırması

Parametre MRF8S19260HSR6 MRF6S19100HR3
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number MRF8S19260HSR6 MRF6S19100HR3
Transistor Türü LDMOS, N-Channel, Dual —
Frequency Band 1930 MHz to 1990 MHz —
Test Frequency 1.99 GHz —
Drain-Source Voltage (Max Rated) 65 V —
Operating Drain Voltage (Typical) 30 V —
Continuous Drain Current (Test) 1.6 A —
Output Power (CW / Avg) 74 W average —
Power Gain 18.2 dB at 1.99 GHz 16.1 dB (typical at 1.99 GHz)
Paket / Kas NI-1230S-8 (ceramic air-cavity bolt-down) NI-780H-2L (Case 465-06, Style 1)
Montaj Türü Chassis / Flange Mount (through-hole RF bolt-down) Flanged / Screw-mount with ceramic body
Lead Free Status Compliant (per DigiKey listing) —
RoHS Durumu Compliant Compliant (per NXP product page)
Operating Mode Class AB and Class C capable Class AB (linear)
Application W-CDMA, CDMA, multi-carrier cellular base station PA —
Device Type — RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
Technology — N-Channel LDMOS
Operating Frequency Range — 1930 MHz to 1990 MHz
Output Power (P1dB, Avg) — 22 W (N-CDMA Average)
Drain Voltage (Vds) — 28 V
Quiescent Drain Current (Idq) — 900 mA (typical)
Lead Style — Dual blade (HR3 suffix)
Target Applications — N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL

Dökümanlar & Kaynaklar

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