MRF8S19260HSR6 vs MRF6S19100HR3 比較
詳細並排比較 MRF8S19260HSR6 由 NXP Semiconductors 與 MRF6S19100HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ 啟用中規格比較
| 參數 | MRF8S19260HSR6 | MRF6S19100HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8S19260HSR6 | MRF6S19100HR3 |
| 電晶體類型 | LDMOS, N-Channel, Dual | — |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | 16.1 dB (typical at 1.99 GHz) |
| 封裝 / 外殼 | NI-1230S-8 (ceramic air-cavity bolt-down) | NI-780H-2L (Case 465-06, Style 1) |
| 安裝類型 | Chassis / Flange Mount (through-hole RF bolt-down) | Flanged / Screw-mount with ceramic body |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| RoHS 狀態 | Compliant | Compliant (per NXP product page) |
| Operating Mode | Class AB and Class C capable | Class AB (linear) |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |