MW7IC2240NBR1 vs MW6IC2240NBR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MW7IC2240NBR1 tarafından NXP Semiconductors ve MW6IC2240NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete
NXP Semiconductors
MW6IC2240NBR1 MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP

MW6IC2240NBR1 Obsolete

Özellik Karşılaştırması

Parametre MW7IC2240NBR1 MW6IC2240NBR1
Marka NXP Semiconductors NXP Semiconductors
Kategori RF Amplifiers RF Amplifiers
Yaşam Döngüsü Durumu Obsolete Obsolete
Frequency Range 2110 MHz to 2170 MHz (usable 2000-2200 MHz) 2110 MHz to 2170 MHz
Modulation / RF Type W-CDMA (also TD-SCDMA, LTE) —
Output Power (Average) 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA —
Supply Voltage (VDD) 28 V (rated 24 V to 32 V operation) —
Quiescent Current Stage 1 (IDQ1) 90 mA 300 mA
Quiescent Current Stage 2 (IDQ2) 420 mA 320 mA
Minimum Gain 15 dB (typical 30 dB) —
Input VSWR 5:1 —
Output VSWR 5:1 —
Nominal Impedance 50 ohm (on-chip matched) —
P1dB (Output) 46 dBm (per distributor listing) —
Technology RF LDMOS (multi-stage integrated) RF LDMOS (Laterally Diffused MOSFET)
Paket TO-272 WB-16 (over-molded plastic, 16-lead) TO-272 WB-16 (over-molded plastic, 16-lead wideband)
Montaj Türü Surface Mount —
Terminal Finish Matte Tin (Sn) —
Package Body Material Plastic / Epoxy —
Operating Mode 100% PAR tested for W-CDMA-like signals —
RoHS Durumu [DATA_NEEDED: RoHS compliance] Compliant
RF Type — Cellular, W-CDMA, TD-SCDMA driver amplifier
Supply Voltage (Operating) — 26 V to 32 V (typical 28 V)
Average Output Power (2-carrier W-CDMA) — 4.5 W (typ)
Power Gain — 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm)
Drain Current (operating, Pout=25 dBm avg) — 210 mA (typ)
IM3 (10 MHz offset, 2-carrier W-CDMA) — -59 dBc (typ)
ACPR (5 MHz offset, 2-carrier W-CDMA) — -62 dBc (typ)
VSWR Tolerance — 3:1 at 28 Vdc, 2170 MHz, 20 W CW
Number of Stages — 2 (cascaded, integrated)
Input / Output Matching — On-chip, 50 ohm single-ended
Operating Case Temperature — [DATA_NEEDED: operating case temperature range]

Dökümanlar & Kaynaklar

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