2EDN7533BXTSA1 - Dual 5A Low-Side Gate Driver SOT-23-6 | Infineon
MPN: 2EDN7533BXTSA1 ✓ فعال2EDN7533BXTSA1 جائزہ
Background: A gate driver is a power-management IC that sits between a low-power control signal (PWM from a microcontroller or controller IC) and the high-current gate of a power semiconductor switch. Low-side drivers specifically reference the source/emitter of the switch to ground and pull the gate up/down to VDD/0V. Within the broader taxonomy, gate drivers belong to: gate driver IC -> power management IC -> power semiconductor driver -> signal chain/power interface. Gate drivers are essential whenever the controller cannot source/sink enough current to switch the power device quickly, which is nearly always true for modern WBG devices with sub-nC gate charge requirements at MHz speeds.
Key features include a wide 4.5 V to 20 V supply range, integrated active output voltage clamping for MOSFET gate protection, under-voltage lockout (UVLO) for safe start-up, and LV-TTL compatible inputs that tolerate -12 V to +22 V absolute maximum. The inverting logic variant (suffix -33) flips the polarity of each channel, useful in half-bridge or synchronous-rectifier control where the controller outputs an active-low PWM. The SOT-23-6 footprint occupies only 2.9x1.6 mm, enabling extremely compact power stages.
Architecturally, the device uses a matched-pair output stage design with tightly-trimmed timing, ensuring that propagation delays are consistent across temperature and process. The integrated bootstrap-style clamping protects against dv/dt-induced gate over-voltage when driving WBG devices - a critical feature for GaN HEMTs that typically have ±7 V gate ratings.
Typical applications include synchronous buck/flyback DC-DC converters, half-bridge and full-bridge motor drivers, class-D audio amplifiers, and high-frequency GaN/SiC switching converters. The inverting variant is particularly suited to controllers that natively drive the low-side FET with a low-true PWM, eliminating an external logic inverter.
When designing with this part, place input/output bypass capacitors (typically 100 nF ceramic) within 2 mm of the VDD and GND pins. Maintain a 4-layer or 2-layer PCB with a low-impedance ground return under the driver to handle the 5 A peak di/dt without inductive ringing. Derate peak current for continuous operation above 100 kHz.
This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and application-specific design notes not found in the standalone manufacturer datasheet, providing a single engineering reference for sourcing and substitution decisions.
کے لیے ڈراپ اِن متبادل 2EDN7533BXTSA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 2EDN7533BXTSA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Input Logic Compatibility, Mounting Type, Function, Input Voltage Tolerance.
2EDN7533RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDN7534RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDN7434RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDN7116GXTMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC27517DBVR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
2EDN7533BXTSA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Product Type | Dual-channel low-side gate driver IC |
| Number of Channels | 2 |
| Logic Polarity | Inverting |
| Peak Source/Sink Current | ±5 A |
| Supply Voltage (VDD) | 4.5 V to 20 V |
| Propagation Delay (typ.) | 19 ns |
| Input Compatibility | LV-TTL, -12 V to +22 V absolute max tolerant |
| UVLO | Integrated under-voltage lockout |
| Output Clamping | Active gate voltage clamping |
| آپریٹنگ درجہ حرارت رینج | -40 C to +125 C |
| پیکیج | PG-SOT23-6-1 (6-pin SOT-23, 2.9x1.6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
2EDN7533BXTSA1 پن کنفیگریشن
| پن 1 | GND — Ground reference for both channels and supply return |
| پن 2 | IN1 — Logic input 1, LV-TTL compatible, inverting |
| پن 3 | IN2 — Logic input 2, LV-TTL compatible, inverting |
| پن 4 | VDD — Supply voltage input, 4.5 V to 20 V |
| پن 5 | OUT2 — Gate drive output 2, ±5 A peak current |
| پن 6 | OUT1 — Gate drive output 1, ±5 A peak current |
عام استعمالات
2EDN7533BXTSA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Synchronous Buck DC-DC Converter, GaN HEMT Half-Bridge Driver, Class-D Audio Amplifier Output Stage, Brushless DC (BLDC) Motor Driver Low-Side, Telecom Isolated DC-DC Half-Bridge, USB-PD Power Adapter Synchronous Rectifier.
Synchronous Buck DC-DC Converter
The 2EDN7533BXTSA1 drives the low-side synchronous rectifier MOSFET in buck converters with switching frequencies from 300 kHz to 2 MHz. The ±5 A peak current handles MOSFETs with 30-100 nC total gate charge (Qg) without slew-rate limiting, while the 19 ns propagation delay preserves dead-time accuracy critical for efficiency. The 4.5 V to 20 V VDD range matches both 5 V and 12 V input bus designs, and the inverting logic directly drives low-side FETs with active-low PWM from controllers such as the TPS54360. Integrated active output clamping protects MOSFET gates from dv/dt-induced over-voltage during high-side switching transitions.
تجویز کردہ
GaN HEMT Half-Bridge Driver
For GaN HEMT half-bridges operating at MHz switching frequencies, the 2EDN7533BXTSA1's ±5 A peak current and 19 ns propagation delay deliver sub-5 ns rise/fall times on 50 V GaN devices such as the IGOT60R070D1. The integrated active output voltage clamping is critical: GaN gates are typically rated at only +7/-5 V, and uncontrolled dv/dt on the switching node can push the gate beyond safe limits. The SOT-23-6 footprint enables placement within 2 mm of the GaN drain-source terminals, minimizing parasitic gate-loop inductance that otherwise causes ringing and EMI.
تجویز کردہ
Class-D Audio Amplifier Output Stage
In class-D audio amplifiers, the 2EDN7533BXTSA1 drives the half-bridge output MOSFET pair (or full H-bridge) with audio-band PWM (250 kHz to 1 MHz). The 5 A peak current drives large gate-charge output FETs without slowing edges, which is essential for preserving audio linearity and minimizing dead-time distortion. The 19 ns propagation delay maintains tight timing between left/right channels for stereo imaging, while the inverting logic aligns with audio controllers that natively output low-true PWM. Total harmonic distortion (THD) below 0.01% is achievable with proper PCB layout.
تجویز کردہ
Brushless DC (BLDC) Motor Driver Low-Side
The 2EDN7533BXTSA1 drives the three low-side MOSFETs of a 3-phase BLDC motor driver in cordless tools, drones, and e-bikes. Each driver channel sinks/source 5 A peak, sufficient to switch 40-100 V MOSFETs at 25-50 kHz PWM frequency with sub-50 ns rise times. The -40 C to +125 C operating range covers the thermal envelope of enclosed motor housings, while the SOT-23-6 package enables very compact 3-phase inverter PCBs. Two channels can drive two phases simultaneously, with a third phase served by an additional driver IC.
تجویز کردہ
Telecom Isolated DC-DC Half-Bridge
In 48 V telecom bus converters and isolated bus converters, the 2EDN7533BXTSA1 drives the primary-side low-side MOSFET of a half-bridge topology, paired with an isolated high-side driver such as the 1ED3124MC12HXUMA1. The 4.5 V to 20 V VDD range accommodates auxiliary rails from the housekeeping supply, while the -12 V to +22 V input tolerance rejects ground bounce from the high-side switching node. 5 A peak current handles primary MOSFETs up to 250 V breakdown with Qg below 50 nC at 200-500 kHz switching.
تجویز کردہ
USB-PD Power Adapter Synchronous Rectifier
For USB Power Delivery (USB-PD) adapters up to 100 W, the 2EDN7533BXTSA1 drives the secondary-side synchronous rectifier MOSFETs in flyback or active-clamp forward topologies. The 5 A peak current easily switches 60-100 V SR MOSFETs at 100-200 kHz, while the inverting logic interfaces directly with secondary-side SR controllers such as the XDPP1148100BXUMA1. Active output clamping prevents gate over-voltage from the high dv/dt at the SR switching node, which can exceed 10 V/ns in 100 W designs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 2EDN7533BXTSA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 2EDN7533RXTMA1 | 2EDN7534RXTMA1 | 2EDN7434RXTMA1 | 2EDN7116GXTMA1 | UCC27517DBVR |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Texas Instruments |
| Package | PG-SOT23-6-1 (6-pin SOT-23) | PG-SOT23-6-1 (same) | PG-SOT23-6-1 (same) | PG-SOT23-6-1 (same) | PG-SOT23-6-1 (same) | SOT-23-5 (5 pins) |
| Number of Channels | 2 | 2 | 2 | 2 | 2 | 1 (single-channel) |
| Logic Polarity | Inverting | Inverting | Non-inverting | Non-inverting | Non-inverting | Non-inverting |
| Peak Source/Sink Current | ±5 A | ±5 A | ±5 A | ±4 A (-20%) | ±1.5 A (-70%) | ±4 A (-20%) |
| Supply Voltage (VDD) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 18 V |
| Output Clamping | Active voltage clamping | Active clamping | Active clamping | Active clamping | Active clamping | None (external Zener recommended) |
اہم امتیازی خصوصیات
- Dual 5 A peak current in smallest SOT-23-6 package (بمقابلہUCC27517DBVR (TI))
- Integrated active output voltage clamping for WBG protection (بمقابلہ2EDN7434RXTMA1 (Infineon))
- Wider VDD supply range than TI competing drivers (بمقابلہUCC27517DBVR (TI))
ڈیزائن نوٹس
Place the VDD bypass capacitor (100 nF X7R ceramic, plus 1 uF bulk) within 2 mm of pin 4 (VDD) and pin 1 (GND). Use a wide, short ground return path - the high di/dt of 5 A peak in 5 ns creates inductive transients that couple into the input logic if ground impedance is high. A 4-layer PCB with a dedicated ground plane is strongly recommended; on 2-layer boards, place a copper pour directly under the driver footprint to minimize ground-loop inductance.
Do not exceed VDD of 20 V or input voltages of -12 V/+22 V (absolute max). Note that the inverting logic (-33) means that floating inputs default to logic HIGH, which pulls the output LOW - this can cause unintended FET turn-on during controller startup. Always tie unused input pins to GND through a 10 kohm resistor for the inverting variant, or to VDD for the non-inverting variant, to define the off-state.
Estimated: at continuous switching above 1 MHz with 5 A peak pulses, total switching power dissipation reaches 150-300 mW per channel, yielding a junction temperature rise of approximately 40-80 C above ambient on the SOT-23-6 package (theta_JA approximately 200 C/W on a 1 sq inch 2-layer PCB). For continuous high-frequency operation, use a 4-layer PCB with copper pours on all four layers to drop theta_JA below 80 C/W. The output clamping function does not dissipate additional power since it only clamps transient over-voltage.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and consumer power applications. For AEC-Q100 qualified automotive-grade low-side gate drivers, consider Infineon's automotive EiceDRIVER family.
