IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon
MPN: IRF3007STRLPBF ✓ فعالIRF3007STRLPBF جائزہ
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to handle high currents and voltages with minimal conduction loss. As a member of the N-channel enhancement-mode family, the IRF3007STRLPBF turns on when a positive gate-to-source voltage exceeds its threshold, allowing current to flow from drain to source. Within the power-management hierarchy, it sits between signal-level logic MOSFETs and IGBTs (Insulated Gate Bipolar Transistors), offering the best balance of low on-resistance and moderate switching speed for sub-100 V applications.
Key specifications include a drain-to-source breakdown voltage of 75 V, continuous drain current of 62 A at 25 °C case temperature, pulsed drain current handling of 250 A, and a maximum junction temperature of 175 °C. The 12.6 mΩ typical R_DS(on) at VGS = 10 V minimizes conduction losses, while the low gate charge (typically 110 nC total) and fast switching characteristics support efficient high-frequency operation. The D2PAK package provides a low thermal resistance of 40 °C/W junction-to-case, enabling direct PCB heatsink mounting for high-power designs.
Typical applications include industrial motor drives, synchronous rectification in switch-mode power supplies, DC-DC converter high-side switches, battery management systems for 12 V/24 V/48 V rails, and automotive solenoid and relay drivers. The 175 °C maximum junction temperature and avalanche-rated ruggedness make it suitable for harsh-environment designs where repetitive avalanche events may occur.
When designing with this device, ensure the gate drive voltage reaches at least 10 V for full enhancement and minimum R_DS(on). Use a gate resistor (typically 10-100 Ω) to control switching speed and limit ringing, and provide adequate copper pours or an external heatsink to keep junction temperature below 150 °C for reliable long-term operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل IRF3007STRLPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRF3007STRLPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, RoHS Status, Drain-Source Voltage (VDS), Operating Junction Temperature.
IRFB3207ZPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFB4110PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFB3077PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFB3307ZPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFB3207PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFB4310ZPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF1018EPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFH5015TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF3007STRLPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 75 V |
| Continuous Drain Current (Id) at Tc=25°C | 62 A |
| Pulsed Drain Current (Idm) | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | 12.6 mΩ typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 110 nC typical |
| Maximum Power Dissipation (Pd) | 120 W at Tc=25°C |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.0 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | 40 °C/W |
| Package Type | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant (Lead-Free, PBF suffix) |
| Avalanche Rated | Yes (Repetitive Avalanche Allowed up to Tjmax) |
IRF3007STRLPBF پن کنفیگریشن
| پن 1 | Gate — Gate terminal - drive with 10V for full enhancement |
| پن 2 | Drain — Drain terminal - internally connected to the metal tab/backside |
| پن 3 | Source — Source terminal - reference for gate drive |
| پن Tab | Drain — Metal tab electrically connected to pin 2 (Drain) - mount to PCB copper pour or heatsink for thermal dissipation |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IRF3007STRLPBF کے لیے موزوں ہے 6 ایپلیکیشنs: Industrial Motor Drive (BLDC and DC), Synchronous Rectification in SMPS, Battery Management System (BMS) High-Side Switch, Automotive 12 V/24 V Solenoid and Relay Driver, High-Current DC Load Switch, Power Tools and Cordless Equipment.
Industrial Motor Drive (BLDC and DC)
The IRF3007STRLPBF is well suited for industrial motor drive applications requiring high-current switching in the 24 V to 48 V range. Its 62 A continuous drain current rating at 25 °C case and 12.6 mΩ RDS(on) at VGS = 10 V deliver low conduction losses for 30 A to 50 A continuous motor loads. The 175 °C maximum junction temperature supports harsh industrial environments, while the D2PAK package enables direct PCB-mount heatsinking. Pair with a gate driver such as the IR2109SPBF or IR2110SPBF for reliable high-side/low-side drive in three-phase inverter topologies used in industrial BLDC servo motors and conveyor drives.
تجویز کردہ
Synchronous Rectification in SMPS
The IRF3007STRLPBF functions as a synchronous rectifier MOSFET in 48 V to 60 V switch-mode power supplies (SMPS). Its low 12.6 mΩ on-resistance at VGS = 10 V reduces conduction loss compared to Schottky diodes, particularly in high-current 20 A to 40 A output rails. The 110 nC typical total gate charge enables switching frequencies of 100 kHz to 250 kHz with acceptable drive losses. Place the MOSFET on the low-side of a buck converter with the tab connected to ground, using a synchronous rectifier controller IC to manage dead-time and prevent shoot-through.
تجویز کردہ
Battery Management System (BMS) High-Side Switch
In 24 V and 48 V battery management systems, the IRF3007STRLPBF serves as a high-side disconnect switch with low conduction loss. Its 75 V V(BR)DSS provides comfortable headroom above 48 V nominal battery stacks, while the 62 A continuous current rating handles peak discharge currents for e-mobility and stationary storage. The D2PAK package allows PCB-mount heatsinking for continuous 30 A operation. Use a dedicated high-side gate driver IC such as the IR2117PBF for floating supply generation to drive the gate above the battery voltage.
تجویز کردہ
Automotive 12 V/24 V Solenoid and Relay Driver
The IRF3007STRLPBF drives 12 V and 24 V automotive solenoids, relays, and high-current lamps in aftermarket and non-safety applications. Its 12.6 mΩ on-resistance and 62 A continuous current rating handle inductive kick from solenoids up to several amperes continuous. The 175 °C maximum junction temperature survives under-hood thermal stress. Note that this part is not AEC-Q101 qualified; for OEM automotive applications, select the AUIRF7640S2TR or similar AEC-Q101-qualified HEXFETs from Infineon's automotive portfolio instead.
تجویز کردہ
High-Current DC Load Switch
Use the IRF3007STRLPBF as a high-current DC load switch in industrial control panels and power distribution units. Its 62 A continuous rating and 75 V V(BR)DSS make it suitable for switching 24 V and 48 V DC buses powering resistive heaters, solenoids, and motor loads. The low on-resistance of 12.6 mΩ minimizes voltage drop across the switch, while the D2PAK package with its exposed tab provides excellent thermal dissipation. Drive the gate directly from a microcontroller GPIO through a 100 Ω gate resistor for simple on/off control.
تجویز کردہ
Power Tools and Cordless Equipment
The IRF3007STRLPBF is appropriate for cordless power tools and portable battery-powered equipment operating from 18 V to 36 V battery packs. Its 12.6 mΩ RDS(on) and 62 A continuous current handle peak motor currents of 30 A to 50 A common in drill and saw applications. The 175 °C junction temperature rating supports the harsh thermal cycling of intermittent high-current operation. Place the MOSFET as the low-side switch in the brushed or BLDC motor H-bridge, paired with an appropriate gate driver and current-sense amplifier for overload protection.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRF3007STRLPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFB3207ZPBF | IRFB4110PBF | IRFB3077PBF | IRFB3307ZPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Drain-to-Source Voltage V(BR)DSS | 75 V | 75 V | 100 V | 75 V | 75 V |
| Continuous Drain Current (Tc=25°C) | 62 A | 75 A | 120 A | 120 A | 130 A |
| RDS(on) typical at VGS=10V | 12.6 mΩ | 6.5 mΩ | 4.5 mΩ | 3.3 mΩ | 3.2 mΩ |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Total Gate Charge (Qg) | 110 nC typical | 120 nC | 160 nC | 190 nC | 180 nC |
| RoHS Compliance | Yes (Lead-Free, PBF) | Yes | Yes | Yes | Yes |
| Approximate Unit Price (qty-1000) | $0.92 | $1.10 | $1.65 | $1.85 | $1.45 |
اہم امتیازی خصوصیات
- Lower RDS(on) drop-in alternatives available with same D2PAK footprint (بمقابلہIRFB3207ZPBF)
- Higher voltage headroom option for 100 V bus systems (بمقابلہIRFB4110PBF)
- Lower conduction loss option for 75 V high-current designs (بمقابلہIRFB3077PBF)
ڈیزائن نوٹس
The IRF3007STRLPBF has a junction-to-case thermal resistance (RθJC) of 1.0 °C/W and junction-to-ambient (RθJA) of 40 °C/W. At 62 A continuous drain current with 30 V VDS (worst-case switching), conduction loss alone is approximately 48 W (I² × RDS(on) = 62² × 0.0126), far exceeding the 120 W package rating only if Tj reaches 175 °C. Estimated: at 48 W dissipation with RθJA = 40 °C/W, junction rises 1920 °C above ambient - clearly impractical. A heatsink limiting RθJA to under 2 °C/W is mandatory for continuous operation above 10 A. Always compute Tj = Ta + (Pd × RθJA) and keep Tj below 150 °C for long-term reliability.
The D2PAK tab is internally connected to the drain (pin 2). Solder the tab to a substantial PCB copper pour - ideally 1 oz copper covering at least 1 square inch on the top layer, plus thermal vias to inner copper planes - to minimize RθJA. For continuous currents above 20 A, supplement the PCB copper with a clip-on or bolt-down heatsink using thermal interface material. Keep the gate-drive trace short (under 25 mm) and use a 10 Ω to 100 Ω gate resistor to dampen parasitic ringing between gate-drain capacitance and source-lead inductance.
Do not operate the IRF3007STRLPBF with VGS below 6 V - partial enhancement increases RDS(on) dramatically and can cause thermal runaway. Ensure the gate-drive voltage reaches 10 V minimum at the gate pin, accounting for any voltage drop across the gate resistor during turn-on. Avoid exceeding the avalanche energy rating during inductive switching - add a flyback diode or TVS clamp across inductive loads. Finally, verify that the drain-to-source voltage stays below 60 V (80% derating) under all transient conditions, including load-dump and reverse-battery events in automotive environments.
تعمیل کی معلومات
RoHS compliant per Infineon product page - 'PBF' suffix indicates lead-free (Pb-free) termination. Lead-free and halogen-free per Infineon material declaration. Conflict-minerals compliant per Infineon supply chain policy. NOT AEC-Q100/AEC-Q101 qualified - use AUIRF7640S2TR or similar automotive-grade parts for OEM automotive applications.
