BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon
MPN: BSC054N04NSGATMA1 ✓ فعالBSC054N04NSGATMA1 جائزہ
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses a gate voltage to modulate conduction between source and drain. MOSFETs belong to the discrete semiconductor family and are a sub-category of transistors, sitting in the power management and switching converter ecosystem. The OptiMOS 3 family is Infineon's third-generation 40V trench MOSFET platform, positioned between discrete FETs and integrated gate drivers in the power-electronics component hierarchy.
Key features include an ultra-low on-resistance of 5.4 mOhm max at VGS=10V, low gate charge Qg for fast switching, and an integrated gate ESD protection structure that improves handling robustness in manufacturing. The PG-TDSON-8-5 (SuperSO8 5x6 mm) package provides an exposed drain pad that doubles as a thermal pad, lowering thermal resistance and supporting the 81A pulsed-current rating. The part is qualified to JEDEC MSL1 standards and is RoHS compliant with lead-free reflow compatibility.
The OptiMOS 3 architecture uses an advanced trench cell design that minimizes the RDS(on) x Qg figure of merit, balancing conduction and switching losses. The SuperSO8 package uses wire-bond-free source-down technology on later revisions, but the BSC054N04NSGATMA1 uses standard bond-wire construction with a gull-wing lead frame. This combination yields excellent figure-of-merit performance for high-frequency DC-DC converter applications.
Typical applications include synchronous rectification in 12V buck converters for server and telecom point-of-load (POL) regulators, OR-ing and hot-swap circuits in 24V industrial bus systems, motor drive H-bridges for low-voltage brushed and brushless DC motors, and battery protection circuits in multi-cell Li-ion packs. The 40V rating provides ample margin above 19V max USB-PD voltages and 24V industrial rails.
When designing with this MOSFET, prioritize minimizing parasitic source-inductance by using short, wide copper pours on the source pads, and ensure the gate-drive voltage reaches at least 10V for full enhancement. A heatsink or substantial copper thermal pad area is required for continuous operation near the 81A pulsed rating.
This page synthesizes distributor pricing, drop-in OptiMOS 3 and competitor alternatives in the same PG-TDSON-8-5 footprint, and practical design notes not consolidated in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل BSC054N04NSGATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC054N04NSGATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), RoHS Status.
BSC059N04LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC035N04LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD038N06NF2SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC058N04NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTMFS4841NT1G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF8736TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC054N04NSGATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | BSC054N04NSGATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 81 A |
| Continuous Drain Current (ID) at Ta=25C | 17 A |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation at Tc=25C | 57 W |
| Power Dissipation at Ta=25C | 2.5 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C |
| پیکیج | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| RoHS اسٹیٹس | Compliant |
| Gate Drive Voltage (recommended) | 10 V |
| Lead-Free Reflow | Yes |
BSC054N04NSGATMA1 پن کنفیگریشن
| پن 1 | S — Source |
| پن 2 | S — Source |
| پن 3 | S — Source |
| پن 4 | G — Gate |
| پن 5 | D — Drain |
| پن 6 | D — Drain |
| پن 7 | D — Drain |
| پن 8 | D — Drain |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
BSC054N04NSGATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Synchronous Buck POL Converters, 24V Industrial Bus Hot-Swap and OR-ing, Battery Protection and BMS Switch, Low-Voltage Motor Drive H-Bridges, USB-PD and Type-C Sink Power Switch, Telecom 48V Rectifier and DC-DC Stage.
12V Synchronous Buck POL Converters
The BSC054N04NSGATMA1 is widely deployed as the low-side synchronous rectifier in multi-phase 12V point-of-load (POL) buck converters powering FPGAs, ASICs, and server processors. With RDS(on) of 5.4 mOhm at VGS=10V and low gate charge Qg, this MOSFET minimizes both conduction and switching losses, enabling switching frequencies from 300 kHz up to 1 MHz while keeping total FET losses below 2% of output power. The exposed drain pad of the PG-TDSON-8-5 package provides effective heat spreading on standard 4-layer server PCBs. Per Infineon's OptiMOS 3 family datasheet, this part is benchmarked for high-current VR applications.
تجویز کردہ
24V Industrial Bus Hot-Swap and OR-ing
In 24V industrial rack and bus systems, the BSC054N04NSGATMA1 serves as a hot-swap or OR-ing FET, where its 40V VDS rating provides ample margin above 24V nominal and 36V transient overvoltages. With continuous ID of 17A at ambient (Ta=25C) and 81A at case, the device can sustain inrush currents during board insertion without tripping upstream breakers. The 5.4 mOhm on-resistance limits steady-state conduction loss to 1.6W at 17A. According to Infineon's OptiMOS 3 family datasheet, the linear-mode operation capability and SOA support hot-swap ramp profiles typical of telecom and industrial Ethernet switches.
تجویز کردہ
Battery Protection and BMS Switch
Multi-cell Li-ion battery management systems (BMS) use the BSC054N04NSGATMA1 as a low-side disconnect switch in 4S-10S packs with nominal 12-36V bus voltages. The 40V rating covers fully-charged 10S pack voltages (42V max) with derating margin. The 5.4 mOhm RDS(on) at VGS=10V minimizes discharge-path voltage drop, preserving battery runtime. Per the manufacturer datasheet, the part's low-leakage characteristics and 150C junction temperature rating suit the thermal envelope of sealed battery packs.
تجویز کردہ
Low-Voltage Motor Drive H-Bridges
For 12-24V brushed DC and small brushless DC motor drives, the BSC054N04NSGATMA1 is used in H-bridge low-side or high-side positions where 17A continuous Ta and 81A Tc ratings handle motor stall currents up to 50A. The PG-TDSON-8-5 footprint allows compact PCB integration in robotic actuators, e-bike controllers, and drone ESCs. Per Infineon's OptiMOS 3 family datasheet, the trench technology provides robust avalanche capability needed for motor inductive kickback during PWM switching transitions.
تجویز کردہ
USB-PD and Type-C Sink Power Switch
Modern USB-PD 3.1 sinks use the BSC054N04NSGATMA1 as the input protection and load switch for 15V-20V-28V negotiated bus voltages. The 40V VDS rating provides headroom above the maximum 28V USB-PD EPR voltage. With 5.4 mOhm on-resistance, conduction loss at 5A PD load is only 0.13W, supporting thermally-constrained laptop and tablet designs. The exposed thermal pad of the PG-TDSON-8-5 package routes heat directly to inner PCB copper layers.
تجویز کردہ
Telecom 48V Rectifier and DC-DC Stage
Telecom systems use the BSC054N04NSGATMA1 in the intermediate 40V DC-DC conversion stage between 48V bus and lower-voltage rails. Although rated at 40V, it is commonly used in 36V-38V clamped configurations. The 81A pulsed drain current capability supports paralleled configurations delivering 100A+ aggregate current. According to the manufacturer datasheet, the avalanche rating supports transient protection during hot-swap events on telecom backplanes.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC054N04NSGATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC059N04LSGATMA1 | BSC035N04LSGATMA1 | IPD038N06NF2SATMA1 | ISC058N04NM5ATMA1 | NTMFS4841NT1G | IRF8736TRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | SO-8FL - footprint-compatible | PG-TDSON-8 (micro-8) - same family |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 40 V | 30 V |
| RDS(on) max at VGS=10V | 5.4 mOhm | 5.9 mOhm | 3.5 mOhm | 3.8 mOhm | 5.8 mOhm | 5.0 mOhm | 4.1 mOhm |
| Continuous Drain Current (Tc=25C) | 81 A | 76 A | 100 A | 90 A | 78 A | 85 A | 85 A |
| Continuous Drain Current (Ta=25C) | 17 A | 16 A | 20 A | 20 A | 16 A | 18 A | 17 A |
| Technology | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 2 | OptiMOS 5 | onsemi Trench | StrongIRFET |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Price (qty=1000) | $0.51 | $0.55 | $0.78 | $0.65 | $0.58 | $0.62 | $0.48 |
اہم امتیازی خصوصیات
- Lowest RDS(on) in Infineon 40V OptiMOS 3 PG-TDSON-8-5 family (بمقابلہBSC059N04LSGATMA1)
- Mature OptiMOS 3 generation with broad distributor stock (بمقابلہIPD038N06NF2SATMA1)
- Higher current rating than competing 40V parts (بمقابلہIRF8736TRPBF)
ڈیزائن نوٹس
Estimated: at 17A continuous drain current in still air, the BSC054N04NSGATMA1 dissipates approximately 1.6W (I^2 x RDS(on) = 17^2 x 0.0054) and requires a copper pad of at least 1 square inch to maintain junction temperature below 100C. For 81A pulsed operation, the case-rated 57W power dissipation demands a thermal pad layout with at least 4-layer 2oz copper pours directly under the exposed drain pad. Without thermal management, junction temperature can exceed 150C and trigger thermal shutdown or device failure.
Minimize source-inductance in the gate-drive loop by placing the gate driver physically within 5 mm of pin 4 (G), and using a wide, short return path on the source pads (pins 1-3). The exposed drain pad should be soldered to a copper pour with a minimum of 6 thermal vias (0.3 mm diameter) connecting to inner ground/power planes. According to Infineon's OptiMOS 3 family datasheet and application notes, parasitic source inductance exceeding 1 nH can cause gate-drive ringing that reduces efficiency and may exceed VGS maximum.
Do not exceed VGS of +/-20V; use a dedicated gate-drive supply of 10V for full enhancement and minimal RDS(on). For half-bridge configurations, add a gate-source resistor (typically 10 kOhm) on each FET to prevent accidental turn-on during the dead-time window when the drain-source voltage dV/dt can capacitively couple to the gate. Verify body-diode reverse recovery performance (Qrr) at the application switching frequency - the BSC054N04NSGATMA1 is optimized for hard-switching topologies.
Switching-node dv/dt on this part can exceed 5 V/ns, requiring careful snubber design in motor-drive and hot-swap applications. Place an RC snubber (typically 4.7 ohm + 1 nF) across the drain-source terminals when the part operates in avalanche mode during turn-off. For EMI-sensitive applications, gate-drive resistors of 10-22 ohm balance switching loss against ringing; lower values increase EMI but reduce switching loss by approximately 15%.
تعمیل کی معلومات
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified - use automotive-grade OptiMOS variants (BSC... series with -Q1 suffix) for automotive applications. MSL1 rated per JEDEC J-STD-020.
