BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: BSZ011NE2LS5IATMA1 ✓ فعالBSZ011NE2LS5IATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power-conversion circuits. Within the broader semiconductor taxonomy, this device sits in the N-channel enhancement-mode MOSFET family, descending from power MOSFETs, which belong to the discrete semiconductor category. Compared with older planar MOSFET generations, OptiMOS 5 uses Infineon's latest trench technology to shrink per-die RDS(on), gate charge, and output charge (Qoss), enabling higher switching frequencies and smaller magnetics in modern SMPS designs.
Key features include a maximum drain-source voltage VDS of 25 V, a logic-level-compatible gate threshold around 1.0-1.7 V (VGS(th) typical), gate drive from 4.5 V to 10 V, and a maximum power dissipation of 69 W at TC=25°C. The PQFN 3.3x3.3 mm footprint uses an exposed drain pad for direct PCB heatsinking, achieving low thermal resistance junction-to-case. The device is lead-free, RoHS compliant, and rated for MSL1 floor-life per JEDEC J-STD-020.
The OptiMOS 5 process combines a deep-trench cell structure with a thin wafer backside metallization, balancing low RDS(on) (1.1 mΩ) with optimized switching figures of merit (FOM = RDS(on) × Qg). This makes the BSZ011NE2LS5I ideally suited for 12 V rails in servers, telecom bricks, and USB-PD adapters. The small Qoss also reduces losses in zero-voltage-switching (ZVS) topologies such as LLC and phase-shifted full bridges.
Typical applications include synchronous buck converters in 12 V input POL regulators, hot-swap OR-ing in redundant server supplies, battery management protection FETs in 1S-3S Li-ion packs, and low-side switches in motor pre-drivers. Compared with D-pak alternatives, the PQFN 3.3x3.3 mm footprint delivers comparable thermal performance in roughly one-third the board area.
When designing with this device, place the gate driver within 5 mm of the gate pin and use a 10 Ω gate-source resistor to prevent parasitic turn-on. Ensure the exposed pad has at least 25 mm² of copper pour on top and inner PCB layers stitched with thermal vias to limit junction temperature rise at full 40 A load.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB layout guidance not consolidated in the manufacturer datasheet, giving power designers an actionable one-stop engineering reference.
کے لیے ڈراپ اِن متبادل BSZ011NE2LS5IATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSZ011NE2LS5IATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
BSC015NE2LS5IATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC010NE2LSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ070N08LS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC050NE2LSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC052N08NS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD082N10N3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ011NE2LS5IATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at TA=25°C | 35 A |
| Continuous Drain Current (ID) at TC=25°C | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | 2.1 W |
| Power Dissipation at TC=25°C | 69 W |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V |
| آپریٹنگ درجہ حرارت رینج | -55°C to +150°C |
| پیکیج | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | MSL1 (per JEDEC J-STD-020) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| ہیلوجن فری | Yes |
BSZ011NE2LS5IATMA1 پن کنفیگریشن
| پن 1 | S — Source (low-side connection) |
| پن 2 | S — Source (low-side connection) |
| پن 3 | S — Source (low-side connection) |
| پن 4 | G — Gate (PWM control input) |
| پن 5 | S — Source (low-side connection) |
| پن 6 | S — Source (low-side connection) |
| پن 7 | S — Source (low-side connection) |
| پن 8 | S — Source (low-side connection) |
| پن EP | D — Drain (exposed pad - heat sink and high-side connection) |
محفوظ آپریٹنگ ایریا (DC, TC=25°C)
عام استعمالات
BSZ011NE2LS5IATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Synchronous Buck Converter Low-Side FET, Hot-Swap and OR-ing FET for Redundant 12V Rails, 1S-3S Li-ion Battery Protection MOSFET, USB Power Delivery Sink Switch, Motor Drive Low-Side Switch (BLDC/PMSM), Point-of-Load (POL) Voltage Regulator Synchronous Stage.
12V Synchronous Buck Converter Low-Side FET
The BSZ011NE2LS5IATMA1 is ideal as the low-side synchronous rectifier in 12 V input, 1.0-3.3 V output buck converters for server and telecom POL rails. Its 1.1 mΩ typical RDS(on) at VGS=10 V minimizes conduction loss during the freewheeling phase, while its small Qoss (under 30 nC typical) keeps dead-time losses below 1 W at 500 kHz switching frequency. Compared with D-pak MOSFETs, the PQFN 3.3x3.3 mm footprint saves roughly 70% board area while delivering equivalent thermal performance when the exposed drain pad is soldered to a 25 mm² copper pour.
تجویز کردہ
Hot-Swap and OR-ing FET for Redundant 12V Rails
The BSZ011NE2LS5IATMA1 serves as the series protection or OR-ing MOSFET in 12 V redundant power architectures such as server CRPS supplies and telecom -48 V intermediate bus converters. Its 1.1 mΩ on-resistance at VGS=10 V produces only 110 mW of conduction loss per ampere, keeping the PCB cool under 30 A continuous load. The 25 V VDS rating provides ample transient margin against inductive kick-back when downstream capacitors are hot-plugged. Pair with a hot-swap controller such as the LM5069 or TPS2490 to manage inrush dV/dt and fault isolation.
تجویز کردہ
1S-3S Li-ion Battery Protection MOSFET
For 1S to 3S Li-ion battery packs in power tools, e-bikes, and portable medical devices, the BSZ011NE2LS5IATMA1 provides the high-side or low-side disconnect FET with 25 V VDS headroom over a fully-charged 12.6 V (3S) pack. Its 1.1 mΩ RDS(on) at VGS=10 V minimizes voltage drop during peak discharge (10-20 A typical), preserving battery runtime. The PQFN 3.3x3.3 mm package fits inside the battery management board alongside the gas gauge IC. Note that for very high current e-bike packs (30 A+), designers should consider the larger 5x6 mm PG-TDSON package family for thermal headroom.
تجویز کردہ
USB Power Delivery Sink Switch
The BSZ011NE2LS5IATMA1 functions as the high-side load switch in USB Power Delivery (PD) sink applications where the 5-20 V VBUS rail must be controlled and protected. Its 25 V VDS rating handles 20 V PD profiles with margin, while the 1.1 mΩ RDS(on) minimizes voltage drop at 5 A (100 W) PD3.1 Extended Power Range. The fast switching capability supports PWM-based current limiting. Place a TVS diode such as SMAJ24CA across VBUS to clamp ESD transients that exceed the 25 V absolute maximum rating.
تجویز کردہ
Motor Drive Low-Side Switch (BLDC/PMSM)
As the low-side switch in a 3-phase brushless DC (BLDC) or permanent magnet synchronous motor (PMSM) inverter for fans, pumps, and small e-mobility, the BSZ011NE2LS5IATMA1 handles 25 V motor rails up to 30 A continuous per phase. Its low RDS(on) reduces I²R losses during the active switching phase, while the PQFN 3.3x3.3 mm footprint allows integration directly onto the gate driver PCB. For drives above 1 kW, parallel multiple BSZ011NE2LS5I devices or upgrade to the larger 5x6 mm PG-TDSON family with lower thermal resistance.
تجویز کردہ
Point-of-Load (POL) Voltage Regulator Synchronous Stage
In multi-rail POL designs for FPGAs, ASICs, and high-current microprocessors, the BSZ011NE2LS5IATMA1 is the synchronous rectifier that returns inductor current to ground during the off-time. Its 1.1 mΩ RDS(on) directly translates to higher converter efficiency at 20-30 A loads, reducing heatsinking requirements on the POL module. Combined with a digital PWM controller operating at 500 kHz to 1 MHz, this MOSFET enables >93% peak efficiency at 12 V input to 1.0 V output conversion. The exposed drain pad allows direct PCB heatsinking through thermal vias to inner copper planes.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSZ011NE2LS5IATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC015NE2LS5IATMA1 | BSC010NE2LSIATMA1 | BSZ070N08LS5ATMA1 | BSC050NE2LSATMA1 |
|---|---|---|---|---|---|
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3) | PG-TSDSON-8-34 (PQFN 3.3x3.3) - same | PG-TSDSON-8-34 (PQFN 3.3x3.3) - same | PG-TSDSON-8-34 (PQFN 3.3x3.3) - same | PG-TSDSON-8-34 (PQFN 3.3x3.3) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 80 V | 25 V |
| RDS(on) typical at VGS=10V | 1.1 mΩ | 1.5 mΩ | 1.0 mΩ | 7.0 mΩ | 5.0 mΩ |
| Continuous Drain Current (TC=25°C) | 40 A | 30 A | 40 A | 12 A | 16 A |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) |
| Power Dissipation (TC=25°C) | 69 W | 57 W | 69 W | 52 W | 50 W |
| Approx. Unit Price (qty 1000) | $0.64 | $0.55 | $0.85 | $0.48 | $0.42 |
اہم امتیازی خصوصیات
- Industry-leading 1.1 mΩ RDS(on) in PQFN 3.3x3.3 mm (بمقابلہBSC015NE2LS5IATMA1)
- 25V VDS optimized for 12V adapter and battery applications (بمقابلہBSZ070N08LS5ATMA1)
- OptiMOS 5 trench technology with low Qg and Qoss (بمقابلہBSC050NE2LSATMA1)
ڈیزائن نوٹس
Estimated: At 12V input, 1.0V output, 30A continuous load with the BSZ011NE2LS5IATMA1 as low-side synchronous FET, the device dissipates roughly I²R = 30² × 0.0011 = 0.99 W assuming worst-case RDS(on) at junction temperature. The PG-TSDSON-8-34 package has a typical theta_JA of 50°C/W on a 1 oz 25 mm² copper pour, producing a 50°C junction temperature rise above ambient. For 35-40 A peak loads, expand the drain-pad copper to 50 mm² or add a topside copper flood stitched with 0.3 mm thermal vias on a 1.2 mm pitch to keep Tj below 125°C.
Solder the exposed drain pad directly to a top-layer copper pour of at least 25 mm². Place at least 9 thermal vias (0.3 mm drill, 0.6 mm pad) on a 1.2 mm pitch under the pad, connecting to inner-layer copper planes for spreading heat. Use a 4-layer stackup with 1 oz copper on each layer for optimal thermal performance. Avoid routing high-current drain traces on inner layers where thermal conductivity is lower than the top layer.
Do not exceed the 25V VDS absolute maximum rating - inductive kickback from a switching node can easily overshoot to 30-40V on poorly snubbed circuits. Add a 10V unidirectional TVS (such as SMAJ10A) from gate to source if the gate driver can produce transients above ±20V. Source pins (1, 2, 3, 5, 6, 7, 8) must all be soldered to a single low-inductance ground plane to avoid source-bounce-induced false turn-on. Use a 10Ω gate-source resistor to bleed off residual charge during the off state.
تعمیل کی معلومات
RoHS and REACH compliance per Infineon product page. MSL1 rated per JEDEC J-STD-020. Not AEC-Q100 qualified - for automotive applications select an AEC-Q100 variant from the Infineon OptiMOS 5 automotive portfolio.
