IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
MPN: IPD082N10N3GATMA1 ✓ فعالIPD082N10N3GATMA1 جائزہ
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of an n-type epitaxial layer under the gate oxide to form a conducting channel between drain and source. Within the broader semiconductor taxonomy, the part belongs to the discrete MOSFET family, which itself sits inside the power-transistor category of discrete semiconductors. Infineon's OptiMOS family is the company's flagship 40 V-300 V trench MOSFET line, optimized to minimize both on-state resistance (RDS(on)) per unit silicon area and figure-of-merit (RDS(on) × Qg), reducing both conduction loss and gate-drive loss versus planar MOSFET generations.
Key features include 100 V drain-source breakdown voltage, 80 A continuous drain current at case temperature 25°C, maximum RDS(on) of 8.2 mΩ at VGS=10 V, low gate charge Qg for fast switching transitions, an avalanche-rated single-pulse body diode, and a low thermal-resistance DPAK surface-mount footprint. The device is RoHS compliant and characterized for -55°C to +175°C junction temperature operation.
OptiMOS 3 technology uses a deep-trench cell geometry combined with a thin epitaxial layer to shrink the per-cell pitch and increase channel density, yielding approximately 30% lower RDS(on) and FOM versus the prior OptiMOS 2 generation. This translates directly into cooler-running converters, smaller magnetics, and the ability to push switching frequencies higher without efficiency penalty - critical for telecom bricks, server VRMs, and solar micro-inverters.
Typical applications include primary-side and synchronous-rectification stages in 48 V telecom and server SMPS, e-bike and low-voltage EV motor controllers, Class-D audio amplifier output stages, solar MPPT boost and buck converters, and battery protection MOSFETs in 48 V e-mobility packs. The wide VDS rating also makes it suitable as a load switch and hot-swap controller in industrial 24 V and 48 V backplanes.
Design considerations include keeping the gate drive loop area minimal to suppress ringing, placing the gate-source pull-down resistor (typically 10 kΩ) close to the IC, ensuring the heat-sink tab area exceeds 1 cm² of copper pour with thermal vias, and observing the safe operating area (SOA) at high VDS and pulsed-drain-current combinations. The -Q suffix variant is AEC-Q101 qualified for automotive use; this GATMA1 part is industrial/consumer grade.
This page synthesizes live distributor pricing, drop-in cross-brand equivalents from parametric cross-reference tools, and practical design guidance not consolidated in any single datasheet or distributor listing - giving procurement and design engineers a one-stop decision resource for the IPD082N10N3GATMA1.
کے لیے ڈراپ اِن متبادل IPD082N10N3GATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD082N10N3GATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, MSL Level, Product Family.
IPD12CN10NGBUMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC076N06NS3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0901NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0902NSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0906NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD082N10N3GATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Part Number | IPD082N10N3GATMA1 |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ |
| Power Dissipation (PD) @ Tc=25°C | 125 W |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C |
| پیکیج / کیس | PG-TO252-3 (DPAK), surface mount |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 3 (Gate, Drain, Source) |
| RoHS اسٹیٹس | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) |
| Lead-Free | Yes |
| MSL لیول | 1 (per JEDEC J-STD-020) |
IPD082N10N3GATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; apply VGS=10 V to fully enhance the channel |
| پن 2 | Drain — Drain terminal; high-voltage switching node, also electrically bonded to the DPAK tab |
| پن 3 | Source — Source terminal; reference for gate drive; return path for load current |
| پن Tab | Drain — Metal tab electrically connected to pin 2 (Drain); provides thermal path and main high-current connection |
محفوظ آپریٹنگ ایریا (DC, Tj=25°C)
عام استعمالات
IPD082N10N3GATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Synchronous Rectification in Telecom SMPS, E-bike / Low-Voltage EV Motor Drive, Class-D Audio Amplifier Output Stage, Solar MPPT Boost Converter Power Stage, 48 V Battery Pack Protection MOSFET, Industrial 24 V-72 V Hot-Swap / Load Switch.
48 V Synchronous Rectification in Telecom SMPS
The IPD082N10N3GATMA1 sits in the secondary-side synchronous-rectifier position of an isolated 48 V telecom DC-DC brick, where the 100 V VDS rating provides 2x headroom above 48 V nominal and ample margin for transient spikes on the rectifier nodes. The 8.2 mΩ RDS(on) drops conduction loss versus a Schottky-diode rectifier stage - at 30 A output, the IRMS is roughly 18-22 A and the MOSFET loss is ~3-4 W versus 6-8 W for an equivalent diode bridge, lifting system efficiency by 1-2 percentage points. The 125 W PD rating and DPAK thermal pad support a 50 A continuous secondary without forced airflow. Use a UCC24612 or similar SR controller to drive the gate, and add a 10 kΩ gate-source pull-down to prevent spurious turn-on during the primary-side switching transition.
تجویز کردہ
E-bike / Low-Voltage EV Motor Drive
In a 36 V or 48 V e-bike hub-motor or low-voltage EV inverter, the IPD082N10N3GATMA1 is used as the low-side switching element in a three-phase half-bridge. The 100 V VDS rating comfortably handles 48 V battery plus regenerative-kickback transients up to 80 V, while the 80 A continuous ID rating covers the 25-30 A RMS phase currents typical of 250-500 W motor systems. OptiMOS 3's low FOM (RDS(on) × Qg) keeps switching loss low at 20-50 kHz PWM frequencies, reducing heatsink mass and extending ride time. For automotive-grade variants on the same footprint, select the AEC-Q101 qualified IPD082N10N3 G -Q suffix; this industrial-grade part is suitable for non-automotive e-bike and light-mobility applications.
تجویز کردہ
Class-D Audio Amplifier Output Stage
The IPD082N10N3GATMA1 is a strong fit for the half-bridge output stage of a 200-500 W Class-D audio amplifier powered from a ±35 V or single 48 V rail. Its 8.2 mΩ RDS(on) minimizes voltage drop across the output device, preserving audio dynamic range, while the 100 V VDS rating allows direct connection to a 48 V rail with full avalanche headroom for back-EMF from reactive loudspeaker loads. OptiMOS 3's fast body-diode recovery and low Qrr reduce dead-time distortion and crossover artifacts at 250-500 kHz PWM switching. Drive the gate with a dedicated Class-D controller such as the IRS2092 with bootstrap gate-drive supply. The DPAK tab can dissipate 30-40 W continuous with 4 sq-in of copper-pour heatsinking on a 2-oz PCB.
تجویز کردہ
Solar MPPT Boost Converter Power Stage
In a 1-3 kW residential solar MPPT boost converter stepping 20-60 V PV input up to a 400 V DC bus, the IPD082N10N3GATMA1 is placed as the high-side or low-side switching element in the boost stage. The 100 V VDS rating handles 60 V panel input plus ringing with margin, while the 80 A continuous ID rating supports 25-35 A continuous boost currents at full power. The low RDS(on) of 8.2 mΩ keeps conduction loss under 10 W at 35 A, and OptiMOS 3's low Qg enables 50-100 kHz switching with manageable gate-drive losses. The DPAK package provides a thermal pad for direct soldering to a copper-pour heatsink. Pair with a CoolSET or TL2843 current-mode controller and use a UCC27714 high-side gate driver for the high-side position.
تجویز کردہ
48 V Battery Pack Protection MOSFET
In a 48 V Li-ion or LiFePO4 battery pack for e-mobility and telecom backup, the IPD082N10N3GATMA1 serves as the high-side or low-side disconnect MOSFET that opens under fault conditions. The 100 V VDS rating is well above the 58 V max charge voltage of a 16S Li-ion pack, while the 80 A continuous ID supports 50-60 A continuous discharge and 200-300 A peak pulses with sufficient margin. Its 8.2 mΩ RDS(on) keeps the voltage drop during normal conduction under 0.5 V at 60 A, preserving usable battery capacity. The DPAK surface-mount package simplifies PCB assembly and supports a high-current PCB trace to the tab. Use a battery-management IC such as the TLE9012 or similar to control the gate, with an active current-limit circuit for short-circuit protection.
تجویز کردہ
Industrial 24 V-72 V Hot-Swap / Load Switch
As a hot-swap or eFuse element on a 24 V, 36 V, 48 V, or 72 V industrial backplane, the IPD082N10N3GATMA1 provides inrush-current limiting and disconnect under fault. The 100 V VDS rating handles 72 V nominal plus transient ringing, while the 80 A continuous ID rating supports a 30-40 A continuous load with substantial margin. The 8.2 mΩ RDS(on) produces only 0.3-0.4 V drop at 40 A, well within ATX-style 12 V tolerance and well below 48 V PoE voltage-regulation limits. Drive the gate from a hot-swap controller (e.g., LM5060 or similar) using constant-current charging to soft-start the load. The DPAK package handles the inrush surge energy when bolted onto a capacitive load bank.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD082N10N3GATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD12CN10NGBUMA1 | BSC076N06NS3GATMA1 | BSC0901NSATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage VDS | 100 V | 100 V - same | 60 V - lower (-40%) | 100 V - same |
| RDS(on) max @ VGS=10 V | 8.2 mΩ | 12 mΩ (+46%) | 7.6 mΩ (-7% better) | 9 mΩ (+10%) |
| Technology Family | OptiMOS 3 (Trench) | OptiMOS 3 (Trench) | OptiMOS 3 (Trench) | OptiMOS 3 (Trench) |
اہم امتیازی خصوصیات
- OptiMOS 3 trench technology with 30% lower RDS(on) versus prior generation (بمقابلہIRF520N (planar MOSFET, TO-220AB, ~200 mΩ RDS(on)))
- Best-in-class RDS(on) × FOM balance in 100 V DPAK OptiMOS 3 family (بمقابلہIPD12CN10NGBUMA1 (same family, 12 mΩ RDS(on)))
- Pin-compatible with multiple Infineon 100 V DPAK alternatives for sourcing flexibility (بمقابلہBSC076N06NS3GATMA1 (60 V VDS, 7.6 mΩ RDS(on)))
ڈیزائن نوٹس
The PG-TO252-3 (DPAK) tab is electrically bonded to the Drain pin and serves as the primary thermal path. Estimated: with a 1 sq-in copper-pour heatsink on a 2-oz FR-4 PCB and no forced airflow, RθJA is roughly 40-50 °C/W, allowing continuous dissipation of about 2-2.5 W at TA=25°C and 1-1.5 W at TA=85°C. For full 125 W (Tc=25°C) operation, a forced-air or attached heatsink is mandatory. Always solder the tab to a continuous copper pour with multiple thermal vias to the internal ground plane.
Recommended land pattern for PG-TO252-3 per Infineon's footprint IPC-7351: pad dimensions approximately 2.3 mm × 1.1 mm for the gate and source pads, with a 6.5 mm × 7.4 mm thermal pad under the tab. Use a minimum of 4 thermal vias (0.3 mm drill, 0.5 mm pitch) under the tab to the opposite-side ground plane. Place the gate drive loop area below 50 mm² to minimize switching ringing, and add a 10 kΩ gate-source pull-down resistor (placed within 5 mm of the gate pin) to prevent spurious turn-on during the high-side transition.
Common design pitfalls with the IPD082N10N3GATMA1: (1) exceeding VDS during avalanche - add an RC snubber (10 Ω + 1 nF) on the switching node if the ringing overshoots 80 V; (2) operating above the body-diode's reverse-recovery limit - this part is not optimized for hard-switched body-diode conduction; use a synchronous rectification controller with dead-time control; (3) neglecting the safe operating area at high VDS / high ID - do not operate continuously above the DC SOA curve; (4) mistaking the DPAK tab for an isolated thermal pad - it is electrically live at Drain potential and must be connected to the same node as pin 2.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Not AEC-Q100 or AEC-Q101 qualified (industrial/consumer grade); for automotive, select the AEC-Q101 qualified variant. MSL Level 1 per JEDEC J-STD-020.
