BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSZ150N10LS3GATMA1 ✓ فعالBSZ150N10LS3GATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that uses a gate field to modulate current flow between the source and drain terminals. N-channel enhancement-mode MOSFETs such as this part are the workhorse switching element in synchronous buck/boost converters, half-bridges, and full-bridges on the low-side position, where their low gate charge and low on-resistance translate directly into lower conduction and switching losses. Within the broader component hierarchy, MOSFETs sit under discrete semiconductors, then transistors, then power switches, and ultimately under the power-management umbrella of a complete electronic system.
Key differentiating features of the BSZ150N10LS3GATMA1 include 100 V drain-source voltage, 40 A continuous drain current, 15 mΩ maximum RDS(on) at VGS=10 V, an ultra-low on-resistance per unit area thanks to the OptiMOS 3 trench process, an exposed drain pad (PG-TSDSON-8) for very low thermal resistance, and a logic-level compatible gate threshold range. The part is also RoHS compliant and supports lead-free reflow profiles up to 260 °C peak.
From an architectural standpoint, the PG-TSDSON-8 (Power-TDFN) package places the silicon die on an exposed lead-frame paddle that doubles as the drain connection, so the entire bottom of the package acts as a thermal path to the PCB copper. This drastically shrinks the RthJA versus traditional SO-8 packages and enables the 63 W Tc rating in a footprint of only about 3.3 x 3.3 mm. The OptiMOS 3 cell structure also provides excellent body-diode ruggedness, which matters for synchronous-rectifier and bridge applications where the intrinsic diode carries current during dead-time.
Typical applications include high-frequency DC/DC converters, synchronous rectification in 48 V telecom and server power supplies, motor-drive H-bridges (12 V / 24 V / 48 V systems), battery management and protection FETs, hot-swap and e-fuse circuits, and Class-D audio amplifier output stages. The 100 V rating also makes it attractive for industrial 24 V/36 V bus converters where inductive voltage transients must be tolerated.
When designing with this MOSFET, pay close attention to gate-drive voltage: the OptiMOS 3 family is specified for 10 V VGS to reach its lowest RDS(on), and at 4.5 V VGS the on-resistance rises noticeably. Also plan thermal copper area under the exposed pad — the 2.1 W TA rating is only achievable with a properly designed PCB land pattern, and derate aggressively above 25 °C ambient.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet to help engineers select, source, and apply the BSZ150N10LS3GATMA1 with confidence.
کے لیے ڈراپ اِن متبادل BSZ150N10LS3GATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSZ150N10LS3GATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, Configuration, Part Family.
BSZ150N10LS3-G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSZ160N10NS3GATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSZ018NE2LSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC100N10NSFGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ130N03LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC123N08NS3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0906NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ110N08NS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ150N10LS3GATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 |
| Technology / Family | OptiMOS 3 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A |
| On-Resistance RDS(on) max | 15 mΩ |
| Power Dissipation (TA=25 °C) | 2.1 W |
| پاور ڈسپیشن (TC=25°C) | 63 W |
| پیکیج | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C |
| RoHS اسٹیٹس | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) |
BSZ150N10LS3GATMA1 پن کنفیگریشن
| پن 1 | S — Source (connected to source pad) |
| پن 2 | S — Source (connected to source pad) |
| پن 3 | S — Source (connected to source pad) |
| پن 4 | G — Gate |
| پن 5 | S — Source (connected to source pad) |
| پن 6 | S — Source (connected to source pad) |
| پن 7 | S — Source (connected to source pad) |
| پن 8 | D — Drain (exposed pad on bottom of package) |
محفوظ آپریٹنگ ایریا (DC, TJ=150 °C)
عام استعمالات
BSZ150N10LS3GATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Synchronous Rectifier, Motor Drive H-Bridge (24 V / 48 V), Hot-Swap / e-Fuse Controller Switch, Class-D Audio Amplifier Output Stage, Battery Management / Protection FET, Industrial 24 V/36 V DC/DC Converter.
48 V Synchronous Rectifier
The BSZ150N10LS3GATMA1 is well suited to 48 V secondary-side synchronous-rectifier stages in telecom and server SMPS, where its 100 V VDS rating provides comfortable headroom above 48 V plus inductive spikes, and its 15 mΩ maximum RDS(on) keeps conduction loss at 24 W at 40 A full load. Placed as the low-side MOSFET in a buck-derived half-bridge driven by an Infineon EiceDRIVER gate IC, the part delivers sub-100 ns switching transitions thanks to the OptiMOS 3 cell geometry. The PG-TSDSON-8 package keeps the power loop inductance low, reducing overshoot and EMI compared with larger SO-8 parts. The 63 W TC power dissipation figure allows continuous 20–25 A operation with proper PCB copper, which is the typical operating point of a 48 V-to-PoL intermediate bus converter.
تجویز کردہ
Motor Drive H-Bridge (24 V / 48 V)
The BSZ150N10LS3GATMA1 works as the low-side switch in 24 V or 48 V brushed-DC and PMSM motor H-bridges, where its 100 V rating tolerates regen transients and the 40 A continuous current supports motors in the 200–500 W mechanical output range. Its 15 mΩ RDS(on) minimizes conduction loss at high duty cycle, extending battery runtime in cordless tools and e-mobility platforms. The PG-TSDSON-8 footprint enables compact four-MOSFET bridges in roughly 80 mm² of board area, which is critical for handheld power tools. The exposed drain pad couples directly to inner-layer copper for sustained 20 A continuous operation without an external heatsink.
تجویز کردہ
Hot-Swap / e-Fuse Controller Switch
The BSZ150N10LS3GATMA1 functions as the pass/ProtectFET in 48 V hot-swap and electronic fuse circuits, where its 100 V VDS handles standard telecom bus voltages with margin and its 15 mΩ RDS(on) limits steady-state voltage drop to about 75 mV at 5 A. The 40 A pulsed current capability absorbs inrush transients when bulk capacitors charge. The PG-TSDSON-8 footprint allows a compact 3.3 x 3.3 mm solution that fits on SMD adapter cards and high-availability server backplanes. Designers should add a TVS clamp or active gate slew-rate control to keep VDS within the 100 V rating during hot-plug events.
تجویز کردہ
Class-D Audio Amplifier Output Stage
The BSZ150N10LS3GATMA1 is well matched to the output half-bridge of sub-100 V Class-D audio amplifiers, where its 15 mΩ RDS(on) and 40 A peak current deliver high efficiency (>90%) and low THD+N at 200–400 W output. The PG-TSDSON-8 package minimizes switching-loop inductance, which is critical for clean PWM edges and reduced EMI in audio-band applications. The exposed drain pad enables direct PCB heatsinking so the amplifier can deliver continuous power without an external heatsink. Designers should pair this part with a dedicated Class-D gate driver such as the IRS2092 family for self-oscillating or PWM-modulated topologies.
تجویز کردہ
Battery Management / Protection FET
The BSZ150N10LS3GATMA1 acts as the low-side protection FET in 48 V lithium-ion battery packs for e-bikes, light EVs, and stationary storage, where its 100 V VDS handles pack transients and its 15 mΩ RDS(on) limits continuous discharge loss to about 0.5% at 30 A. The 40 A current rating matches mid-power pack architectures in the 1–3 kWh range. The PG-TSDSON-8 footprint allows a compact BMS PCB layout with minimal trace resistance, critical for accurate coulomb counting. The part is specified for -55 °C to +150 °C junction, covering the full automotive and industrial temperature range.
تجویز کردہ
Industrial 24 V/36 V DC/DC Converter
The BSZ150N10LS3GATMA1 is ideal for industrial 24 V and 36 V bus DC/DC converters used in factory automation, robotics, and process control, where its 100 V VDS easily tolerates the 36 V nominal bus plus 50% transient over-voltage events defined in IEC 61131-2. The 15 mΩ RDS(on) and 40 A rating enable single-MOSFET synchronous stages at the 300–500 W power level. The PG-TSDSON-8 footprint allows a highly compact solution suitable for DIN-rail mounted power supplies where PCB area is at a premium. The exposed drain pad couples directly to a topside copper pour for natural convection cooling, eliminating the need for an external heatsink in most configurations.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSZ150N10LS3GATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSZ150N10LS3-G | BSZ160N10NS3GATMA1 | BSC100N10NSFGATMA1 | BSC123N08NS3GATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same |
| Technology / Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 |
| Drain-Source Voltage VDS | 100 V | 100 V | 100 V | 100 V | 80 V | 80 V |
| Continuous Drain Current ID (TC=25 °C) | 40 A | 40 A | 40 A | 40 A | 40 A | 40 A |
| On-Resistance RDS(on) max | 15 mΩ | 15 mΩ | 16 mΩ | 10 mΩ | 12.3 mΩ | 11 mΩ |
| Operating Temperature (TJ) | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C |
اہم امتیازی خصوصیات
- Lowest RDS(on) in its 100 V / PG-TSDSON-8 class (بمقابلہBSZ160N10NS3GATMA1)
- Higher voltage headroom than 80 V OptiMOS 5 parts (بمقابلہBSZ110N08NS5ATMA1)
- Mature OptiMOS 3 process with broad tooling support (بمقابلہBSC100N10NSFGATMA1 (OptiMOS 5))
ڈیزائن نوٹس
The 2.1 W TA dissipation rating assumes a 4-layer FR4 PCB with at least 1 oz copper and 1 square inch of drain-pad copper area. Estimated: at 1 W dissipation and a 50 °C ambient, the junction temperature rise above ambient is roughly RthJA * Pdiss, where RthJA is approximately 60 °C/W on a JEDEC EIA/JESD51 1-square-inch test board. For continuous 10+ A operation, extend the drain copper to multiple square inches and add thermal vias to inner layers. Without proper copper, the part will throttle or fail in a few minutes at full current.
Use a PG-TSDSON-8 land pattern that exposes the drain pad to a copper pour as large as thermal constraints allow. Stitch the exposed pad with a 3x3 array of 0.3 mm thermal vias to inner-layer copper. Keep the gate loop (gate driver output → gate resistor → gate pin → source pin → gate driver ground) under 5 mm total length to avoid gate ringing. The source pins should share a low-inductance connection to the gate-driver ground return, NOT the system power ground.
Do not assume the part can switch at full 40 A continuously at TA=25 °C — the 40 A rating is at TC=25 °C, which requires substantial copper. At TA=85 °C the continuous current derates to about 15 A on a typical 1-square-inch copper pour. Also avoid operating VGS above ±20 V absolute maximum; use a gate-source Zener or dedicated gate-driver clamp if the gate is exposed to high dV/dt transients. Finally, do not connect the gate to a high-impedance node when not driven, as the part can partially turn on from leakage and cause shoot-through.
تعمیل کی معلومات
RoHS and lead-free confirmed per Infineon product page and DigiKey listing. AEC-Q100 automotive qualification status was not confirmed in the verified web data — engineers should check the Infineon automotive-grade BSZ150N10LS3G variant if automotive qualification is required.
