IGLD60R070D1AUMA3 - 600V 70mΩ CoolGaN™ eMode GaN FET | Infineon
MPN: IGLD60R070D1AUMA3 ✓ فعالIGLD60R070D1AUMA3 جائزہ
A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch that conducts through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction, rather than through a doped silicon channel. Because GaN has a 3.4 eV bandgap (versus 1.1 eV for silicon) and a critical electric field roughly ten times higher than silicon, GaN transistors achieve dramatically lower Rds(on) × area figures of merit, faster switching edges, and smaller output charge (Qoss, Coss, Qrr) than comparable Si MOSFETs. Enhancement-mode GaN FETs use a proprietary cascode-free normally-off structure (here, a p-GaN gate) to deliver MOSFET-like gate drive simplicity without the lossy silicon cascode. Within the power-converter hierarchy, the GaN FET sits in the high-frequency switching stage of AC-DC, DC-DC, and PFC converters that ultimately reside inside industrial, telecom, and datacenter SMPS systems.
Key features include a 600 V drain-source rating, typical on-resistance of 70 mΩ at VGS=10 V, ultra-low Qrr approaching zero, very low gate charge (Qg), and a thermally efficient exposed-pad LSON-8 package. The combination enables 100 V/ns+ switching transitions, supporting converter switching frequencies in the 100 kHz–1 MHz range and shrinking magnetics by up to 5× versus 65 kHz Si-based designs.
Architecturally, the IGLD60R070D1 pairs the GaN die with a Kelvin-source pin in the LSON-8-1 package, eliminating common-source inductance that would otherwise slow switching and cause gate ringing. Process-wise, the die is fabricated on a silicon substrate with a GaN-on-Si epitaxial stack, integrating a Schottky-mode p-GaN gate for normally-off operation. Performance-wise, total gate charge is typically a few nC, allowing the device to be driven from a small isolated gate-driver such as the 1EDI30I12AF or EiceDriver family.
Typical applications include totem-pole PFC front ends, half-bridge and full-bridge LLC resonant converters for telecom/datacenter SMPS, high-frequency DC-DC bricks, USB-PD chargers and adapters, and industrial motor-drive auxiliary rails. The 600 V rating makes it well suited to 230 V AC rectified (≈325 V DC) or 380–400 V DC bus designs.
When designing with this part, keep the gate-drive loop (gate-driver → RG → gate, and gate-driver return → Kelvin source) as small as possible to exploit the full switching-speed benefit; a 5–10 Ω series gate resistor is typical. Use a half-bridge with proper dead-time control and an isolated gate driver with 4 V/–1 V drive levels for CoolGaN™ to avoid false turn-on.
This page synthesizes distributor pricing, drop-in CoolGaN™ alternatives, and practical layout guidance that go beyond the manufacturer datasheet's typical-application section.
کے لیے ڈراپ اِن متبادل IGLD60R070D1AUMA3 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IGLD60R070D1AUMA3 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, Drain-Source Voltage (VDS), Manufacturer, Mounting Type.
IGLD60R070D1AUMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGLD60R070D1AUMA2
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGT60R070D1E8220ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGLR70R200D2SXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IGLD60R070D1AUMA3 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc) | 15 A |
| Power Dissipation (PD, Tc) | 114 W |
| On-Resistance (RDS(on)) | 70 mΩ (typical, VGS = 10 V) |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) |
| پیکیج | PG-LSON-8-1 (LSON-8 with exposed pad) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 3 |
| ہیلوجن فری | Yes |
| RoHS اسٹیٹس | Compliant |
| Series | CoolGaN™ |
| Polarity | N-Channel |
| Packaging | Tape & Reel |
| Factory Pack Quantity | 3000 |
IGLD60R070D1AUMA3 پن کنفیگریشن
| پن 1 | Gate — Gate input (driven 0-10V relative to Kelvin source for CoolGaN™ eMode operation) |
| پن 2 | Kelvin Source — Kelvin-source connection for gate-driver return to suppress common-source inductance |
| پن 3 | Source — Power source terminal |
| پن 4 | NC / Drain sense — Not connected (per datasheet) or drain-sense auxiliary, verify against datasheet pinout diagram |
| پن 5 | Drain — Power drain terminal (also exposed pad) |
| پن 6 | Drain — Power drain terminal (also exposed pad) |
| پن 7 | Drain — Power drain terminal (also exposed pad) |
| پن 8 | Drain — Power drain terminal (also exposed pad, primary thermal path) |
عام استعمالات
IGLD60R070D1AUMA3 کے لیے موزوں ہے 6 ایپلیکیشنs: Totem-Pole PFC Front End, Half-Bridge LLC Resonant Converter, USB-PD Charger / Adapter, Datacenter 48 V DC-DC Brick, Industrial SMPS (3-Phase Input), Solar / Energy Storage Inverter.
Totem-Pole PFC Front End
The IGLD60R070D1AUMA3 fits totem-pole bridgeless PFC front ends operating from a 230 VAC rectified ≈325 VDC bus where its 600 V VDS rating provides substantial derating margin and near-zero Qrr eliminates the reverse-recovery losses that cripple Si MOSFETs at high dV/dt. The 70 mΩ RDS(on) at 15 A continuous delivers 1-3 kW power levels with conduction losses under 1.5% at full load, while the CoolGaN™ 100 V/ns+ switching transitions shrink the boost inductor by 2-3× versus 65 kHz Si designs. Placed as the slow leg with a pair of Si or SiC diodes (or two GaN FETs for full-bridge CCM), this part achieves >99% PFC efficiency at 200 kHz-1 MHz. Use an isolated gate driver such as 1EDN7116GXTMA1 (Site MPN list) with 4 V/-1 V drive levels to avoid p-GaN gate overstress.
تجویز کردہ
Half-Bridge LLC Resonant Converter
In telecom and datacenter SMPS half-bridge LLC stages running at 200 kHz-1 MHz, the IGLD60R070D1AUMA3's 600 V/70 mΩ rating and ultra-low Qoss reduce circulating energy in the resonant tank, allowing higher gain-bandwidth and smaller resonant inductors. The CoolGaN™ device's near-zero Qrr is particularly valuable in LLC topologies that hard-switch off the secondary rectifier and benefit from minimal dead-time induced losses. At 1-2 kW per phase, two GaN FETs per half-bridge deliver 97-98% peak efficiency and shrink the magnetic assembly by up to 5× versus 65 kHz Si designs. Place the Kelvin-source pin adjacent to the gate-driver return to suppress common-source inductance and prevent gate-ringing above 1 MHz.
تجویز کردہ
USB-PD Charger / Adapter
The IGLD60R070D1AUMA3 enables compact 100-240 VAC input USB-Power-Delivery chargers in the 65-240 W range by operating the primary-side PFC and flyback/half-bridge stages at 200 kHz-1 MHz. Its 600 V rating covers universal mains with margin, while the 70 mΩ RDS(on) and 15 A capability support continuous primary currents typical of a 100 W+ adapter. CoolGaN™ enables the smallest adapter form factors (sub-100 W/in³ power density) and reduces BOM count by combining PFC and DC-DC stages on a single GaN half-bridge. Use synchronous rectification on the secondary with a 60 V GaN or Si MOSFET such as BSC050N04LSGATMA1 (Site MPN list) for highest efficiency.
تجویز کردہ
Datacenter 48 V DC-DC Brick
In 48 V intermediate-bus DC-DC bricks for hyperscale datacenters, the IGLD60R070D1AUMA3's CoolGaN™ switching performance enables 1-2 MHz operation with sub-100 W/in³ power density, converting 48 V to a regulated intermediate bus (typically 12 V or 6 V) with 97%+ peak efficiency. While its 600 V rating is overkill at this bus voltage, the same CoolGaN™ family and package are leveraged for design reuse; if the brick operates from a 400 V intermediate bus, the IGLD60R070D1AUMA3 sits naturally as the primary-side switch. Pair with the 2EDR8258XXUMA1 (Site MPN list) gate driver and XDPE12284C0000XUMA1 (Site MPN list) digital controller for a complete solution.
تجویز کردہ
Industrial SMPS (3-Phase Input)
Industrial 3-phase 380-480 VAC rectified SMPS designs run on 540-680 VDC buses where the IGLD60R070D1AUMA3's 600 V VDS is at the edge but the CoolGaN™ die's high breakdown robustness enables reliable operation with adequate snubbing and derating. The part delivers high-frequency switching at 100-300 kHz, shrinking the bulk DC-link capacitors and EMI filter magnetics by 3-5× versus 20 kHz Si IGBT designs. Used in industrial motor-drive auxiliary rails, welding inverters, and induction-heating front ends, the IGLD60R070D1AUMA3 enables >98% efficiency at 5-10 kW power levels with liquid or forced-air cooling.
تجویز کردہ
Solar / Energy Storage Inverter
In grid-tied solar inverters and battery energy storage systems (BESS) running from a 600-1000 VDC PV bus or a stacked battery string, the IGLD60R070D1AUMA3's 600 V rating is leveraged at the lower-voltage stage (boost PFC to 400 VDC bus) or in cascaded topologies where multiple CoolGaN™ devices in series handle higher voltages. The part's low RDS(on) × area reduces conduction losses during peak solar harvest periods, while CoolGaN™ switching at 100+ kHz shrinks the LCL filter and boost inductor for higher power density. The exposed-pad LSON-8-1 package simplifies PCB thermal design via direct copper-bond cooling.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IGLD60R070D1AUMA3 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IGLD60R070D1AUMA1 | IGLD60R070D1AUMA2 | IGT60R070D1E8220ATMA1 | IGLR70R200D2SXUMA1 | ISC015N06NM5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-LSON-8-1 (LSON-8 with exposed pad) | PG-LSON-8-1 (same) | PG-LSON-8-1 (same) | PG-HSOF-8-3 (top-cooled, different thermal) | PG-LSON-8-1 (same) | PG-LSON-8-1 (same) | PG-LSON-8-1 (same) |
| Technology | CoolGaN™ eMode GaN HEMT | CoolGaN™ eMode GaN HEMT (same) | CoolGaN™ eMode GaN HEMT (same) | CoolGaN™ eMode GaN HEMT (same) | CoolGaN™ eMode GaN HEMT (same) | Silicon MOSFET (different) | Silicon MOSFET (different) |
| Drain-Source Voltage (VDS) | 600 V | 600 V (same) | 600 V (same) | 600 V (same) | 600 V (same) | 60 V (-90%) | 40 V (-93%) |
| On-Resistance (RDS(on)) | 70 mΩ | 70 mΩ (same) | 70 mΩ (same) | 70 mΩ (same) | 200 mΩ (+185%) | 1.5 mΩ (different VDS class) | 7.6 mΩ (different VDS class) |
| Series / Family | CoolGaN™ 600 V discrete | CoolGaN™ 600 V discrete (same) | CoolGaN™ 600 V discrete (same) | CoolGaN™ 600 V top-cooled | CoolGaN™ 600 V discrete | OptiMOS™ 5 60 V | OptiMOS™ 40 V |
| RoHS / Halogen Free | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes | RoHS Compliant / Halogen Free Yes |
اہم امتیازی خصوصیات
- CoolGaN™ normally-off enhancement-mode structure (بمقابلہBSC076N04NDATMA1 (Si MOSFET))
- Higher VDS rating at similar RDS(on) than Si MOSFETs in same footprint (بمقابلہISC015N06NM5ATMA1 (60 V Si MOSFET))
- Same die in multiple reel/pack code variants (بمقابلہIGLD60R070D1AUMA1, IGLD60R070D1AUMA2)
ڈیزائن نوٹس
CoolGaN™ devices switch at 100 V/ns or more, so the gate-drive loop (gate-driver output → external gate resistor → gate pin → die → Kelvin-source pin → gate-driver ground) MUST be minimized to <5 nH total loop inductance. Estimated: at 100 V/ns, 5 nH produces 0.5 V of gate-ringing that can cross the p-GaN gate threshold and cause shoot-through. Use a 4-layer PCB with the gate-driver placed within 5 mm of the LSON-8-1 Kelvin-source pin and route the gate and Kelvin-source traces as a tightly coupled differential pair directly above an unbroken ground plane. The exposed drain pad should be soldered to a copper pour of at least 25 mm² on each layer for thermal spreading.
At VIN=400 V, ID=10 A continuous, with RDS(on)=70 mΩ, conduction losses alone are ~7 W. Estimated junction-to-ambient thermal resistance for PG-LSON-8-1 on a 4-layer 1 oz/0.5 oz PCB with 50 mm² copper pour is ~30-40 C/W, producing a junction temperature rise of 200-280 C above 25 C ambient - which exceeds the 150 C Tj max. A heatsink or 100+ mm² copper spreader on the drain pad is mandatory for continuous high-current operation. For top-cooled alternatives, the IGT60R070D1E8220ATMA1 (PG-HSOF-8-3) shifts the thermal path to a top-side cooler and improves dissipation by ~30%.
Do not exceed VGS = ±18 V absolute maximum on CoolGaN™ enhancement-mode devices; typical recommended drive is 0 V (off) to +6 V or +10 V (on). Using a Si MOSFET gate driver with +12 V or +15 V outputs can degrade or destroy the p-GaN gate over time. Use a CoolGaN™-qualified isolated gate driver such as 1EDN7116GXTMA1, 2EDN7534RXTMA1, or 1ED020I12B2XUMA1 (all on Site MPN list) that provide +6 V/+10 V gate levels. Also verify dead-time control in half-bridge designs: 50-200 ns is typical; insufficient dead-time causes shoot-through, excessive dead-time hurts efficiency at light load.
CoolGaN™'s fast edges (100+ V/ns) generate high-frequency EMI that can exceed CISPR 22/32 Class B limits if not filtered. Estimated: a 100 V/ns edge on a 5 nH parasitic produces ~0.5 V peak ringing at 50 MHz. Add a small RC snubber (10 Ω + 1 nF) across the drain-source close to the device, use a common-mode choke on the DC bus, and consider slowing the gate with a 5-15 Ω RG to trade 5-10% switching loss for 10-15 dB EMI margin. For hard-switched totem-pole PFC, the lack of reverse recovery in GaN eliminates one major EMI source compared to Si super-junction MOSFETs.
تعمیل کی معلومات
RoHS compliant and halogen free per Infineon product page (fgr/44C, halogenFree/yes). Not AEC-Q100 qualified - this is an industrial/telecom/datacenter part, not automotive grade.
