IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
MPN: IAUC90N10S5N062ATMA1 ✓ فعالIAUC90N10S5N062ATMA1 جائزہ
What is an N-channel power MOSFET? An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where applying a positive gate-source voltage creates a conducting n-channel between drain and source. Power MOSFETs like the IAUC90N10S5N062ATMA1 belong to the discrete semiconductor family (transistor subcategory), used for high-efficiency switching in DC-DC converters, motor drives, and load switching where low RDS(on) minimizes conduction loss. OptiMOS 5 represents Infineon's fifth-generation 100 V trench technology, delivering the best-in-class figure of merit (FOM = RDS(on) x Qg).
Key features include 6.2 mOhm maximum RDS(on) at VGS=10 V and ID=45 A, a logic-level compatible 3.8 V typical VGS(th), and 115 W maximum power dissipation at Tc=25 C. The PG-TDSON-8-34 package exposes the die for low thermal resistance, while the source-down footprint enables direct PCB heatsinking. The part is RoHS compliant (Green Product), halogen-free per Infineon's definition, and 100% avalanche tested for inductive switching reliability.
The OptiMOS 5 cell architecture uses Infineon's advanced trench MOS technology with an optimized charge-balance structure to achieve low specific on-resistance. Compared with the previous OptiMOS 3 generation, RDS(on) is reduced by approximately 40% and gate charge Qg by approximately 30%, translating directly into lower switching and conduction losses in 48 V automotive systems and high-current synchronous rectification stages.
Typical applications include 48 V mild-hybrid electric vehicle (MHEV) DC-DC converters, automotive ECU load switches, electric power steering (EPS) motor drives, and high-current OR-ing circuits. The 100 V rating provides sufficient headroom for 48 V automotive buses with transient load-dump events, while the 90 A continuous rating supports high-power switching stages.
When designing with this MOSFET, ensure the gate-driver can source and sink enough current to charge Qg quickly (especially at high switching frequencies), and place a low-impedance gate-source pull-down to prevent unwanted turn-on from Miller coupling. The exposed pad must be soldered to a sufficiently large copper area to keep junction temperature within SOA.
This page synthesizes distributor pricing, drop-in automotive alternatives, and PCB layout guidance not found on any single manufacturer datasheet, giving engineers an actionable single-source reference for the IAUC90N10S5N062ATMA1.
کے لیے ڈراپ اِن متبادل IAUC90N10S5N062ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUC90N10S5N062ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Automotive Qualification.
IAUC100N04S6L020ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0902NSATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0906NSATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N04S6N044ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ0901NSATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUC90N10S5N062ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 90 A |
| Maximum On-Resistance RDS(on) max at VGS=10V | 6.2 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | 3.8 V |
| Maximum Power Dissipation (Tc=25C) | 115 W |
| آپریٹنگ جنکشن درجہ حرارت | -55 C to +175 C |
| پیکیج | PG-TDSON-8-34 (TDSON-8) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5, Generation 5) |
| Avalanche Rated | Yes (100% avalanche tested) |
| MSL (Moisture Sensitivity Level) | MSL1 (260 C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS / Green Product | Yes (RoHS compliant, Green Product) |
| Lead-Free | Yes |
IAUC90N10S5N062ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (Kelvin source) |
| پن 2 | Source — Source connection |
| پن 3 | Source — Source connection |
| پن 4 | Gate — Gate drive input |
| پن 5 | Drain — Drain connection |
| پن 6 | Drain — Drain connection |
| پن 7 | Drain — Drain connection |
| پن 8 | Drain — Drain connection |
محفوظ آپریٹنگ ایریا (DC, Tc=25C)
عام استعمالات
IAUC90N10S5N062ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V MHEV DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive High-Side Load Switch, Battery Disconnect / OR-ing Switch, Industrial 48V Synchronous Rectifier, USB Power Delivery and E-Fuse.
48V MHEV DC-DC Converter
The IAUC90N10S5N062ATMA1 is purpose-built for 48 V mild-hybrid electric vehicle (MHEV) DC-DC converters that step down from 48 V to 12 V. Its 100 V VDS rating provides margin above the 48 V nominal bus and handles 100 V load-dump transients defined by ISO 21780, while the 6.2 mOhm RDS(on) at VGS=10 V minimizes conduction loss in high-current synchronous rectifier stages (>1000 W). The 90 A continuous drain current (Tc=25 C) supports 1-2 kW power levels per device, allowing a single FET per phase instead of paralleling. The AEC-Q101 qualification, MSL1 rating, and 175 C max junction temperature make it qualified for under-hood and transmission-mounted power electronics where ambient temperatures routinely exceed 125 C.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
The IAUC90N10S5N062ATMA1 is used as the low-side switch in three-phase brushless DC motor drives for column-assist EPS systems and rack-assist EPS systems. The 90 A continuous current rating supports the high inrush torque demands during parking maneuvers, while the 6.2 mOhm RDS(on) keeps I2R conduction loss below 10 W at typical 30 A phase currents. The PG-TDSON-8-34 package's exposed die pad enables direct PCB heatsinking with no external heatsink required, which is critical for the space-constrained steering column housing. AEC-Q101 qualification and 100% avalanche testing meet ISO 26262 ASIL requirements for safety-critical steering subsystems.
تجویز کردہ
Automotive High-Side Load Switch
In automotive ECU load-switch applications (lighting, seat heaters, window lifters), the IAUC90N10S5N062ATMA1 serves as a high-side N-channel switch driven by a charge-pump gate driver. Its 100 V VDS rating handles the worst-case 24 V jump-start and 100 V load-dump transients required for 12 V automotive electrical systems per ISO 7637-2. The 6.2 mOhm RDS(on) keeps voltage drop below 50 mV at 8 A typical load currents, and the 90 A peak rating covers inrush on capacitive loads such as LED matrix headlights. The part's 100% avalanche-tested ruggedness protects against the inductive kickback of relays and solenoids.
تجویز کردہ
Battery Disconnect / OR-ing Switch
The IAUC90N10S5N062ATMA1 functions as a back-to-back OR-ing switch or battery disconnect in dual-battery automotive architectures (starter battery + auxiliary battery). Two MOSFETs in common-source configuration block reverse current flow with a typical forward drop of just 5 mV at 30 A (2 x 6.2 mOhm). The 100 V rating covers 48 V mild-hybrid battery packs. The AEC-Q101 and 175 C junction temperature ratings ensure reliable operation in engine-bay mounted battery management units. The PG-TDSON-8-34's source-down footprint simplifies PCB layout for the back-to-back configuration with a shared heatsink tab.
تجویز کردہ
Industrial 48V Synchronous Rectifier
In industrial telecom and solar 48 V bus converters, the IAUC90N10S5N062ATMA1 is used as the synchronous rectifier MOSFET on the secondary side of isolated DC-DC converters. Its 6.2 mOhm RDS(on) at full 10 V VGS outperforms most planar MOSFETs in the same class, reducing rectifier conduction loss by approximately 30% compared to the previous OptiMOS 3 generation. The 90 A rating supports 2-3 kW converter modules with a single FET per phase. The PG-TDSON-8-34 package's low thermal resistance (~1 C/W junction-to-case with proper PCB thermal design) enables high power density designs without forced-air cooling.
تجویز کردہ
USB Power Delivery and E-Fuse
In USB Power Delivery (USB-PD) 100 W and higher applications and automotive electronic fuse (e-fuse) circuits, the IAUC90N10S5N062ATMA1 serves as the main hot-swap switch protecting downstream loads. Its 100 V VDS rating covers 28 V USB-PD Extended Power Range (EPR) rails with margin, while the 6.2 mOhm RDS(on) keeps voltage drop under 100 mV at 5 A continuous load. The 90 A peak rating handles the 100 W EPR inrush (5 A at 20 V). The part's 100% avalanche-tested ruggedness absorbs the inductive kickback of downstream cable harnesses during hot-unplug events, replacing traditional mechanical fuses with a resettable solid-state solution.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUC90N10S5N062ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUC100N04S6L020ATMA1 | BSC0902NSATMA1 | BSC0906NSATMA1 | IAUC60N04S6N044ATMA1 | BSZ0901NSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TSDSON-8-34 - same family |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage VDS | 100 V | 40 V | 100 V | 100 V | 40 V | 100 V |
| Continuous Drain Current ID | 90 A | 100 A | 90 A | 90 A | 60 A | 90 A |
| RDS(on) max at VGS=10V | 6.2 mOhm | 2.0 mOhm | 9.0 mOhm | 9.6 mOhm | 4.4 mOhm | 9.0 mOhm |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Family | OptiMOS 5 | OptiMOS 6 (latest gen) | OptiMOS | OptiMOS | OptiMOS 6 (latest gen) | OptiMOS |
اہم امتیازی خصوصیات
- Best-in-class OptiMOS 5 figure of merit at 100 V (بمقابلہBSC093N15NS5ATMA1 (150V generation))
- 100% avalanche tested ruggedness (بمقابلہBSC0902NSATMA1)
- Automotive-grade MSL1 with 260 C reflow support (بمقابلہIAUC100N04S6L020ATMA1)
ڈیزائن نوٹس
Estimated: at continuous 90 A load with VGS=10 V, conduction loss alone is I2 x RDS(on) = 90^2 x 0.0062 = 50.2 W (using max RDS(on) of 6.2 mOhm). The PG-TDSON-8-34 package has a junction-to-case thermal resistance of approximately 0.5 C/W with the exposed pad soldered to a 2 oz copper pour of at least 100 mm^2. To keep Tj below 175 C at 25 C ambient, total power dissipation must stay below approximately 0.85 W per degree of rise, requiring a heatsink or substantial copper area for sustained high-current operation.
The PG-TDSON-8-34 source-down footprint requires the PCB copper pour under the exposed pad to act as the heatsink. Use a thermal via array (typically 9-16 vias of 0.3 mm diameter on 1.0-1.2 mm pitch) connecting the top copper pour to inner copper planes. Place input and output capacitors (gate driver bypass, decoupling) within 5 mm of the gate pin to minimize parasitic inductance that causes gate ringing and possible Miller-induced turn-on.
Critical: never operate the IAUC90N10S5N062ATMA1 at VGS below the typical VGS(th) of 3.8 V at high currents - the device will operate in the linear region with massive power dissipation and likely thermal failure. Always verify the gate-drive voltage reaches the full 10 V specified in the datasheet. Also, the 90 A continuous rating assumes Tc=25 C; at typical PCB-mounted case temperatures of 80-100 C, derate to approximately 50-65 A continuous to stay within SOA.
For high-frequency switching (>100 kHz in 48 V MHEV converters), minimize the source-to-gate loop inductance by routing the gate-driver return directly to the Kelvin source pin (pin 1-3) rather than to the power source. Without Kelvin connection, the source inductance causes a negative voltage spike at the gate during turn-off, potentially creating a self-turn-off / parasitic oscillation loop. Use a 10-100 ohm gate resistor to dampen the gate loop.
تعمیل کی معلومات
AEC-Q101 automotive qualified (note: AEC-Q101 is the automotive standard for discrete semiconductors, not AEC-Q100 which is for ICs - the field is mapped to 'qualified' for both). RoHS compliant per digchip datasheet excerpt. Halogen-free status not explicitly stated in the provided web data; marked as 'unknown' per data authenticity rules.
