IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon
MPN: IAUC50N08S5L096ATMA1 ✓ فعالIAUC50N08S5L096ATMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field at the gate terminal to modulate conduction between source and drain. Within the semiconductor taxonomy, MOSFETs belong to the discrete power-transistor family, which sits beneath power management ICs and voltage regulators in the power-conversion hierarchy. N-channel MOSFETs such as this one are the workhorses of low-voltage synchronous rectification, motor drive, and high-current switching because electron mobility in the channel is roughly 2-3x higher than hole mobility in equivalent P-channel devices.
Key features include an ultra-low 9.6 mΩ RDS(on) at VGS=10 V, ID=25 A, a 60 W continuous power dissipation rating at TC=25°C, and an SO8-compatible 5x6 mm land pattern that is pin-to-pin interchangeable with industry-standard PG-TDSON-8 footprints. The OptiMOS 5 process delivers a low figure-of-merit (FOM = RDS(on) × Qg), which simultaneously reduces conduction losses and gate-drive switching losses, critical for high-frequency SMPS and motor-PWM stages.
Architecturally, the part uses Infineon's trench MOSFET technology with an optimized cell pitch that minimizes gate charge while maintaining low on-resistance. The result is a device that switches cleanly at frequencies up to several hundred kHz and withstands avalanche energy transients typical of automotive 12 V/24 V bus environments, including load-dump and inductive kickback events.
Typical applications include automotive LED lighting drivers, brushless DC (BLDC) motor controllers for cooling fans and pumps, DC-DC converter high-side and low-side switches, battery protection circuits in 12 V/24 V systems, and solenoid drivers. The 80 V drain rating provides ample headroom above the 24 V automotive transient envelope while keeping RDS(on) lower than 40 V or 60 V alternatives.
When designing with this part, ensure adequate gate-drive strength (typically 10 V VGS) and minimize parasitic source-inductance in the gate-return path. Thermal management relies on copper pours under the exposed pad; without them the 60 W TC rating cannot be realized at moderate ambient temperatures.
کے لیے ڈراپ اِن متبادل IAUC50N08S5L096ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUC50N08S5L096ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Series, MSL Level.
IAUC100N08S5N043ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N06S5L073ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC90N10S5N062ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC80N04S6N036ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC265N10LSFGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC016N08NM8ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC50N08S5L096ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 50 A (Tc) |
| Pulsed Drain Current (IDM) | 200 A |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A |
| Power Dissipation (PD) | 60 W (Tc) |
| آپریٹنگ درجہ حرارت رینج | -55°C to +175°C |
| پیکیج | PG-TDSON-8-33 (5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
IAUC50N08S5L096ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate control input (MOSFET gate terminal) |
| پن 2 | Source — Source terminal (electrically connected to exposed pad) |
| پن 3 | Source — Source terminal (electrically connected to exposed pad) |
| پن 4 | Drain — Drain terminal (main power input) |
| پن 5 | Source — Source sense pin (Kelvin connection) |
| پن 6 | Source — Source sense pin (Kelvin connection) |
| پن 7 | Source — Source terminal (electrically connected to exposed pad) |
| پن 8 | Source — Source terminal (electrically connected to exposed pad) |
محفوظ آپریٹنگ ایریا (SOA) - IAUC50N08S5L096ATMA1
عام استعمالات
IAUC50N08S5L096ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive LED Lighting Drivers, BLDC Motor Control, 12V/24V DC-DC Converter Switch, Battery Protection and Hot-Swap, Solenoid and Relay Drivers, Industrial 24V Automation.
Automotive LED Lighting Drivers
The IAUC50N08S5L096ATMA1's 9.6 mΩ RDS(on) at VGS=10 V minimizes conduction losses in high-current LED string drivers, where 5-15 A continuous currents are common. Its 80 V VDS rating provides ample headroom above the 24 V automotive bus envelope including 35 V load-dump transients, while the AEC-Q101 qualification ensures reliability under hood and chassis thermal cycling. Placed as the high-side PWM switch in a buck-converter LED driver, it dissipates roughly I²R = 0.96 W at 10 A, allowing compact designs without active cooling.
تجویز کردہ
BLDC Motor Control
In brushless DC motor drive half-bridges, the IAUC50N08S5L096ATMA1's 50 A continuous drain current and 200 A pulsed rating easily handle inrush and stall currents typical of 12 V/24 V cooling fans, water pumps, and seat-adjustment motors. The OptiMOS 5 figure-of-merit reduces switching losses at 20-50 kHz PWM, improving inverter efficiency by 1-2% versus older generations. Mounted on a 1 oz copper pour of at least 200 mm², it sustains the 60 W TC rating during repetitive stall-recovery cycles.
تجویز کردہ
12V/24V DC-DC Converter Switch
As the main switch in a 24 V-to-12 V buck converter or as a synchronous rectifier, the IAUC50N08S5L096ATMA1's low Qg and low RDS(on) deliver high efficiency at 100-300 kHz switching frequencies. The 80 V rating accommodates 24 V bus transients, while the 5x6 mm footprint keeps the layout compact for high-density power-supply designs. Total conduction loss at 20 A output is approximately 4 W, manageable on a 4-layer PCB with thermal vias to inner-plane copper.
تجویز کردہ
Battery Protection and Hot-Swap
In 12 V/24 V battery management systems, the IAUC50N08S5L096ATMA1 serves as the disconnect switch on the high-side path. Its 9.6 mΩ RDS(on) keeps continuous conduction loss under 1 W at 10 A continuous load, while the 50 A rating supports inrush peaks during capacitive loads. The 175°C junction rating provides thermal margin during sustained overcurrent events, and the AEC-Q101 qualification matches the harsh underhood environment. Gate resistance controls dv/dt during turn-off to limit voltage overshoot.
تجویز کردہ
Solenoid and Relay Drivers
Automotive solenoid drivers for transmission shift valves, fuel injectors, and EV charging contactors benefit from the IAUC50N08S5L096ATMA1's 200 A pulsed current rating and avalanche-energy robustness. The 80 V rating withstands flyback transients from inductive loads when paired with a freewheeling diode or TVS clamp. With proper gate-drive circuitry, this part can switch solenoid currents of 20-30 A repeatedly without thermal runaway, supported by the 175°C maximum junction temperature.
تجویز کردہ
Industrial 24V Automation
In factory-automation PLCs and 24 V industrial bus systems, the IAUC50N08S5L096ATMA1's 80 V rating protects against the 24 V industrial transients per IEC 61131-2, while the 9.6 mΩ RDS(on) keeps efficiency high in continuous conduction. The OptiMOS 5 platform provides predictable switching performance for high-side PWM dimming of indicator LEDs and motor-control outputs. The AEC-Q101 qualification offers extended reliability beyond commercial-grade parts, suitable for industrial-environment temperature swings.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUC50N08S5L096ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUC100N08S5N043ATMA1 | IAUC60N06S5L073ATMA1 | IAUC90N10S5N062ATMA1 | IAUC80N04S6N036ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 60 V | 100 V | 40 V |
| RDS(on) max @ VGS=10V | 9.6 mΩ | 4.3 mΩ | 7.3 mΩ | 6.2 mΩ | 3.6 mΩ |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
اہم امتیازی خصوصیات
- 80V VDS provides voltage headroom above 24V automotive transients (بمقابلہIAUC60N06S5L073ATMA1)
- Higher continuous current rating in same footprint (بمقابلہISC016N08NM8ATMA1)
- Lower RDS(on) at equivalent voltage rating than 100V alternatives (بمقابلہBSC265N10LSFGATMA1)
- OptiMOS 5 latest-generation performance (بمقابلہIAUC80N04S6N036ATMA1 (OptiMOS 6))
ڈیزائن نوٹس
Estimated: at PD=5 W continuous drain-source dissipation in free air with the PG-TDSON-8-33 mounted on a 4-layer 1 oz copper 1 square-inch pad, RthJA is approximately 50 C/W, producing a junction temperature rise of 250°C above ambient. Without adequate copper the part will thermal-limit below its 60 W TC rating. Designers must provide at least 200 mm² of copper connected to the exposed pad, plus thermal vias to inner planes, to achieve reliable operation. The 175°C maximum junction rating provides headroom but does not substitute for proper heatsinking at sustained high dissipation.
Layout the gate-drive loop with the shortest possible trace between the gate-driver output and pin 1, with the gate return-source sense pins (5,6) used as the Kelvin reference for high-side applications. Place a 10-100 Ω gate resistor in series with the gate to dampen parasitic ringing and limit peak gate current during turn-on. Minimize source-inductance in the high-current path by using wide copper pours on multiple layers stitched with vias. The exposed pad must be soldered to a copper land of at least 5x6 mm with thermal vias for optimal heat transfer.
Common pitfalls when using the IAUC50N08S5L096ATMA1 include: (1) exceeding the maximum VGS rating, which is typically ±20 V - use a gate-drive clamp or TVS if transients exceed this; (2) ignoring avalanche-energy during inductive switching - add a freewheeling diode or TVS across drain-source; (3) under-driving the gate below 10 V which dramatically increases RDS(on) and dissipation; (4) omitting a sufficiently stiff gate-driver with sufficient peak current capability (>1 A) for fast switching. Review the datasheet absolute maximum ratings before finalizing the design.
For high-current switching applications, place the gate-driver IC within 10 mm of the MOSFET gate pin to minimize parasitic inductance in the gate loop. Use a 4-layer PCB with the second layer as a continuous ground plane stitched to the MOSFET source pad with multiple vias. The drain-source switching node should be routed with minimal loop area and shielded by adjacent ground copper to reduce EMI. Keep sensitive analog traces away from the switching node and consider a snubber network if ringing exceeds 20% of VDS during turn-off transients.
تعمیل کی معلومات
AEC-Q101 qualified (automotive grade). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free. Conflict-minerals compliant per Infineon supply-chain disclosures.
