IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon
MPN: IAUCN08S7L110ATMA1 ✓ فعالIAUCN08S7L110ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching transistor used as the primary power-conversion element in synchronous buck converters, half-bridges, full-bridges, and motor-drive half-stages. Within the broader taxonomy, MOSFETs belong to discrete semiconductors, then power transistors, then FETs; they are the workhorse of switch-mode power supplies (SMPS) because of their fast switching, low conduction loss, and ease of paralleling. The IAUCN08S7L110 belongs to Infineon's 75 V–120 V automotive-grade MOSFET portfolio targeting 48 V mild-hybrid and high-current automotive LED/load-switch subsystems.
Key features include an 11 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a continuous drain-current rating of 50 A (T<sub>j</sub>) and pulsed capability suitable for repetitive inrush events, an avalanche-rated single-pulse body diode, and an operating junction temperature range of -55 °C to +175 °C qualified to automotive reliability expectations. The PG-TDSON-8-34 package features an exposed drain tab that doubles as the electrical drain connection and a low-thermal-resistance path to the PCB copper pad, allowing direct top-side cooling on the PCB.
The IAUCN08S7L110ATMA1 uses Infineon's advanced trench-cell architecture, balancing low R<sub>DS(on)</sub> × area figure of merit with low gate charge (Q<sub>G</sub>) and low output charge (Q<sub>OSS</sub>) for high-frequency switching. The result is reduced switching loss in hard-switched topologies and improved light-load efficiency in synchronous-rectifier positions. The trench process is qualified per automotive-grade reliability flows.
Typical applications include 48 V automotive systems (mild-hybrid auxiliary loads, e-motor drives), automotive LED lighting drivers, high-side load switches, synchronous rectification in isolated and non-isolated DC-DC converters, and industrial hot-swap / e-fuse circuits. The 80 V rating gives sufficient margin for 48 V bus transients and inductive kick events.
When designing with this part, pay attention to gate-drive voltage: full enhancement (and lowest R<sub>DS(on)</sub>) requires V<sub>GS</sub>=10 V, and operation below ~6 V should be avoided. For high-current (>30 A continuous) designs, the PCB drain pad must be a multi-via array directly under the exposed tab; otherwise the silicon will thermally limit long before its rated current is reached.
This page synthesizes distributor pricing, automotive-grade application context, and PCB-layout thermal guidance drawn from manufacturer documentation that is typically scattered across datasheets and application notes.
کے لیے ڈراپ اِن متبادل IAUCN08S7L110ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUCN08S7L110ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, MSL Level, Series, Drain-Source Voltage (VDS).
IAUCN08S7L033ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN10S5L110TATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN10S5L280DATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N037GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC011N04NM7VATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN08S7L110ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| پیکیج | PG-TDSON-8-34 (TDSON-8) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology | OptiMOS™ (Trench) |
| RoHS اسٹیٹس | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) |
| Polarity | Single N-Channel |
| Configuration | Single |
IAUCN08S7L110ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (Kelvin source) |
| پن 2 | Source — Source connection |
| پن 3 | Source — Source connection |
| پن 4 | Gate — Gate drive input |
| پن 5 | Drain — Drain connection (also exposed tab) |
| پن 6 | Drain — Drain connection (also exposed tab) |
| پن 7 | Drain — Drain connection (also exposed tab) |
| پن 8 | Drain — Drain connection (also exposed tab) |
محفوظ آپریٹنگ ایریا - IAUCN08S7L110ATMA1
عام استعمالات
IAUCN08S7L110ATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: 48 V Automotive Mild-Hybrid Auxiliary Loads, Automotive LED Lighting Drivers, Synchronous Rectification in 48 V DC-DC Converters, High-Side Load Switches and Hot-Swap Circuits, Industrial 24 V–60 V Motor Drive Half-Bridge, eFuse and Battery Disconnect Units, Power OR-ing and Reverse-Polarity Protection.
48 V Automotive Mild-Hybrid Auxiliary Loads
IAUCN08S7L110ATMA1 is well-suited for 48 V mild-hybrid auxiliary loads. Its 80 V V_DS rating provides ample transient margin above the 48 V nominal bus (with load-dump spikes), while the 11 mΩ R_DS(on) at V_GS=10 V keeps conduction loss low at typical 10–25 A continuous loads such as electric power steering, brake boosters, and coolant pumps. Placed as a high-side switch driven by an Infineon EiceDRIVER gate IC, the MOSFET delivers >97% efficiency at full load. The TDSON-8 exposed drain tab allows PCB-direct cooling without an external heatsink.
تجویز کردہ
Automotive LED Lighting Drivers
IAUCN08S7L110ATMA1 fits automotive LED headlamp and DRL driver stages where high-current PWM switching at 80 V is required. The 50 A continuous rating covers the inrush of large LED arrays at cold-start, while the OptiMOS trench cell gives low Q_G so the high-side FET can switch at >100 kHz with low transition loss. In a buck topology, the IAUCN08S7L110 dissipates less heat than standard MOSFETs, allowing smaller PCB footprints behind headlamp assemblies. The -55 °C to +175 °C junction range supports under-hood and headlamp thermal environments.
تجویز کردہ
Synchronous Rectification in 48 V DC-DC Converters
IAUCN08S7L110ATMA1 works as the synchronous-rectifier FET in non-isolated 48 V-to-12 V buck converters for mild-hybrid power distribution. Its 11 mΩ R_DS(on) at full gate drive minimizes rectifier conduction loss, while low Q_OSS reduces dead-time loss during the switch-node transition. Paired with a primary-side IAUC120N06S5L015ATMA1 or similar 60 V FET, it delivers >95% efficiency across 5–30 A load. The TDSON-8 footprint allows both FETs to share the same land pattern, simplifying PCB layout.
تجویز کردہ
High-Side Load Switches and Hot-Swap Circuits
IAUCN08S7L110ATMA1 is well-matched to high-side load-switch and hot-swap/e-fuse positions in 48 V industrial and automotive systems. Its 80 V V_DS, 50 A I_D, and avalanche-rated body diode handle the inrush of large capacitive loads (e.g., 1000 µF+) and inductive kick events on disconnect. Driven by a high-side gate driver such as IR2117PBF or BTS3028SDRATMA1, the MOSFET enables controlled dV/dt turn-on, inrush limiting, and fast fault isolation. Automotive AEC-Q101-grade reliability supports safety-critical e-fuse applications.
تجویز کردہ
Industrial 24 V–60 V Motor Drive Half-Bridge
IAUCN08S7L110ATMA1 suits industrial 24 V–60 V brushed and BLDC motor-drive half-bridges. Two IAUCN08S7L110ATMA1 in a half-bridge configuration can switch at 25 kHz–50 kHz with low transition loss, driving motors up to 30 A continuous with proper PCB thermal design. The TDSON-8 footprint keeps the half-bridge compact, and the 175 °C junction rating tolerates the high thermal load of stall-current events. Pair with a three-phase gate driver such as 2EDL8033G4CXTMA1 or 6EDL04N02PRXUMA1 for full BLDC control.
تجویز کردہ
eFuse and Battery Disconnect Units
IAUCN08S7L110ATMA1 fits 48 V battery disconnect units (BDU) and electronic fuse (eFuse) modules where fast fault clearance and low steady-state loss are both required. The 11 mΩ R_DS(on) keeps the BDU drop below 0.6 V at 50 A continuous, while the SOA allows short-circuit interruption in the millisecond range when paired with a current-sense amplifier and a fast gate driver. The 80 V V_DS rating covers 48 V nominal plus inductive transient overshoot during disconnect events.
تجویز کردہ
Power OR-ing and Reverse-Polarity Protection
IAUCN08S7L110ATMA1 enables power OR-ing and reverse-polarity protection at 48 V bus inputs. Connected as a source-follower with the drain to the load and body-diode pointing forward, the FET blocks reverse current flow with a low forward drop (~11 mΩ × I_load) under normal operation. This eliminates the ~0.7 V Schottky diode loss common in 48 V OR-ing designs, reducing thermal dissipation by an order of magnitude at 20 A+ load. The 80 V rating comfortably covers 48 V nominal plus transient events.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUCN08S7L110ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUCN08S7L033ATMA1 | IAUCN10S5L110TATMA1 | IAUCN10S5L280DATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same |
| V_DS max | 80 V | 80 V (same) | 100 V (+25%) | 100 V (+25%) | 40 V (-50%) | 40 V (-50%) |
| R_DS(on) typ at V_GS=10V | 11 mΩ | 3.3 mΩ (lower) | 11 mΩ (same) | 28 mΩ (higher) | 1.1 mΩ (much lower) | 7.6 mΩ (lower) |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) |
| Technology Family | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) |
اہم امتیازی خصوصیات
- Balanced 80 V / 11 mΩ / low Q_G OptiMOS in compact TDSON-8 footprint (بمقابلہIAUC120N04S6N009ATMA1)
- Lower R_DS(on) class alternative available in same package (بمقابلہIAUCN08S7L033ATMA1)
- Higher-voltage drop-in for additional bus margin (بمقابلہIAUCN10S5L110TATMA1)
ڈیزائن نوٹس
Estimated: at 25 A continuous drain current with R_DS(on) = 11 mΩ, conduction loss ≈ I² × R = 625 × 0.011 = 6.9 W. With TDSON-8 θJA ≈ 50 °C/W on a 1 oz 4-layer PCB with 1 sq-inch copper drain pad, junction rise ≈ 6.9 × 50 = 345 °C above ambient - above the 175 °C limit. To stay within SOA at >20 A continuous, use 2 sq-inch copper drain area and a 6×6 thermal-via array under the exposed tab, which drops θJA to ~35 °C/W and junction rise to ~240 °C - still over limit. For continuous >15 A applications, derate to ~50% of nominal or parallel two IAUCN08S7L110ATMA1 devices.
Place the TDSON-8-34 land pattern per the Infineon recommended footprint in the datasheet. Use a 6×6 array of 0.3 mm thermal vias in the drain pad, plugged or capped to prevent solder wicking during reflow. Source pins (1-3) should be routed as a Kelvin source if possible - separate the gate-drive return from the power-source return by a few millimeters to minimize source-inductance-induced gate-drive ringing. Keep gate-drive traces short (<10 mm) and surrounded by ground.
Do not operate the IAUCN08S7L110ATMA1 below V_GS = 6 V - partial enhancement dramatically increases R_DS(on) and causes thermal runaway. Always use a 10 V gate drive (or 8 V minimum). Avoid inductive kick events that exceed the datasheet avalanche energy (E_AS); for relay or motor switching, add a TVS or RC snubber across the drain-source. Finally, ensure the gate-source ESD protection - the gate is ESD-sensitive and a 10 kΩ gate resistor plus a TVS to ground is recommended in production designs.
تعمیل کی معلومات
Per Infineon product page, IAUCN08S7L110 belongs to the automotive-grade OptiMOS family (AEC-Q101 expected). RoHS and lead-free confirmed per distributor listings; halogen-free status not stated in available data and marked unknown.
