IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
MPN: IPC90N04S5L3R3ATMA1 ✓ فعالIPC90N04S5L3R3ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that regulates current flow between its drain and source terminals. The OptiMOS 5 40 V family belongs to the broader category of low-voltage power MOSFETs used for switching and synchronous-rectification applications, sitting within the hierarchy of power semiconductors and discrete transistors. Infineon's OptiMOS technology emphasizes low on-resistance per unit silicon area, low gate charge, and fast switching transitions to minimize conduction and switching losses.
Key features include 3.3 mΩ RDS(on) max at VGS = 10 V, a low typical gate charge QG suitable for high-frequency switching, an integrated source-drain diode for synchronous rectification, and a logic-level gate threshold that allows direct drive from 3.3 V or 5 V microcontrollers. The PG-TDSON-8-34 package features a low thermal resistance drain-to-case path via the exposed metal pad, enabling 62 W power dissipation (TC). MSL1 moisture sensitivity and 260°C peak reflow compatibility support standard lead-free SMT assembly.
The device uses an N-channel enhancement-mode architecture built on Infineon's advanced planar-trench process technology. Compared with the prior OptiMOS 3 generation, the OptiMOS 5 family typically delivers lower figure-of-merit (FOM = RDS(on) × QG), enabling cooler operation in high-current applications. The integrated body diode is robust enough to handle avalanche events, as confirmed by 100% avalanche testing at the production line.
Typical applications include automotive 12 V/24 V systems such as electronic power steering (EPS), brake systems, fuel-injection drivers, HVAC blowers, LED lighting drivers, and DC-DC converter high-side switches. It also fits industrial motor control, e-bike controllers, battery management protection MOSFETs, and telecom 48 V bus hot-swap circuits. The AEC-Q101 qualification makes it especially suitable for safety-critical automotive ECUs.
When designing with this part, ensure the gate-drive voltage reaches at least 10 V for the lowest on-resistance (logic-level operation at 3.3 V gives higher RDS(on) - check curves). The exposed pad must be soldered to a sufficient copper area for thermal dissipation; without it, the 62 W rating drops sharply. Keep the gate-trace short and add a small series gate resistor to dampen ringing.
This page synthesizes distributor pricing tiers, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet. For engineers evaluating the IPC90N04S5L3R3ATMA1 against competing 40 V MOSFETs, the comparison table and selection guide below provide the engineering trade-offs.
کے لیے ڈراپ اِن متبادل IPC90N04S5L3R3ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPC90N04S5L3R3ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), Product Family, Operating Temperature Range.
BSC0501NSIATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0993NDATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N06S5L073ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC011N06LM5ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD038N06NF2SATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD068P03L3GATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC027N10NS5ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC90N04S5L3R3ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 40V |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 90 A |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25°C) | 62 W |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C |
| پیکیج | PG-TDSON-8-34 (TDSON-8) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | 260°C |
| Qualification | AEC-Q101 automotive qualified |
| Avalanche Tested | 100% (production-level) |
| RoHS Compliance | Compliant (Green Product) |
IPC90N04S5L3R3ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; logic-level VGS(th) ~2V, drive to 10V for full RDS(on) spec |
| پن 2 | Drain — Drain connection (bonds to exposed pad) |
| پن 3 | Drain — Drain connection (bonds to exposed pad) |
| پن 4 | Drain — Drain connection (bonds to exposed pad) |
| پن 5 | Source — Source connection |
| پن 6 | Source — Source connection |
| پن 7 | Source — Source connection |
| پن 8 | Source — Source connection |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IPC90N04S5L3R3ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive Electronic Power Steering (EPS), Brake System ECU - ABS Solenoid Driver, 48V Telecom Hot-Swap / OR-ing Controller, 12V DC-DC Synchronous Buck Converter, E-Bike and Electric Two-Wheeler Motor Drive, Automotive LED Headlamp Driver.
Automotive Electronic Power Steering (EPS)
The IPC90N04S5L3R3ATMA1's 3.3 mΩ RDS(on) at VGS=10V and 90 A continuous drain current make it an ideal low-side switch for high-current automotive EPS brushless-DC motor drivers. Placed between the 12 V battery rail and the MOSFET half-bridge, it dissipates I²R losses in the synchronous-rectifier path; the AEC-Q101 qualification and 175°C junction rating ensure compliance with automotive stress test standards. Compared with older 60 V parts, the 40 V VDS provides sufficient headroom for 12 V load-dump transients while minimizing dead-time body-diode conduction. Recommended companion Infineon parts: BTS7002-1EPA power switch, TLE72702-2D LDO, and EiceDRIVER 1EDI20N12AF gate driver.
تجویز کردہ
Brake System ECU - ABS Solenoid Driver
In anti-lock braking systems (ABS) the IPC90N04S5L3R3ATMA1 functions as the low-side switch for hydraulic solenoid valves, where 90 A peak currents and 12 V battery operation are typical. Its 3.3 mΩ RDS(on) keeps conduction losses below 5 W even at 30 A continuous, while the AEC-Q101 qualification satisfies ISO 26262 functional-safety evaluations on safety-critical ECUs. The exposed PG-TDSON-8-34 pad enables direct PCB copper heatsinking, eliminating the need for active cooling in tight ECU enclosures. Recommended companion parts: BTS724GF safety switch, TLF1963 linear regulator, and TLE94112 multi-half-bridge driver.
تجویز کردہ
48V Telecom Hot-Swap / OR-ing Controller
The IPC90N04S5L3R3ATMA1 serves as the high-side OR-ing FET in 48 V telecom rectifier and battery-backup modules, where its 40 V VDS handles 48 V nominal rails with margin for transients. The 3.3 mΩ on-resistance minimizes steady-state forward voltage drop (under 100 mV at 30 A), reducing power dissipation compared with standard 60 V parts. AEC-Q101 qualification is over-spec for telecom but provides higher reliability margin. Recommended companion parts: IR2302 half-bridge driver, TLE7181 motor driver (for gate-charge pump), and BTT6030 high-side switch.
تجویز کردہ
12V DC-DC Synchronous Buck Converter
As the synchronous rectifier (low-side) FET in a 12 V input buck converter, the IPC90N04S5L3R3ATMA1 minimizes dead-time body-diode conduction losses thanks to its low Qrr and robust integrated diode. The 3.3 mΩ RDS(on) at VGS=10V delivers >95% efficiency at 25 A output current, while the logic-level VGS(th) of 1.7-2.7 V allows direct drive from 5 V or 3.3 V gate-driver ICs. Used in automotive LED lighting drivers, infotainment power rails, and HVAC blower controls. Recommended companion parts: IR2011 half-bridge driver, IRFZ44N main switch, and BSC0501NSIATMA1 alternate low-side FET.
تجویز کردہ
E-Bike and Electric Two-Wheeler Motor Drive
The IPC90N04S5L3R3ATMA1 is well-suited for 24 V/36 V/48 V e-bike and electric scooter motor controllers, where its 90 A rating supports 750 W to 1500 W traction drives. The exposed drain pad allows direct mounting to a small heatsink or chassis frame, while 3.3 mΩ RDS(on) keeps I²R losses low during peak acceleration. AEC-Q101 automotive-grade construction provides extra ruggedness over the harsh vibration profile typical of two-wheelers. Recommended companion parts: IPB072N15N3 (150 V high-voltage option), IRF5210 motor driver, and TLF80511EJV33 LDO.
تجویز کردہ
Automotive LED Headlamp Driver
The IPC90N04S5L3R3ATMA1 functions as the high-side PWM switch in automotive LED headlamp and daytime-running-lamp (DRL) drivers, where 12 V battery operation and pulse-width-modulated dimming are required. The 90 A rating allows direct drive of high-power LED strings up to 30 A without paralleling multiple FETs, and the 175°C junction temperature tolerates the high ambient under-hood temperature. Logic-level VGS(th) compatibility with 5 V gate drivers simplifies the BOM. Recommended companion parts: BTS7002-2EPA, IRS2302 half-bridge driver, and BTS134DA high-side switch.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPC90N04S5L3R3ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC0501NSIATMA1 | BSC0993NDATMA1 | ISC011N06LM5ATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 | PG-TDSON-8 | PG-TDSON-8 | PG-TDSON-8 | PG-TDSON-8 |
| Drain-Source Voltage VDS (V) | 40 V | 60 V | 40 V | 60 V | 100 V |
| On-Resistance RDS(on) at VGS=10V (mΩ) | 3.3 mΩ | 5.0 mΩ | 0.99 mΩ | 1.1 mΩ | 2.7 mΩ |
| Automotive Qualification (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
| Operating Junction Temperature (°C) | 175°C | 175°C | 175°C | 175°C | 175°C |
اہم امتیازی خصوصیات
- Lowest RDS(on) in Infineon's OptiMOS 5 40V TDSON-8 family at 3.3 mΩ (بمقابلہBSC0501NSIATMA1)
- Optimized for 12V/24V automotive load-dump environments with 40V VDS (بمقابلہBSC027N10NS5ATMA1)
- AEC-Q101 qualified with 175°C junction rating and 100% avalanche testing (بمقابلہGeneric 40V TDSON-8 MOSFET from competitors)
ڈیزائن نوٹس
The IPC90N04S5L3R3ATMA1 is rated 62 W with TC held at 25°C; in real PCB applications, the case temperature rises significantly. Estimated: at 30 A continuous drain current and 40 V VDS in a buck converter with 50% duty cycle, average conduction loss is 30² × 0.0033 × 0.5 ≈ 1.5 W, easily handled by a 1 oz copper pour of 30×30 mm on the exposed pad. Without adequate copper area the junction will exceed 175°C and trigger thermal shutdown.
Solder the exposed drain pad to a continuous copper plane on top, bottom, and inner PCB layers stitched with thermal vias. Keep the gate-trace short (<10 mm) and add a 10 Ω series gate resistor close to the gate pin to dampen high-frequency ringing from the gate-drive loop inductance. Place the gate-driver IC and bypass capacitors (1 µF + 100 nF) within 5 mm of the gate and source pins.
Do not assume RDS(on) at VGS=4.5V is identical to the VGS=10V spec - at logic-level drive the on-resistance can be 30-50% higher, increasing conduction losses. Verify VGS(th) of 1.7-2.7V in production by sampling. The body diode is not optimized for high dV/dt synchronous-rectifier operation in hard-switched topologies - add anti-parallel Schottky or use dead-time minimization if reverse-recovery loss becomes excessive.
تعمیل کی معلومات
AEC-Q101 (automotive) qualified per Infineon product page. RoHS Green Product compliant. MSL1 / 260°C peak reflow compatible per JEDEC J-STD-020.
