IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN08S7L024ATMA1 ✓ فعالIAUCN08S7L024ATMA1 جائزہ
A power MOSFET is a voltage-controlled majority-carrier switch that uses an isolated gate to modulate conduction between source and drain terminals. Within the broader taxonomy, this device is an N-channel enhancement-mode MOSFET, itself a sub-family of discrete power transistors sitting under power semiconductors → MOSFETs → low-voltage MOSFETs. OptiMOS™ 7 represents Infineon's seventh-generation trench MOSFET platform, optimised for figure-of-merit (FOM = RDS(on) × Qg) reductions of typically 30-40% versus the previous generation, which translates directly into lower conduction loss, smaller gate-drive losses and reduced dead-time body-diode conduction in synchronous-rectifier stages.
Key differentiating specifications include a maximum RDS(on) of 2.4 mΩ at VGS=10 V, an ultra-low gate charge (Qg) characteristic of the OptiMOS 7 family, and an avalanche-rated single-pulse body diode suitable for inductive load switching. The PG-TDSON-8-34 footprint provides a top-side exposed pad for low thermal resistance (θJA typically in the 35-40 C/W range on a 1 oz 4-layer PCB) and a gull-wing lead profile compatible with standard JEDEC reflow profiles.
Architecturally, the device uses Infineon's advanced trench cell design with a very small pitch, which delivers low specific on-resistance while maintaining strong avalanche ruggedness and an intrinsic body diode with low Qrr for synchronous-rectifier dead-time management. The process is qualified to AEC-Q101 for automotive use, ensuring PPAP and long-term reliability across automotive temperature grades.
Typical applications include automotive 12 V and 24 V high-current synchronous rectification, electric power steering (EPS) motor drive stages, brushless DC (BLDC) motor control in water/oil pumps and fans, battery management system (BMS) protection FETs and DC-DC converter primary-side switches.
When designing with this part, prioritise gate-drive robustness — a 10 V gate drive is required to reach the rated 2.4 mΩ RDS(on), and a gate-source resistor of 10-100 Ω is recommended to dampen ringing and limit peak dV/dt-induced turn-on. Ensure the PCB layout provides a continuous copper pour under the exposed pad to achieve the lowest possible junction-to-ambient thermal resistance.
This page synthesises verified distributor pricing, qualified drop-in alternatives and practical design notes not consolidated in the manufacturer datasheet — use it alongside the Infineon datasheet for a complete engineering picture.
کے لیے ڈراپ اِن متبادل IAUCN08S7L024ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUCN08S7L024ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, MSL Level, Automotive Qualification.
IAUCN08S7L033ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7L042HATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUCN04S7L050HATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N04S6L030HATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC011N04NM7VATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC50N04S5L5R5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQEH50NE2LM7ZCGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN08S7L024ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | OptiMOS™ 7 N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | 150 A |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V |
| Power Dissipation (PD) | 148 W (Tc) |
| پیکیج | PG-TDSON-8-34 (SSO8 5x6 mm²) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +175C (Tj) |
| Avalanche Energy Rated | Yes (single-pulse) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | MSL1 (per JEDEC J-STD-020) |
IAUCN08S7L024ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; 10V typical, ±20V VGS max |
| پن 2 | Source — Source (Kelvin connection for clean gate drive) |
| پن 3 | Source — Source / power return |
| پن 4 | Drain — Drain (also bonded to exposed pad) |
| پن 5 | NC — Not connected (per datasheet) |
| پن 6 | NC — Not connected (per datasheet) |
| پن 7 | Source — Source / power return |
| پن 8 | Source — Source / power return |
محفوظ آپریٹنگ ایریا (estimated from datasheet SOA boundary)
عام استعمالات
IAUCN08S7L024ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive 12V / 24V Synchronous Rectification, Electric Power Steering (EPS) Motor Drive, BLDC Motor Control in Water/Oil Pumps and Fans, Battery Management System (BMS) Protection FET, High-Current DC-DC Converter Primary Switch, Industrial 24V / 48V Hot-Swap and ORing FET.
Automotive 12V / 24V Synchronous Rectification
The IAUCN08S7L024ATMA1 is purpose-built for the low-side and high-side synchronous-rectifier positions in automotive 12 V and 24 V buck and buck-boost converters. Its 2.4 mΩ max RDS(on) at VGS=10 V minimises I²R conduction loss — at 60 A load this corresponds to roughly 8.6 W per FET versus 11.8 W for a 3.3 mΩ part. The 80 V VDS rating provides ample headroom above the 24 V bus load-dump transient envelope (per ISO 7637-2). The PG-TDSON-8-34 footprint fits the standard automotive 5x6 mm power-PCB land pattern, enabling direct drop-in to existing designs. Use a UCC27211 or 1ED3142 gate driver with 10-100 Ω gate-source damping; below 50 kHz switching the loss is overwhelmingly conduction-dominated and the 2.4 mΩ advantage pays back directly.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
The IAUCN08S7L024ATMA1 suits the three-phase inverter stage of column-assist and rack-assist electric power steering, where the 80 V VDS comfortably handles a 12 V bus with margin for inductive kick from the BLDC windings. The 177 A continuous drain current rating gives 3-5x headroom over a typical 40 A peak EPS phase current, lowering Tj rise and extending thermal life. AEC-Q101 qualification is mandatory for EPS modules per automotive OEM PPAP requirements. The 148 W Tc-rated dissipation with a 4-layer 1 oz PCB copper pour keeps Tj below 150C even under continuous 30 A phase operation. Place the FET within 15 mm of the gate driver to minimise gate-loop inductance and avoid spurious turn-on.
تجویز کردہ
BLDC Motor Control in Water/Oil Pumps and Fans
In brushless-DC water pumps, oil pumps and cooling fans the IAUCN08S7L024ATMA1 operates as the low-side FET of a three-phase inverter. The OptiMOS 7 generation's low Qrr intrinsic body diode reduces dead-time body-diode conduction loss by typically 30-50% versus OptiMOS 5, which is material at 20 kHz PWM. The 2.4 mΩ RDS(on) keeps the steady-state I²R loss below 5 W per FET at a typical 45 A phase RMS. The PG-TDSON-8-34 (5x6 mm) footprint allows three FETs to fit on a compact inverter PCB section under 30 mm². AEC-Q101 plus 175C Tj rating make it suitable for under-hood ambient temperatures up to +125C.
تجویز کردہ
Battery Management System (BMS) Protection FET
The IAUCN08S7L024ATMA1 functions as the high-side or low-side battery protection FET in 12 V/24 V automotive BMS modules, where its 2.4 mΩ RDS(on) translates to less than 50 mV drop at the rated 100 A continuous battery current — critical for cold-crank assist. The 80 V VDS rating exceeds the 24 V system load-dump envelope with margin, and the avalanche-rated single-pulse body diode handles the inductive kick from the battery cabling inductance. The compact PG-TDSON-8-34 footprint allows the protection FET to fit inside the battery disconnect unit housing. Use a dedicated gate driver with over-current comparator (e.g., a 1ED44175N01B) to coordinate fault response.
تجویز کردہ
High-Current DC-DC Converter Primary Switch
In isolated and non-isolated 48 V-to-12 V or 24 V-to-12 V DC-DC converters the IAUCN08S7L024ATMA1 operates as the primary-side switch where the 80 V VDS comfortably covers the 48 V bus with transients. The 2.4 mΩ RDS(on) and low Qg keep the total switching+conduction loss under 4 W per FET at 30 A load, enabling 200 W designs on a 25x25 mm PCB without forced air cooling. The 175C Tj rating supports the high-ambient under-hood or rear-axle mounting typical of mild-hybrid converters. AEC-Q101 is required by most automotive OEM power-converter specifications. Use a 1ED3124 isolated gate driver and a small R-C snubber across the drain-source to limit peak ringing.
تجویز کردہ
Industrial 24V / 48V Hot-Swap and ORing FET
Outside automotive, the IAUCN08S7L024ATMA1 works in industrial 24 V and 48 V hot-swap and ORing applications where its 80 V VDS, 2.4 mΩ RDS(on) and 177 A continuous current rating combine to deliver ultra-low voltage drop on the power path. In ORing configurations the low RDS(on) reduces steady-state loss by tens of watts versus typical 10-30 mΩ ORing MOSFETs. The PG-TDSON-8-34 surface-mount footprint simplifies PCB assembly on standard SMT lines. For non-automotive applications the OptiMOS 7 platform's avalanche ruggedness provides protection during hot-plug transients. Use a dedicated hot-swap controller (e.g., LTC4282-class part) to manage inrush and fault response.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUCN08S7L024ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUCN08S7L033ATMA1 | IAUCN04S7L042HATMA1 | IAUCN04S7L050HATMA1 | ISC011N04NM7VATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) |
| VDS max | 80 V | 80 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 2.4 mΩ | 3.3 mΩ | 0.42 mΩ | 0.50 mΩ | 1.1 mΩ | 5.5 mΩ |
| Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Lowest RDS(on) in 80V OptiMOS 7 SSO8 family (بمقابلہIAUCN08S7L033ATMA1)
- Higher VDS rating versus 40V-class drop-ins (بمقابلہIAUCN04S7L042HATMA1 (40 V))
- Latest OptiMOS 7 generation FOM (بمقابلہIPC50N04S5L5R5ATMA1 (OptiMOS 5))
ڈیزائن نوٹس
Estimated: at continuous 60 A drain current with RDS(on)=2.4 mΩ, the conduction loss is I²×R = 60² × 0.0024 = 8.6 W per FET. With a PG-TDSON-8-34 thermal resistance of roughly 35 C/W on a 1 oz 4-layer PCB copper pour of 1 square inch, the junction temperature rise is approximately 8.6 × 35 = 300C — so for steady-state 60 A the PCB copper area must be increased to 2-3 square inches to keep Tj rise under 50C above ambient. Use the datasheet thermal model for the exact layout geometry; the above is a first-pass estimate.
Gate-loop inductance must be minimised to prevent spurious turn-on from dV/dt coupling. Place the gate driver within 10-15 mm of the gate pin, use a 10 Ω gate resistor in series and a 10 kΩ gate-source pull-down to hold the FET off during controller power-up. The drain-source loop area should be kept under 50 mm² to limit ringing — use a 0.1-1 µF snubber capacitor across drain-source if ringing exceeds 30% of VDS.
Do not operate above VGS=±20 V absolute maximum — 12 V gate drives are well within rating but any gate-drive overshoot from layout inductance can puncture the gate oxide. Avoid using the FET below its VGS(th) of typically 2-3 V where RDS(on) rises non-linearly. For paralleled operation, use separate gate resistors per device and ensure matched Tj at turn-on to prevent current hogging.
تعمیل کی معلومات
AEC-Q101 automotive-qualified per Infineon OptiMOS 7 automotive portfolio. RoHS and REACH compliant per manufacturer datasheet. MSL1 per JEDEC J-STD-020. Lead-free (Pb-free) reflow-compatible.
