IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
MPN: IAUT165N08S5N029ATMA2 ✓ فعالIAUT165N08S5N029ATMA2 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or block current in power-conversion circuits. Power MOSFETs sit within the broader hierarchy of discrete semiconductors, below IGBTs and thyristors, and are the workhorse of low-to-medium-voltage (< 250 V) switching applications. N-channel enhancement-mode MOSFETs like the IAUT165N08S5N029 are particularly common in high-current, low-side or high-side (with charge pump) switching positions because their lower R<sub>DS(on)</sub> per unit silicon area makes them more efficient than equivalent P-channel parts.
Key features of the IAUT165N08S5N029ATMA2 include a maximum pulsed drain current of 660 A, an avalanche energy rating of 225 mJ, and an operating junction temperature up to 175 °C. The combination of 2.9 mΩ R<sub>DS(on)</sub> and 80 V drain-source breakdown voltage places this part squarely in the 48 V automotive / mild-hybrid, battery-isolation, and high-current synchronous-rectification sweet spot. OptiMOS™ 5 trench technology minimises gate charge (Q<sub>G</sub>) and output capacitance (C<sub>oss</sub>) for fast switching and reduced driver losses.
Typical applications include 48 V eMobility power stages, high-current DC-DC converters, battery management systems (BMS) protection, motor drives for electric power steering (EPS) and water/oil pumps, and OR-ing / hot-swap controllers. Its low R<sub>DS(on)</sub> also makes it suitable for high-current synchronous rectification in telecom and server point-of-load converters. Design-in must respect the HSOF exposed-pad thermal path; without sufficient PCB copper, the 167 W Tc rating cannot be realised at realistic ambient temperatures.
کے لیے ڈراپ اِن متبادل IAUT165N08S5N029ATMA2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUT165N08S5N029ATMA2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), Transistor Type, MSL Level.
IAUCN08S7L033ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC151N08NM6ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB100N04S4H2ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NVMFS5C460NL
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SiR680DP
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUT165N08S5N029ATMA2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | IAUT165N08S5N029ATMA2 |
| Product Family | OptiMOS™ 5 |
| ٹرانزسٹر کی قسم | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +175 °C (T<sub>j</sub>) |
| پیکیج / کیس | PG-HSOF-8-1 (8+Tab, Surface Mount) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL Rating | MSL1 (up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS Compliance | Green Product (RoHS compliant) |
| Avalanche Tested | 100% Avalanche Tested |
IAUT165N08S5N029ATMA2 پن کنفیگریشن
| پن 1 | Gate — Gate drive input (0-10 V drive recommended) |
| پن 2 | Source — Source connection (low-side return path) |
| پن 3 | Source — Source connection (low-side return path) |
| پن 4 | Source — Source connection (low-side return path) |
| پن 5 | Drain — Drain connection (also bonded to exposed tab) |
| پن 6 | Drain — Drain connection (also bonded to exposed tab) |
| پن 7 | Drain — Drain connection (also bonded to exposed tab) |
| پن 8 | Drain — Drain connection (also bonded to exposed tab) |
| پن Tab | Drain (Exposed Pad) — Drain tab for thermal dissipation and electrical connection |
محفوظ آپریٹنگ ایریا - IAUT165N08S5N029ATMA2
عام استعمالات
IAUT165N08S5N029ATMA2 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Mild-Hybrid eMobility Power Stages, Battery Management System (BMS) Protection, High-Current Synchronous Rectification, Electric Power Steering (EPS) Motor Drive, Hot-Swap / OR-ing Controllers, Industrial Brushless DC (BLDC) Motor Drives.
48 V Mild-Hybrid eMobility Power Stages
The IAUT165N08S5N029ATMA2's 80 V V<sub>DS</sub> rating provides generous transient headroom above the 48 V nominal bus, while its 2.9 mΩ typical R<sub>DS(on)</sub> and 165 A continuous drain current suit the high-current half-bridge and full-bridge stages found in 48 V mild-hybrid belt-driven starter generators (BSG) and integrated starter generators (ISG). At 165 A continuous, conduction loss is roughly 84 W per device, which the PG-HSOF-8-1 package can dissipate given adequate PCB copper. The AEC-Q101 qualification allows direct deployment in safety-relevant automotive power paths. Compared with a 100 V part, the 80 V rating delivers lower R<sub>DS(on)</sub> for the same die area, improving converter efficiency by 1–2 percentage points. Use a gate driver with 10 V drive and place the gate resistor close to the device to control switching losses.
تجویز کردہ
Battery Management System (BMS) Protection
In 12 V, 24 V and 48 V battery-pack protection circuits, the IAUT165N08S5N029ATMA2 serves as a low-side disconnect switch that isolates the pack on fault events. Its 660 A pulsed drain current rating handles inrush transients during capacitor charging, while the 225 mJ avalanche rating (E<sub>AS</sub>) ensures survival if the load is disconnected while current is flowing. The 2.9 mΩ on-resistance minimises steady-state voltage drop and self-heating when carrying continuous 100–150 A battery currents. The Green-Product RoHS compliance and MSL1 rating simplify automotive qualification paperwork. Place the device with the drain tab on a 2 oz copper pour of at least 200 mm² to keep junction temperature rise below 50 °C at full load.
تجویز کردہ
High-Current Synchronous Rectification
When used as the synchronous-rectifier switch in a 48 V buck or boost converter, the IAUT165N08S5N029ATMA2's low 2.9 mΩ R<sub>DS(on)</sub> replaces Schottky diodes and reduces rectifier conduction loss by 50–70%. At 100 A output current, the MOSFET dissipates around 29 W versus ~80 W for an equivalent Schottky, easing thermal design significantly. The OptiMOS™ 5 process delivers low Q<sub>G</sub> and C<sub>oss</sub>, enabling switching frequencies of 100–250 kHz without driver-induced losses becoming dominant. The PG-HSOF-8-1 package's exposed tab provides a low-thermal-impedance path to the PCB copper, critical for sustained high-current operation. This makes the part particularly attractive for 48 V point-of-load converters in mild-hybrid and telecom applications.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
Electric power steering racks draw up to 80–120 A peak from a 12 V or 48 V bus during parking manoeuvres. The IAUT165N08S5N029ATMA2, with its 80 V V<sub>DS</sub> rating, AEC-Q101 qualification, and 165 A continuous current, fits comfortably in the three-phase inverter for the EPS motor. At 80 A RMS, conduction loss in each FET is roughly 19 W, well within the 167 W package rating when the PCB copper area is sized to 100 °C/W or better. The 100 % avalanche-tested rating is an additional safety margin for the regenerative-braking phase of the steering motor. The -55 °C to +175 °C operating temperature range covers under-the-hood ambient conditions.
تجویز کردہ
Hot-Swap / OR-ing Controllers
In server and telecom -48 V OR-ing and hot-swap applications, the IAUT165N08S5N029ATMA2 serves as the high-current switch that connects a redundant supply to the bus. The 80 V V<sub>DS</sub> rating safely holds off the -48 V rail with margin for transients. The 2.9 mΩ R<sub>DS(on)</sub> keeps steady-state dissipation low at full load; at 60 A forward current the part dissipates ~10 W, manageable with modest copper area. The 660 A pulsed drain current capability allows hot-swap controllers to detect and limit inrush without nuisance tripping. The AEC-Q101 rating provides additional reliability margin compared with industrial-only OR-ing FETs.
تجویز کردہ
Industrial Brushless DC (BLDC) Motor Drives
Industrial BLDC motor drives in the 24 V to 48 V class, such as conveyor systems, AGVs, and robotic actuators, use three-phase inverters built from low-R<sub>DS(on)</sub> N-channel MOSFETs. The IAUT165N08S5N029ATMA2's 165 A continuous current and 2.9 mΩ R<sub>DS(on)</sub> deliver enough headroom for 30–50 A RMS industrial motor current. Its PG-HSOF-8-1 package simplifies the inverter PCB by combining high current handling with surface-mount assembly, eliminating the through-hole heatsink mounting typical of TO-220 designs. The 175 °C maximum junction temperature allows the inverter to operate in enclosed industrial cabinets with limited airflow. Use a bootstrap-capable gate driver such as the IRS2304SPBF family for the high-side positions.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUT165N08S5N029ATMA2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUCN08S7L033ATMA1 | ISC151N08NM6ATMA1 | IPB100N04S4H2ATMA1 | NVMFS5C460NL | SiR680DP |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-HSOF-8-1 | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | SO-8FL (pin-compatible footprint) | PowerPAK SO-8 (pin-compatible footprint) |
| V<sub>DS</sub> (max) | 80 V | 80 V | 80 V | 40 V | 80 V | 80 V |
| R<sub>DS(on)</sub> (typ) | 2.9 mΩ | 3.3 mΩ (+13.8%) | 3.0 mΩ (+3.4%) | 1.0 mΩ (-65%) | 4.6 mΩ (+58.6%) | 3.5 mΩ (+20.7%) |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
| Technology Generation | OptiMOS 5 | OptiMOS 7 (newer) | OptiMOS 5 (same) | OptiMOS 5 | onsemi Shielded-Gate | Vishay TrenchFET Gen V |
| Approx. Unit Price (qty 1) | USD 4.20 | USD 4.50 (est., newer gen) | USD 4.10 (est.) | USD 3.80 (est.) | USD 1.20 (lower-grade, broader supply) | USD 1.80 |
اہم امتیازی خصوصیات
- Lowest R<sub>DS(on)</sub> in the OptiMOS 5 HSOF-8 family (بمقابلہIAUCN08S7L033ATMA1)
- Pin-compatible cross-brand alternative available (بمقابلہNVMFS5C460NL (onsemi))
- Automotive-grade OptiMOS 5 reliability (بمقابلہSiR680DP (Vishay))
ڈیزائن نوٹس
Estimated: at 165 A continuous drain current and 2.9 mΩ R<sub>DS(on)</sub>, conduction loss is approximately P = I² × R = 165² × 0.0029 = 78.9 W. With a 50 °C/W thermal resistance (achievable with 4 oz copper and 200 mm² drain-tab copper area), the junction temperature rise above ambient is around 50 K. Without sufficient PCB copper the part will thermally limit well below its 165 A rating. Always consult the datasheet SOA curves for your specific pulse profile.
The PG-HSOF-8-1 package's exposed tab is the primary drain connection and the primary thermal path. Stitch the source pins (2-4) and drain pins (5-8) with multiple vias to inner copper planes. Place the gate driver within 5 mm of the gate pin and use a 4.7-22 Ω gate resistor to control the 660 A pulsed current rise time. Avoid running the gate trace near the drain tab to minimise C<sub>gd</sub>-induced Miller coupling.
Do not assume the 80 V V<sub>DS</sub> rating is continuous in switching applications; inductive load switching transients can exceed this, so an RC snubber or TVS clamp is recommended for high-dV/dt nodes. The device is fully avalanche-rated at 225 mJ E<sub>AS</sub>, but repetitive avalanche events degrade the part. For high-current motor-drive applications, always confirm bidirectional TVS protection across the drain-source path.
تعمیل کی معلومات
Infineon designates the part as a Green Product (RoHS compliant) with MSL1 rating up to 260°C peak reflow. AEC-Q101 automotive qualified (note: AEC-Q101 for discrete semiconductors, not AEC-Q100 which is for ICs).
