IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
MPN: IPD50N06S409ATMA2 ✓ فعالIPD50N06S409ATMA2 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between source and drain. N-channel MOSFETs like this Infineon OptiMOS device offer lower on-resistance per unit silicon area than equivalent P-channel devices because electrons have higher mobility than holes. Within the broader taxonomy, a discrete MOSFET sits under discrete semiconductors → transistors → power transistors → power MOSFETs → N-channel power MOSFETs. The OptiMOS family from Infineon targets automotive, industrial, and computing power conversion with a strong focus on switching loss reduction.
Key features include a maximum drain-source on-resistance of 9 mΩ at VGS=10 V, low gate charge Qg for fast switching, integrated body diode for inductive load commutation, and an operating junction temperature range from -55 °C to +175 °C. The AEC-Q101 automotive qualification supports under-hood and chassis deployment where extended thermal and vibration stress are present. The PG-TO252-3-11 (DPAK) surface-mount package provides a low thermal resistance path through the tab to the PCB copper pour.
In typical applications, the IPD50N06S409ATMA2 is used as the high-side or low-side switch in solenoid drivers, valve controllers, LED lighting drivers, motor pre-drivers, and DC-DC converter primary-side switches. The 60 V rating provides ample headroom above 24 V automotive transients while keeping R<sub>DS(on)</sub> low. A trade-off note: at high switching frequencies the gate charge losses can dominate, so a driver with sufficient peak current (typically 1 A or more) is recommended to keep rise/fall times short and limit ringing on the gate-source loop.
کے لیے ڈراپ اِن متبادل IPD50N06S409ATMA2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD50N06S409ATMA2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, Drain-Source Voltage (VDS), MSL Level, Gate Threshold Voltage (VGS(th)).
IPB35N10S3L26ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB081N06L3GATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD50N04S408ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB090N06N3G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC019N04LSTATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTD5867N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD50N06S409ATMA2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ |
| Power Dissipation (Pd) at Tc | 71 W |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| پیکیج | PG-TO252-3-11 (DPAK) |
| پن کی تعداد | 3 (2 + Tab) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant |
IPD50N06S409ATMA2 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; controls drain-source conduction |
| پن 2 | Source — Source terminal; common reference for gate drive and load return |
| پن 3 | Drain (Tab) — Drain terminal and thermal pad; must be soldered to PCB copper pour for heatsinking |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IPD50N06S409ATMA2 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive Solenoid Driver (12V / 24V), Automotive LED Lighting Driver, Motor Pre-Driver / H-Bridge Switch, DC-DC Converter Primary Switch, Battery Management Protection Switch, Industrial Valve and Relay Replacement.
Automotive Solenoid Driver (12V / 24V)
The IPD50N06S409ATMA2 is well suited as the low-side switch for automotive solenoid drivers including transmission shift solenoids, EGR valves, and purge valves operating on 12 V or 24 V rails. Its 9 mΩ R<sub>DS(on)</sub> at VGS=10 V minimizes conduction loss during PWM holding current, while the 60 V VDS rating provides headroom against 24 V load-dump transients that can momentarily reach ~36 V. The DPAK tab solders to the PCB copper pour, providing thermal dissipation for the 71 W rated power. AEC-Q101 qualification supports under-hood deployment where ambient temperatures reach 125 °C. Designers typically operate at 1-5 kHz PWM with a gate driver sourcing 1 A peak to ensure fast switching.
تجویز کردہ
Automotive LED Lighting Driver
In automotive front-light and rear-light LED drivers, the IPD50N06S409ATMA2 functions as the high-side or low-side PWM switch for constant-current regulation of LED strings. Its 50 A continuous drain rating supports multi-LED parallel configurations while the 9 mΩ on-resistance keeps conduction losses below 5 W at typical 20 A drive currents, eliminating the need for forced-air cooling in lamp housings. The AEC-Q101 qualification ensures compliance with automotive headlamp reliability requirements over 10-year service life. Low gate charge (Qg typical not published, but OptiMOS family known for low Qg) supports PWM dimming above 1 kHz without excessive driver losses.
تجویز کردہ
Motor Pre-Driver / H-Bridge Switch
The IPD50N06S409ATMA2 serves as a half-bridge switch in automotive brushed DC motor pre-drivers for window lift, seat adjustment, and wiper systems. Two IPD50N06S409ATMA2 devices form an H-bridge delivering up to 50 A peak per leg with 9 mΩ conduction loss per switch, supporting motor stall currents up to 30 A without thermal shutdown. The 60 V VDS rating provides robust avalanche capability during motor commutator switching transients. The DPAK package enables compact PCB layouts where multiple parallel bridges (for dual-motor systems) must fit on a single ECU board.
تجویز کردہ
DC-DC Converter Primary Switch
In 12 V to 24 V buck or boost DC-DC converters for automotive point-of-load applications, the IPD50N06S409ATMA2 operates as the primary-side switch at switching frequencies of 50-200 kHz. Its 9 mΩ R<sub>DS(on)</sub> and OptiMOS-family low gate charge minimize switching losses, achieving efficiencies above 95% in 12 V-to-5 V buck topologies at 10-20 A loads. The 60 V rating accommodates 24 V input rails with standard automotive transient protection. The DPAK package provides sufficient thermal dissipation for continuous 5-10 A operation with a 1 in² copper pour, eliminating the need for external heatsinks in space-constrained ECU modules.
تجویز کردہ
Battery Management Protection Switch
The IPD50N06S409ATMA2 functions as the reverse-battery and over-current protection FET in 12 V automotive battery management systems. Its 50 A continuous rating and 60 V VDS rating handle jump-start and load-dump transients on the battery rail while its 9 mΩ R<sub>DS(on)</sub> keeps protection path loss under 250 mW at 5 A standby current. The DPAK package mounts directly to the PCB copper pour, enabling compact BMS modules for start-stop micro-hybrid vehicles. AEC-Q101 qualification ensures reliability over 15-year automotive service life.
تجویز کردہ
Industrial Valve and Relay Replacement
In industrial 24 V solenoid valve and electromechanical relay replacement designs, the IPD50N06S409ATMA2 provides a solid-state switching alternative with 50x longer service life than mechanical relays. Its 60 V VDS rating covers 24 V industrial rails with 150% over-voltage transients, and the 9 mΩ R<sub>DS(on)</sub> ensures low-power dissipation in continuous-duty applications like process control valve arrays. The DPAK package supports PCB mounting that directly replaces legacy relay footprints with proper thermal design, and AEC-Q101 qualification provides additional robustness margin for industrial environments with vibration and temperature cycling.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD50N06S409ATMA2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB35N10S3L26ATMA1 | IPB081N06L3GATMA1 | IPD50N04S408ATMA1 | IPB090N06N3G | NTD5867N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO262-3 (D²PAK) - larger | DPAK (TO-252) - same |
| VDS (max) | 60 V | 100 V | 60 V | 40 V | 60 V | 60 V |
| Continuous Drain Current (Tc) | 50 A | 35 A | 50 A | 50 A | 90 A | 50 A |
| R<sub>DS(on)</sub> max @ VGS=10V | 9 mΩ | 35 mΩ | 8.1 mΩ | 8 mΩ | 9 mΩ | 10 mΩ |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Family | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | onsemi Trench |
اہم امتیازی خصوصیات
- Lower on-resistance than voltage-overspecified alternatives (بمقابلہIPB35N10S3L26ATMA1)
- Higher voltage margin than 40 V alternatives (بمقابلہIPD50N04S408ATMA1)
- Higher continuous current than DPAK-class alternatives (بمقابلہIPB081N06L3GATMA1)
- Established automotive second-source via cross-brand equivalents (بمقابلہNTD5867N (onsemi))
ڈیزائن نوٹس
Estimated: at VGS=10 V, ID=25 A continuous load, conduction loss P_cond = 9 mΩ × 25² ≈ 5.6 W. The DPAK package with a 1 oz copper pour of 1 in² gives theta_JA ≈ 50 °C/W, leading to a junction temperature rise of 5.6 × 50 = 280 °C above ambient - this exceeds the 175 °C maximum. To stay within safe operating area at 25 A continuous, use at least 2 in² of 1 oz copper or reduce switching frequency to limit total dissipation. Always verify thermal performance with a thermocouple measurement on the tab in worst-case operating conditions.
The DPAK tab serves as both the drain electrical connection and the primary thermal path. Solder the tab to a copper pour of at least 1 in² (2 oz copper preferred for best thermal performance). Use thermal vias (typically 9-12 vias of 0.3 mm diameter) under the tab to connect top copper to inner plane layers for additional heat spreading. Keep the gate-trace short (under 25 mm) and route it away from the switching-node (drain) trace to minimize gate-to-drain coupling noise. Add a 10 kΩ gate-to-source pull-down resistor to prevent false turn-on from Miller coupling during switching transients.
Do not exceed VGS ratings: VGS(max) is typically ±20 V for this part. Driving the gate above 20 V will destroy the gate oxide. Use a gate driver IC with proper VGS clamping, or add a Zener diode (e.g., 16 V) from gate to source for protection if a discrete gate drive circuit is used. Also note that the IPD50N06S409ATMA2 has a body diode with reverse recovery characteristics - if used in a half-bridge with hard-switching, parallel Schottky diodes may be needed to reduce dead-time losses. For 24 V systems with frequent load-dump events, verify the avalanche rating is not exceeded by adding a TVS diode across the drain-source.
When switching at frequencies above 100 kHz or with rise times below 50 ns, gate-to-drain Miller coupling can cause gate voltage spikes that turn on the MOSFET partially during off-state. Use a gate-source resistor of 10 kΩ to keep the gate firmly held low during switching, and add a small ferrite bead or gate resistor (10-100 Ω) in series with the gate to dampen ringing. Keep the gate-drive loop area minimal by placing the gate driver IC close to the MOSFET gate pin. For high-current switching, use a kelvin source connection to separate the gate-drive return from the power-source return path.
تعمیل کی معلومات
AEC-Q101 (automotive MOSFET grade) qualified per distributor listings and Infineon product page. RoHS compliant per distributor listings.
