IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon
MPN: IGB30N60H3ATMA1 ✓ فعالIGB30N60H3ATMA1 جائزہ
An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss gate of a MOSFET with the high-current, low-saturation-voltage capability of a bipolar transistor. In the broader power-semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages and higher switching frequencies) and thyristors (used at very high currents); it is the workhorse device for medium- to high-voltage switching converters, motor drives, and inductive heating inverters.
Key features of the IGB30N60H3ATMA1 include a collector-emitter breakdown voltage of 600 V, a continuous DC collector current rating of 60 A (pulsed), low saturation voltage VCE(sat) of approximately 1.95 V, and a nominal turn-off time of 262 ns. The trench field-stop structure produces a square reverse-biased safe operating area (RBSOA) and short-circuit ruggedness, while the low gate charge and intrinsic anti-parallel diode simplify half-bridge design.
Typical applications for the IGB30N60H3ATMA1 include uninterruptible power supplies (UPS), solar inverters, welding converters, induction heating, switch-mode power supplies (SMPS) with hard-switched topologies, and industrial motor drives. The D2PAK footprint is widely accepted by designers building high-density PFC and inverter stages that require both thermal performance and SMT assembly.
When designing with this device, ensure the gate-drive voltage swings between -15 V and +15 V (or at minimum 0 V to +15 V with a negative turn-off bias for hard-switching topologies). The exposed metal tab of the D2PAK must be soldered to a sufficient copper area to keep junction temperature within ratings; at full 60 A conduction the device dissipates well over 100 W and demands careful thermal management.
This page synthesizes distributor stock and pricing, same-family TRENCHSTOP drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving the engineer a single decision-ready reference.
کے لیے ڈراپ اِن متبادل IGB30N60H3ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IGB30N60H3ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Mounting Type, Gate-Emitter Voltage (VGE), Maximum Power Dissipation (Ptot), Technology.
IGB15N60H3ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGW30N60H3FKSA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →STGB30H60DFB
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IKD15N60RFATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IGB30N60H3ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | 60 A |
| پاور ڈسپیشن (Ptot) | 187 W |
| Gate-Emitter Voltage (VGE) | +/- 20 V |
| کلیکٹر-ایمیٹر سیچوریشن وولٹیج (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Turn-Off Time (toff) | 262 ns (nominal) |
| Technology | Trench Field Stop |
| Configuration | Single IGBT |
| پیکیج | PG-TO263-3-2 (D2PAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ جنکشن درجہ حرارت | -40C to +175C |
| Storage Temperature | -55C to +150C |
| Terminal Form | Gull Wing |
| پن کی تعداد | 3 (2 + Tab) |
| RoHS اسٹیٹس | Compliant |
| Switching Behavior | MOSFET-like turn-off |
IGB30N60H3ATMA1 پن کنفیگریشن
| پن 1 | Gate (G) — MOSFET-style gate input; drive with +15 V on, -5 to -15 V off |
| پن 2 | Collector (C) — Main current terminal; internally connected to the metal tab |
| پن 3 | Emitter (E) — Source reference for gate drive and main current return |
| پن Tab | Collector / Heatsink — Electrically tied to Pin 2 (Collector); solder to PCB copper for thermal dissipation |
Reverse Biased محفوظ آپریٹنگ ایریا (RBSOA)
عام استعمالات
IGB30N60H3ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Uninterruptible Power Supply (UPS) Inverter, Solar Inverter Boost and H-Bridge Stages, Induction Heating Resonant Inverter, Industrial Motor Drive Inverter, Welding Converter Power Stage, Switch-Mode Power Supply (SMPS) PFC Stage.
Uninterruptible Power Supply (UPS) Inverter
The IGB30N60H3ATMA1 is well-suited for 1-5 kVA online UPS inverter stages operating from a 400 V rectified DC bus. Its 600 V collector-emitter breakdown provides substantial margin above the typical 325 V bus peak, while the 60 A continuous current rating supports inverter designs up to 5 kW. The trench field-stop structure delivers MOSFET-like turn-off behavior, which reduces dead-time cross-conduction losses in the 20-50 kHz switching range typical of modern UPS designs.
تجویز کردہ
Solar Inverter Boost and H-Bridge Stages
Residential and small-commercial solar inverters use the IGB30N60H3ATMA1 in PFC boost and full-bridge inverter sections. Its 600 V breakdown handles the 400 V DC bus with adequate transient headroom, and the 60 A continuous current supports 5-10 kW designs. The 1.95 V VCE(sat) minimizes conduction losses during peak power point tracking, while the fast 262 ns turn-off time enables 16-32 kHz switching for compact magnetics in transformerless string inverter topologies.
تجویز کردہ
Induction Heating Resonant Inverter
The IGB30N60H3ATMA1 is a strong choice for induction cooking and industrial induction heating inverters operating in the 20-100 kHz resonant switching range. Its trench field-stop structure provides low turn-off losses critical for zero-voltage switching (ZVS) resonant topologies. The 187 W power dissipation rating and D2PAK footprint with substantial copper heatsinking enable continuous 30-40 A operation in the resonant tank circuit, supporting cooking appliances and metal hardening equipment up to 5 kW.
تجویز کردہ
Industrial Motor Drive Inverter
Three-phase industrial motor drives for fans, pumps, and small servo systems use the IGB30N60H3ATMA1 in 400 V class inverter stages. The 600 V rating handles the rectified 230/400 V AC bus with margin, and the 60 A continuous current supports 7.5-15 kW motor drives. The MOSFET-like turn-off behavior simplifies dead-time management, while the rugged RBSOA provides short-circuit protection during motor startup transients and load dump events.
تجویز کردہ
Welding Converter Power Stage
Inverter-based welding machines use the IGB30N60H3ATMA1 in the primary H-bridge or full-bridge converter stage that feeds the high-frequency welding transformer. Its 60 A continuous current and 187 W dissipation support 200-400 A welding output designs. The fast switching and low VCE(sat) balance conduction and switching losses in the 20-100 kHz hard-switched primary, while the rugged short-circuit withstand capability handles the arc-strike transients inherent to MMA/TIG welding processes.
تجویز کردہ
Switch-Mode Power Supply (SMPS) PFC Stage
Power factor correction (PFC) boost stages in 1-3 kW SMPS designs use the IGB30N60H3ATMA1 as the boost switch when the output voltage is 400 V class and current requirements exceed 15 A. Its low VCE(sat) reduces conduction losses in continuous conduction mode (CCM), while the trench field-stop technology provides fast turn-off for the hard-switched boost topology. The D2PAK footprint enables compact SMT construction with adequate copper area for thermal management.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IGB30N60H3ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IGB15N60H3ATMA1 | IGW30N60H3 | STGB30H60DFB | IKD15N60RFATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | TO-247 (through-hole) | TO-263 (D2PAK) - same | PG-TO252-3 (DPAK) |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (IC, TC=25C) | 60 A | 31 A | 60 A | 60 A | 30 A |
| Technology | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 | TRENCHSTOP IGBT3 | HB2 Trench Field Stop | TRENCHSTOP IGBT3 |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole | Surface Mount | Surface Mount |
اہم امتیازی خصوصیات
- Industry-leading TRENCHSTOP IGBT3 trench field-stop technology (بمقابلہSTGB30H60DFB)
- Higher continuous current rating in same D2PAK footprint (بمقابلہIGB15N60H3ATMA1)
- Surface-mount D2PAK package optimized for automated assembly (بمقابلہIGW30N60H3)
ڈیزائن نوٹس
Estimated: At full 60 A conduction with VCE(sat)=1.95 V, conduction loss alone is approximately 117 W. With switching losses in a 20 kHz hard-switched PFC stage adding 10-20 W, total dissipation reaches 130-140 W. The PG-TO263-3-2 (D2PAK) package has a junction-to-ambient thermal resistance around 40 C/W on a 1 sq inch copper pour; a heatsink with thermal resistance below 0.5 C/W plus forced-air cooling is required for full-current operation. Always calculate junction temperature rise as Tj = Pd * (RthJC + RthCS + RthSA) + Tambient, and ensure Tj remains below 150C for reliable long-term operation.
The D2PAK exposed metal tab (Pin 2, Collector) must be soldered directly to a sufficient PCB copper pour to achieve the thermal dissipation ratings. Recommended minimum copper area is 1 sq inch on the top layer plus thermal vias to inner planes. Keep the gate-drive traces short (under 1 inch) and route them away from the high-current collector traces to minimize dv/dt induced gate-voltage spikes. Place the gate-driver IC as close as possible to the gate pin to minimize parasitic inductance in the gate loop.
Do not operate the IGB30N60H3ATMA1 with VGE below the gate-emitter threshold; if the gate is left floating during power-up, the IGBT may partially turn on and cause shoot-through in half-bridge configurations. Always use a proper gate-driver IC with defined logic inputs, and provide a pull-down resistor (10 kohm typical) on the gate pin to ensure a defined off-state during transient conditions. Exceeding VGE=+/-20 V absolute maximum can destroy the gate oxide; clamp the gate voltage with a 15 V Zener diode for protection.
The high dv/dt (typically 5-10 kV/us) of the IGB30N60H3ATMA1 during turn-off can induce voltage spikes on the gate due to parasitic miller capacitance (Cres). Use a negative gate-drive bias (-5 to -15 V) for hard-switched topologies to prevent parasitic turn-on, and add a small gate-source resistor (10-100 ohm) to dampen ringing. Snubber circuits (RCD or RCD-plus-diode) across the collector-emitter are often required in half-bridge configurations to limit voltage overshoot below the 600 V breakdown rating.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part is designed for industrial-grade applications, not automotive. Industrial operating junction temperature range is -40C to +175C.
