IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon
MPN: IGB30N60H3ATMA1 ✓ Hoạt độngIGB30N60H3ATMA1 Tóm tắt
An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss gate of a MOSFET with the high-current, low-saturation-voltage capability of a bipolar transistor. In the broader power-semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages and higher switching frequencies) and thyristors (used at very high currents); it is the workhorse device for medium- to high-voltage switching converters, motor drives, and inductive heating inverters.
Key features of the IGB30N60H3ATMA1 include a collector-emitter breakdown voltage of 600 V, a continuous DC collector current rating of 60 A (pulsed), low saturation voltage VCE(sat) of approximately 1.95 V, and a nominal turn-off time of 262 ns. The trench field-stop structure produces a square reverse-biased safe operating area (RBSOA) and short-circuit ruggedness, while the low gate charge and intrinsic anti-parallel diode simplify half-bridge design.
Typical applications for the IGB30N60H3ATMA1 include uninterruptible power supplies (UPS), solar inverters, welding converters, induction heating, switch-mode power supplies (SMPS) with hard-switched topologies, and industrial motor drives. The D2PAK footprint is widely accepted by designers building high-density PFC and inverter stages that require both thermal performance and SMT assembly.
When designing with this device, ensure the gate-drive voltage swings between -15 V and +15 V (or at minimum 0 V to +15 V with a negative turn-off bias for hard-switching topologies). The exposed metal tab of the D2PAK must be soldered to a sufficient copper area to keep junction temperature within ratings; at full 60 A conduction the device dissipates well over 100 W and demands careful thermal management.
This page synthesizes distributor stock and pricing, same-family TRENCHSTOP drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving the engineer a single decision-ready reference.
Bộ thay thế dễ dàng lắp đặt cho IGB30N60H3ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IGB30N60H3ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Mounting Type, Gate-Emitter Voltage (VGE), Maximum Power Dissipation (Ptot), Technology.
IGB15N60H3ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IGW30N60H3FKSA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →STGB30H60DFB
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKD15N60RFATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IGB30N60H3ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | 60 A |
| Tiêu hao điện năng (Ptot) | 187 W |
| Gate-Emitter Voltage (VGE) | +/- 20 V |
| N Nap-Emit (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Turn-Off Time (toff) | 262 ns (nominal) |
| Technology | Trench Field Stop |
| Configuration | Single IGBT |
| Hộp | PG-TO263-3-2 (D2PAK) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ mối nối hoạt động | -40C to +175C |
| Storage Temperature | -55C to +150C |
| Terminal Form | Gull Wing |
| Số chân | 3 (2 + Tab) |
| Trạng thái RoHS | Compliant |
| Switching Behavior | MOSFET-like turn-off |
Cấu hình chân IGB30N60H3ATMA1
| Chân 1 | Gate (G) — MOSFET-style gate input; drive with +15 V on, -5 to -15 V off |
| Chân 2 | Collector (C) — Main current terminal; internally connected to the metal tab |
| Chân 3 | Emitter (E) — Source reference for gate drive and main current return |
| Chân Tab | Collector / Heatsink — Electrically tied to Pin 2 (Collector); solder to PCB copper for thermal dissipation |
Reverse Biased Khu vực hoạt động an toàn (RBSOA)
Ứng dụng tiêu biểu
IGB30N60H3ATMA1 phù hợp cho 6 Áp dụngs: Uninterruptible Power Supply (UPS) Inverter, Solar Inverter Boost and H-Bridge Stages, Induction Heating Resonant Inverter, Industrial Motor Drive Inverter, Welding Converter Power Stage, Switch-Mode Power Supply (SMPS) PFC Stage.
Uninterruptible Power Supply (UPS) Inverter
The IGB30N60H3ATMA1 is well-suited for 1-5 kVA online UPS inverter stages operating from a 400 V rectified DC bus. Its 600 V collector-emitter breakdown provides substantial margin above the typical 325 V bus peak, while the 60 A continuous current rating supports inverter designs up to 5 kW. The trench field-stop structure delivers MOSFET-like turn-off behavior, which reduces dead-time cross-conduction losses in the 20-50 kHz switching range typical of modern UPS designs.
Được đề xuất
Solar Inverter Boost and H-Bridge Stages
Residential and small-commercial solar inverters use the IGB30N60H3ATMA1 in PFC boost and full-bridge inverter sections. Its 600 V breakdown handles the 400 V DC bus with adequate transient headroom, and the 60 A continuous current supports 5-10 kW designs. The 1.95 V VCE(sat) minimizes conduction losses during peak power point tracking, while the fast 262 ns turn-off time enables 16-32 kHz switching for compact magnetics in transformerless string inverter topologies.
Được đề xuất
Induction Heating Resonant Inverter
The IGB30N60H3ATMA1 is a strong choice for induction cooking and industrial induction heating inverters operating in the 20-100 kHz resonant switching range. Its trench field-stop structure provides low turn-off losses critical for zero-voltage switching (ZVS) resonant topologies. The 187 W power dissipation rating and D2PAK footprint with substantial copper heatsinking enable continuous 30-40 A operation in the resonant tank circuit, supporting cooking appliances and metal hardening equipment up to 5 kW.
Được đề xuất
Industrial Motor Drive Inverter
Three-phase industrial motor drives for fans, pumps, and small servo systems use the IGB30N60H3ATMA1 in 400 V class inverter stages. The 600 V rating handles the rectified 230/400 V AC bus with margin, and the 60 A continuous current supports 7.5-15 kW motor drives. The MOSFET-like turn-off behavior simplifies dead-time management, while the rugged RBSOA provides short-circuit protection during motor startup transients and load dump events.
Được đề xuất
Welding Converter Power Stage
Inverter-based welding machines use the IGB30N60H3ATMA1 in the primary H-bridge or full-bridge converter stage that feeds the high-frequency welding transformer. Its 60 A continuous current and 187 W dissipation support 200-400 A welding output designs. The fast switching and low VCE(sat) balance conduction and switching losses in the 20-100 kHz hard-switched primary, while the rugged short-circuit withstand capability handles the arc-strike transients inherent to MMA/TIG welding processes.
Được đề xuất
Switch-Mode Power Supply (SMPS) PFC Stage
Power factor correction (PFC) boost stages in 1-3 kW SMPS designs use the IGB30N60H3ATMA1 as the boost switch when the output voltage is 400 V class and current requirements exceed 15 A. Its low VCE(sat) reduces conduction losses in continuous conduction mode (CCM), while the trench field-stop technology provides fast turn-off for the hard-switched boost topology. The D2PAK footprint enables compact SMT construction with adequate copper area for thermal management.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IGB30N60H3ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IGB15N60H3ATMA1 | IGW30N60H3 | STGB30H60DFB | IKD15N60RFATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | TO-247 (through-hole) | TO-263 (D2PAK) - same | PG-TO252-3 (DPAK) |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (IC, TC=25C) | 60 A | 31 A | 60 A | 60 A | 30 A |
| Technology | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 | TRENCHSTOP IGBT3 | HB2 Trench Field Stop | TRENCHSTOP IGBT3 |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- Industry-leading TRENCHSTOP IGBT3 trench field-stop technology (vsSTGB30H60DFB)
- Higher continuous current rating in same D2PAK footprint (vsIGB15N60H3ATMA1)
- Surface-mount D2PAK package optimized for automated assembly (vsIGW30N60H3)
Ghi chú thiết kế
Estimated: At full 60 A conduction with VCE(sat)=1.95 V, conduction loss alone is approximately 117 W. With switching losses in a 20 kHz hard-switched PFC stage adding 10-20 W, total dissipation reaches 130-140 W. The PG-TO263-3-2 (D2PAK) package has a junction-to-ambient thermal resistance around 40 C/W on a 1 sq inch copper pour; a heatsink with thermal resistance below 0.5 C/W plus forced-air cooling is required for full-current operation. Always calculate junction temperature rise as Tj = Pd * (RthJC + RthCS + RthSA) + Tambient, and ensure Tj remains below 150C for reliable long-term operation.
The D2PAK exposed metal tab (Pin 2, Collector) must be soldered directly to a sufficient PCB copper pour to achieve the thermal dissipation ratings. Recommended minimum copper area is 1 sq inch on the top layer plus thermal vias to inner planes. Keep the gate-drive traces short (under 1 inch) and route them away from the high-current collector traces to minimize dv/dt induced gate-voltage spikes. Place the gate-driver IC as close as possible to the gate pin to minimize parasitic inductance in the gate loop.
Do not operate the IGB30N60H3ATMA1 with VGE below the gate-emitter threshold; if the gate is left floating during power-up, the IGBT may partially turn on and cause shoot-through in half-bridge configurations. Always use a proper gate-driver IC with defined logic inputs, and provide a pull-down resistor (10 kohm typical) on the gate pin to ensure a defined off-state during transient conditions. Exceeding VGE=+/-20 V absolute maximum can destroy the gate oxide; clamp the gate voltage with a 15 V Zener diode for protection.
The high dv/dt (typically 5-10 kV/us) of the IGB30N60H3ATMA1 during turn-off can induce voltage spikes on the gate due to parasitic miller capacitance (Cres). Use a negative gate-drive bias (-5 to -15 V) for hard-switched topologies to prevent parasitic turn-on, and add a small gate-source resistor (10-100 ohm) to dampen ringing. Snubber circuits (RCD or RCD-plus-diode) across the collector-emitter are often required in half-bridge configurations to limit voltage overshoot below the 600 V breakdown rating.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part is designed for industrial-grade applications, not automotive. Industrial operating junction temperature range is -40C to +175C.
