IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK
MPN: IPD60R1K0PFD7SAUMA1 ✓ فعالIPD60R1K0PFD7SAUMA1 جائزہ
A superjunction MOSFET is a high-voltage power switch built on a deep-trench charge-balancing structure that lets designers push breakdown voltage into the 500-700 V range while keeping R DS(on) far lower than conventional planar MOSFETs of the same die area. CoolMOS™ PFD7 sits in the broader Infineon CoolMOS™ family — a lineage of superjunction (SJ) MOSFETs — under the umbrella of high-voltage discrete semiconductors and ultimately power-management ICs. This platform iteration optimizes switching loss, body-diode ruggedness, and ease-of-use for hard-switching topologies.
Key specifications include 600 V drain-source breakdown, 4.7 A continuous ID (TC), 1 Ω R DS(on) max at VGS=10V, a 230 pF output capacitance (Coss) at 400 V, and an ultra-low gate charge QG of 6 nC. The device is fully avalanche-rated and offers fast body-diode recovery, simplifying snubber design in bridge topologies. The PG-TO252-3 package provides a low thermal resistance path when soldered to a sufficiently large copper pad.
The PFD7 architecture combines the fast-switching benefits of a 2nd-generation superjunction MOSFET with state-of-the-art ease-of-use and price/performance for consumer markets. Its integrated Zener-protected gate and optimized internal source-bonding wire layout enable excellent dv/dt immunity, while the low Qoss reduces turn-on losses in resonant and soft-switching converters. The technology meets the highest efficiency standards and supports high power density, enabling very slim designs.
Typical applications include AC-DC chargers and adapters (flyback and quasi-resonant), motor drives for small white goods and pumps, LED lighting drivers, auxiliary and standby SMPS in appliances, and cost-optimized industrial power conversion. Designers select this part when balancing high-voltage blocking, low conduction loss, and small form factor in price-sensitive products.
When designing with this device, place the gate-drive resistor close to the gate pin to suppress parasitic ringing, and ensure the drain pad has at least 1 square inch of continuous copper for proper thermal dissipation. Use a 10V gate drive for full enhancement into the rated R DS(on) curve. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IPD60R1K0PFD7SAUMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD60R1K0PFD7SAUMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), Mounting Type, RoHS Status.
IPD60R600PFD7SAUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD60R1K0PFD7SATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD60R1K0PFD7SAUMA2
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD60R360PFD7SAUMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPN70R2K0P7SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD60R1K0PFD7SAUMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC | 4.7 A |
| Power Dissipation (PD) at TC | 26 W |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) |
| Gate Charge (QG) | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | 230 pF @ 400 V |
| پیکیج | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (TJ) |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) |
| RoHS اسٹیٹس | Compliant |
| Series | CoolMOS PFD7 consumer / superjunction |
IPD60R1K0PFD7SAUMA1 پن کنفیگریشن
| پن 1 | Gate (G) — MOSFET gate input; drive with 10V for full enhancement |
| پن 2 | Drain (D) — MOSFET drain (also connected to metal tab); high-voltage node |
| پن 3 | Source (S) — MOSFET source; typically tied to circuit ground / sense resistor |
محفوظ آپریٹنگ ایریا (DC) — PG-TO252-3 (DPAK) on 1 sq.in. copper
عام استعمالات
IPD60R1K0PFD7SAUMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: AC-DC Flyback Chargers and Adapters, LED Lighting Drivers, Small Motor Drives (White Goods / Pumps), Auxiliary and Standby SMPS, Cost-Optimized Industrial Power Conversion, Universal-Input Quasi-Resonant Converters.
AC-DC Flyback Chargers and Adapters
The IPD60R1K0PFD7SAUMA1 is an excellent primary-side switch for 5-15 W universal-input AC-DC flyback adapters targeting smartphone chargers and USB-PD applications. Its 600 V V DSS provides full margin over the 380-400 VDC bus that arises from rectified 230 VAC, while the 1 Ω RDS(on) keeps conduction loss in the primary switch under 1.5% at full load. The PFD7 family's fast body-diode recovery and 6 nC total gate charge reduce switching loss compared to older C6 platforms, enabling >90% efficiency at 90 VAC input. Recommended companion ICs include the XDPL8105 LED-driver controller and ICE5QR0680AGXUMA1 quasi-resonant flyback controller.
تجویز کردہ
LED Lighting Drivers
The IPD60R1K0PFD7SAUMA1 powers LED lighting drivers in the 10-20 W range, including downlights, panel lights, and bulb drivers operating from universal mains input. Its 600 V breakdown withstands line-transient surges up to 2 kV (with MOV clamping), and the integrated Zener-protected gate eliminates the need for external gate protection in cost-optimized designs. The 1 Ω RDS(on) enables slim linear-driver form factors where PCB area is constrained. The low Qoss of 230 pF at 400 V supports high-frequency switching up to 200 kHz in resonant LED driver topologies, enabling smaller magnetics.
تجویز کردہ
Small Motor Drives (White Goods / Pumps)
The IPD60R1K0PFD7SAUMA1 serves as the high-voltage switch in low-power universal motor drive circuits for white-goods applications such as small pumps, fans, and appliance motor controllers. Its 4.7 A continuous ID rating and 26 W power dissipation support inverter stages up to approximately 100 W input power. The superjunction PFD7 architecture provides superior body-diode ruggedness during motor back-EMF commutation events, reducing failure rates versus conventional planar MOSFETs in hard-switched bridge topologies.
تجویز کردہ
Auxiliary and Standby SMPS
The IPD60R1K0PFD7SAUMA1 is well-suited to auxiliary and standby power supplies in appliances, set-top boxes, and IoT gateways where a 5-15 W isolated converter supplies standby rails from rectified mains. Its 600 V breakdown comfortably handles wide-input bus variations (90-265 VAC), while the 1 Ω RDS(on) keeps standby consumption under 100 mW at no-load. The DPAK package enables compact flyback or quasi-resonant converters with primary-side switch footprints under 50 mm², supporting slim industrial design targets.
تجویز کردہ
Cost-Optimized Industrial Power Conversion
Industrial SMPS designs under 25 W — including HVAC control boards, sensor interfaces, and metering equipment — benefit from the IPD60R1K0PFD7SAUMA1's balance of voltage rating, RDS(on), and consumer-grade pricing. The PFD7 platform meets highest efficiency standards and supports high power density, enabling compact DIN-rail or panel-mount converter modules. Designers can leverage the DPAK package's standard land pattern for easy PCB layout migration when transitioning from older 600 V planar MOSFETs to this superjunction platform.
تجویز کردہ
Universal-Input Quasi-Resonant Converters
The IPD60R1K0PFD7SAUMA1 is purpose-built for quasi-resonant (QR) flyback converters targeting universal-input AC-DC designs. Its low Coss of 230 pF at 400 V enables higher switching frequencies at the QR valley with reduced switching loss, while the 6 nC gate charge supports valley-skipping operation to maintain efficiency across the full load range. The combination of fast body-diode recovery and integrated Zener gate protection simplifies QR topology design for 10-25 W adapters and consumer electronics power supplies.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD60R1K0PFD7SAUMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD60R600PFD7SAUMA1 | IPD60R360PFD7SAUMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3-equivalent (SOT-223) - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V - same | 600 V - same | 700 V (+17%) |
| On-Resistance (RDS(on)) max @ 10V | 1.0 Ω | 0.6 Ω (-40%) | 0.36 Ω (-64%) | 2.0 Ω (+100%) |
اہم امتیازی خصوصیات
- Cost-optimized superjunction pricing for consumer markets (بمقابلہIPD60R600PFD7SAUMA1)
- Lower on-resistance at the cost of higher gate charge (بمقابلہIPD60R600PFD7SAUMA1)
- 600 V rating optimized for universal AC input (بمقابلہIPN70R2K0P7SATMA1 (700V))
ڈیزائن نوٹس
At continuous 4.7 A drain current and 26 W power dissipation rating, the PG-TO252-3 (DPAK) package requires a substantial copper pour on the drain tab to stay within thermal limits. With a typical theta_JA of ~62 C/W on a 1-square-inch copper pour (estimated from standard DPAK thermal data), the junction-to-ambient thermal resistance gives a 10-15 C/W rise per watt of dissipation. Estimated: at 2 W power dissipation the junction rises ~30 C above ambient; at 5 W it rises ~75 C. A 0.5-1 sq.in. continuous copper area is mandatory; below 0.3 sq.in. the part will thermally limit long before reaching the rated current.
Keep the gate-drive loop (gate-pin to driver-ground) as small as possible — typical loop area should be under 0.5 cm². Place a 10-100 Ω gate-series resistor close to the gate pin to dampen parasitic ringing and limit peak dv/dt-induced current injection into the gate driver. The drain pad must be a continuous copper island with thermal vias to the bottom layer to spread heat. Keep the switching-node trace away from sensitive analog traces (sense resistors, feedback paths) and minimize the high-side drain trace length to reduce EMI loop area.
Do not exceed V GS=±20 V — the gate oxide is rated for absolute maximum ±20 V and overvoltage can permanently damage the device. Use a Zener clamp or dedicated gate-driver IC rather than relying on RC gate drives for high dv/dt applications. Avoid shorting the source tab and source pin to independent grounds, as this creates a parasitic source inductance that degrades switching performance. Finally, do not operate above the rated V DSS=600 V even momentarily — switching overshoots from leakage inductance can exceed 600 V during turn-off and cause avalanche breakdown; add a snubber or clamp circuit if needed.
For hard-switched flyback designs, place a small RCD snubber across the primary winding to clamp drain-voltage spikes below 600 V at the worst-case line input (265 VAC) and maximum load. The CoolMOS PFD7 family tolerates avalanche, but continuous operation in avalanche reduces long-term reliability. A 100-470 pF snubber capacitor in series with a 10-100 kΩ resistor across the transformer primary typically limits peak drain voltage to 80-85% of V DSS, leaving adequate margin.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Consumer-grade qualification only; for AEC-Q100 automotive applications consult Infineon automotive-grade PFD7 variants.
