IPD78CN10NGATMA1 - 100V 13A OptiMOS N-Ch MOSFET | Infineon
MPN: IPD78CN10NGATMA1 ✓ فعالIPD78CN10NGATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals under control of the gate-source voltage. Within the broader taxonomy, the IPD78CN10NGATMA1 sits in the OptiMOS 2 -> N-channel MOSFET -> discrete power transistor -> power semiconductor category. Compared to the next-best alternative technology on the market, the OptiMOS family achieves roughly 30% reduction in both RDS(on) and FOM (figure of merit = RDS(on) x Qg), making it well suited to high-frequency switching and synchronous rectification stages.
Key features include a 100 V drain-source breakdown voltage, 13 A continuous drain current at 25 C case temperature, 78 mOhm maximum RDS(on) at 10 V VGS, and 31 W maximum power dissipation. The device supports an operating junction temperature up to 175 C and is qualified per JEDEC standards. Pb-free lead plating and RoHS compliance make it suitable for global designs. The integrated gate-protection ESD profile and avalanche-rated single-pulse capability provide additional margin in inductive switching applications such as motor control and low-side switches.
Typical applications include synchronous rectification in 48 V telecom and server bus converters, primary-side switches in telecom bricks, motor drive low-side switches, hot-swap / e-fuse controllers, and DC-DC converter high-side switches in industrial automation. The wide 100 V rating provides ample headroom for 48 V nominal rails and telecom bus systems.
When designing with this part, ensure the gate driver delivers at least 10 V VGS to achieve the rated 78 mOhm RDS(on), and place the gate-source resistor close to the device to suppress parasitic ringing. The DPAK tab serves as the drain terminal and must be soldered to a copper pour sized for thermal dissipation up to 31 W.
This page synthesizes distributor pricing, same-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل IPD78CN10NGATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD78CN10NGATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, MSL Level, Package, RoHS Status, Drain-Source Voltage (VDS) Max.
IPD78CN10N G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD78CN10NGBUMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB79CN10N G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPI80CN10N G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPP80CN10N G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC098N10NS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD78CN10NGATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 2 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 13 A |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm |
| Power Dissipation (PD) Max at Tc=25C | 31 W |
| Operating Junction Temperature Max | 175 C |
| پیکیج / کیس | PG-TO252-3 (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | Pb-free (Matte Tin) |
| RoHS Compliance | Compliant |
| JEDEC Qualification | Qualified per JEDEC1 for target application |
| Technology | OptiMOS 2 Power-Transistor |
| MSL لیول | 1 (per JEDEC J-STD-020) |
IPD78CN10NGATMA1 پن کنفیگریشن
| پن 1 | Gate (G) — Gate control input - drive to 10V for full RDS(on) |
| پن 2 | Drain (D) — Drain terminal (internally bonded to rear tab) |
| پن 3 | Source (S) — Source terminal - power return path |
| پن Tab | Drain (D) — Rear metal tab is electrically bonded to pin 2 (Drain) and serves as the primary thermal pad |
محفوظ آپریٹنگ ایریا - IPD78CN10NGATMA1
عام استعمالات
IPD78CN10NGATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: 48V Telecom Synchronous Rectifier, Hot-Swap / E-Fuse Controller Switch, BLDC Motor Drive Low-Side Switch, Industrial 48V DC-DC Buck Converter, Server / Datacenter 48V Bus OR-ing, Automotive 12V/24V Load Switch, Power Over Ethernet (PoE) High-Side Switch.
48V Telecom Synchronous Rectifier
The IPD78CN10NGATMA1's 100 V VDS and 78 mOhm RDS(on) at 10 V VGS are well matched to 48 V nominal telecom bus synchronous-rectifier stages, where transient bus excursions to 60 V must be tolerated without breakdown. Placed on the secondary low-side of an isolated forward or half-bridge converter, the MOSFET's low Qg x RDS(on) figure of merit keeps switching loss under 1 W at 200 kHz / 5 A, while conduction loss at full load (78 mOhm x 5 A^2 = ~2 W) fits comfortably in the DPAK 31 W power budget with a 1 sq-inch copper pour. Compared with the previous-generation Infineon part, this OptiMOS 2 device delivers ~30% lower RDS(on) and FOM per the Infineon datasheet, increasing overall converter efficiency by 1-2 percentage points.
تجویز کردہ
Hot-Swap / E-Fuse Controller Switch
The IPD78CN10NGATMA1 functions as the main pass element in a 48 V hot-swap or electronic-fuse circuit, where its 100 V VDS provides 50% headroom above the nominal 48 V rail, and its 78 mOhm RDS(on) keeps full-load conduction loss under 1 W at 3.5 A continuous. The 13 A pulsed-current capability covers inrush transients during board insertion, and the 175 C maximum junction temperature allows sustained fault-current handling during breaker-trip events. Designers typically place a TVS clamp across drain-source for avalanche protection and add a gate-source resistor of 10-100 kOhm to keep the device off during controller power-up.
تجویز کردہ
BLDC Motor Drive Low-Side Switch
In a 24-48 V BLDC motor drive, the IPD78CN10NGATMA1 serves as the low-side switch of a three-phase half-bridge, switching PWM frequencies from 20-50 kHz at 5-10 A continuous phase current. Its 78 mOhm RDS(on) keeps conduction loss under 5 W per switch at full load (fits DPAK 31 W dissipation budget), while OptiMOS 2's fast body-diode reverse recovery supports synchronous rectification and reduces dead-time loss. The 100 V VDS rating allows the bus to ride through regenerative braking transients without avalanche breakdown. Companion gate drivers such as the IR2114 or 6ED003L02F2 handle level shifting and dead-time insertion.
تجویز کردہ
Industrial 48V DC-DC Buck Converter
The IPD78CN10NGATMA1 is suitable for the high-side or low-side switch of an industrial 48 V-to-low-voltage buck converter delivering 3.3 V, 5 V, or 12 V rails at 5-10 A. With a 100 V VDS rating, the part tolerates 48 V nominal plus transients up to 60 V, while the 78 mOhm RDS(on) delivers >95% efficiency at moderate loads. The DPAK package allows compact SMD manufacturing with standard reflow profiles. Designers pair the MOSFET with a peak-current-mode controller (such as Infineon XDPS2201 or TlE buck controllers) to leverage the OptiMOS 2 fast switching edge rates for high loop bandwidth and tight output regulation.
تجویز کردہ
Server / Datacenter 48V Bus OR-ing
In redundant 48 V server power architectures, the IPD78CN10NGATMA1 can be used as a discrete OR-ing FET to combine two independent 48 V feeds with low forward drop and fast disconnect during fault events. Its 78 mOhm RDS(on) at 10 V VGS limits forward voltage drop to 0.39 V at 5 A - significantly lower than Schottky diode drops, saving 1-2 W per feed. The 100 V VDS handles the maximum 60 V transients on 48 V distribution buses, and the fast body-diode enables hot-swap transition without catastrophic ring-up. Designers should add a gate-source Zener clamp to prevent VGS overstress during transient events.
تجویز کردہ
Automotive 12V/24V Load Switch
Although the IPD78CN10NGATMA1 is not AEC-Q100 qualified, it remains a popular choice for non-safety automotive loads (infotainment, interior lighting, USB-PD rails) operating from 12 V or 24 V nominal vehicle buses. The 100 V VDS comfortably tolerates load-dump transients up to 35 V on 12 V systems and 60 V on 24 V trucks. Its 78 mOhm RDS(on) and 13 A rating cover most 12 V accessory loads (5-8 A continuous), and the DPAK footprint simplifies PCB layout for high-volume automotive Tier-1 designs. For AEC-Q100 applications, consider Infineon's automotive-grade OptiMOS 2 alternatives with explicit Q-1 suffix.
تجویز کردہ
Power Over Ethernet (PoE) High-Side Switch
The IPD78CN10NGATMA1 functions as the high-side switch in PoE+ (30 W) and PoE++ Type 3 (60 W) powered-device (PD) controllers, switching the 48 V rail under IEEE 802.3at/bt control. Its 100 V VDS handles the 50-57 V PoE bus range, and the 78 mOhm RDS(on) keeps full-load conduction loss under 2 W at 5 A. The 13 A current rating supports PD classification up to Class 6 (60 W) with sufficient thermal derating margin. Designers should add TVS protection across drain-source to clamp inductive transients from cable disconnect events and select a controller with integrated current-sense and MOSFET driver.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD78CN10NGATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD78CN10N G | IPD78CN10NGBUMA1 | IPB79CN10N G | IPI80CN10N G | IPP80CN10N G | BSC098N10NS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) | PG-TO262-3 (I2PAK) | PG-TO220-3 | PG-TDSON-8 (SuperSO8) |
| Drain-Source Voltage VDS Max | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| RDS(on) Max at VGS=10V | 78 mOhm | 78 mOhm | 78 mOhm | 79 mOhm (+1.3%) | 80 mOhm (+2.6%) | 80 mOhm (+2.6%) | 9.8 mOhm (-87%) |
| Technology / Family | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 5 |
| RoHS / Pb-free | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Qty-1 Price (USD, approx) | 1.85 | 1.85 | 1.85 | 1.95 | 2.10 | 2.25 | 1.65 |
اہم امتیازی خصوصیات
- OptiMOS 2 technology with 30% lower RDS(on) and FOM versus previous generation (بمقابلہPrevious-generation Infineon 100V MOSFETs)
- Wide 100V VDS rating with 13A continuous drain current in compact DPAK (بمقابلہLower-voltage 60V/80V DPAK MOSFETs)
- Same OptiMOS 2 die scales across DPAK / D2PAK / I2PAK / TO-220 family (بمقابلہDiscrete 100V MOSFETs from other vendors)
ڈیزائن نوٹس
Estimated: at continuous 7 A drain current and 100 V VDS, the IPD78CN10NGATMA1 dissipates roughly I^2 x RDS = 49 x 0.078 = 3.8 W in the worst case (fully on), and much less in switching applications. The DPAK PG-TO252-3 package has a junction-to-ambient thermal resistance (theta_JA) of approximately 50 C/W on a 1 sq-inch 2-oz copper pour, so the junction temperature rise above ambient at 3.8 W is ~190 C - exceeding the 175 C maximum. Designers must either reduce continuous current to 5 A or expand copper area to 2 sq-inch with thermal vias for reliable operation.
Place the gate resistor (typically 10-100 Ohm) as close as possible to the gate pin (pin 1) to suppress parasitic turn-on from drain-gate Miller coupling. The DPAK tab serves as the drain terminal and must be soldered to a continuous copper pour with at least 4 thermal vias (0.3 mm drill, 1 mm pitch) to the opposite PCB layer for thermal dissipation. Keep the high-current drain loop (input cap -> drain tab -> source -> input cap ground) area as small as possible to minimize parasitic inductance and switching ringing.
Drive the gate to at least 10 V VGS to achieve the rated 78 mOhm RDS(on). Driving at 4.5 V (logic-level) typically results in 150-200 mOhm RDS(on) - almost 3x worse conduction loss. For high-frequency switching above 100 kHz, use a dedicated gate-driver IC (such as IRS2302 or 1EDN7511) rather than a logic-level GPIO; the gate driver's 1-2 A peak source/sink current ensures fast Miller plateau transitions and minimizes switching loss in the OptiMOS 2 die.
Do not exceed the 175 C maximum junction temperature - the part will thermally run away with no protection circuit. Add a TVS clamp (such as SMBJ5.0A or higher-voltage equivalent) across drain-source when switching inductive loads (relays, motors, transformers) to absorb avalanche energy. Do not operate the gate-source junction above +/-20 V VGS - static discharge or driver fault conditions can puncture the gate oxide. Always include a 10 kOhm gate-source pull-down resistor to keep the device off during controller power-up.
تعمیل کی معلومات
Pb-free lead plating per Infineon datasheet. RoHS compliant and JEDEC1 qualified per target-application standard. Not AEC-Q100 qualified - select automotive-grade Q-1 suffix variants for safety-critical automotive designs.
